Infineon Technologies IDH04G65C5XKSA1

Overview

IDH04G65C5XKSA1 from Infineon is a 650 V, 4 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 4 A and 25°C, 7 nC capacitive charge at 400 V, and rated for continuous operation up to 150°C junction temperature-used in high-efficiency PFC stages of industrial SMPS.

For engineers reviewing the IDH04G65C5XKSA1 datasheet, IDH04G65C5XKSA1 pinout, IDH04G65C5XKSA1 application, or IDH04G65C5XKSA1 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, thermal resistance (RthJC = 1.9–3.1 K/W), surge current capability (38 A @ 10 ms, TC = 25°C), and compatibility with 650 V CoolMOS™ power stages.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. It operates without minority-carrier storage, eliminating reverse recovery losses and associated EMI.

Designed specifically to complement 650 V CoolMOS™ MOSFETs, it supports hard-switched and high-frequency topologies (e.g., Totem-Pole PFC) where temperature-independent switching and stable capacitance vs. voltage (130 pF @ 1 V, 17 pF @ 300 V) are critical for predictable timing and loss modeling.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (2-pin, isolated tab), lead-free, RoHS-compliant, M3 mounting torque 70 Ncm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E and STP4S065, IDH04G65C5XKSA1 offers superior dv/dt ruggedness and tighter Qc/VF trade-off, making it optimal for high-reliability, high-frequency PFC where thermal stability and EMI control are prioritized over marginal BOM cost reduction.

Availability

IDH04G65C5XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDH04G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDH04G65C5XKSA1 belongs to the thinQ!™ 5th-generation SiC Schottky diode product line, engineered to deliver benchmark efficiency and reliability in high-power, high-temperature switching applications alongside CoolMOS™ power stages.

FAQ

Is IDH04G65C5XKSA1 pin-compatible with standard TO-220-2 Si diodes?

Yes, IDH04G65C5XKSA1 uses the industry-standard PG-TO220-2 footprint with 2.54 mm lead pitch and identical mounting hole pattern. Pin 1 is anode, Pin 2 is cathode, and the tab is electrically connected to Pin 1. Mechanical fit is guaranteed, but thermal and electrical performance differs significantly from silicon counterparts due to SiC material properties.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF = 4 A is rated for TC < 150°C. Operation above this temperature reduces allowable forward current per the derating curve in Figure 7 (IF vs. TC). At TC = 175°C, maximum continuous IF drops to approximately 2.2 A. Thermal design must ensure case temperature stays within this limit under worst-case ambient and airflow conditions.

Does IDH04G65C5XKSA1 require a gate resistor or snubber network?

No-IDH04G65C5XKSA1 is a passive diode with no gate terminal and exhibits zero reverse recovery. Snubbers are unnecessary in most applications due to absence of Qrr-induced voltage overshoot. However, a small RC snubber (e.g., 100 Ω + 100 pF) may still be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.

How does the 100 V/ns dv/dt rating impact layout in high-speed converters?

The 100 V/ns dv/dt ruggedness means the diode can withstand rapid voltage transients without false turn-on or avalanche breakdown. Layouts should minimize loop inductance between the diode and adjacent switching devices (e.g., CoolMOS™), especially in Totem-Pole PFC, to avoid exceeding this rating during hard commutation events. Keep high-di/dt traces short and tightly coupled.