Infineon Technologies IDW16G65C5FKSA1

Overview

IDW16G65C5FKSA1 from Infineon is a 650 V, 16 A silicon carbide Schottky diode in TO-247-3 package, designed as a high-efficiency unidirectional power rectifier for high-frequency switching applications. It delivers zero reverse recovery charge, 1.5–1.7 V forward voltage at 16 A/25°C, 23 nC capacitive charge at 400 V, and operates up to 175°C junction temperature in SMPS, PFC, solar inverters, and UPS systems.

For engineers reviewing the IDW16G65C5FKSA1 datasheet, IDW16G65C5FKSA1 pinout, IDW16G65C5FKSA1 application, or IDW16G65C5FKSA1 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, thermal resistance of 1.2–1.6 K/W (junction-to-case), surge current rating of 95 A (10 ms, 25°C), and RoHS-compliant Pb-free plating.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to reduce Qc × Vf figure-of-merit and improve thermal performance over prior generations. Its unipolar conduction mechanism eliminates minority-carrier storage, enabling operation with no reverse recovery loss and temperature-independent switching speed.

The device is rated for 650 V repetitive peak reverse voltage (VRRM), supports 100 V/ns dv/dt ruggedness, and maintains stable reverse leakage (<1400 µA at 650 V/150°C) - critical for high-reliability, high-temperature power conversion stages where Si diodes exhibit rapid degradation.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-terminal configuration).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D16065E and STPSC16065DLF, IDW16G65C5FKSA1 offers lower Qc (23 nC) and a dedicated n.c. pin for enhanced layout flexibility in gate-drive-isolated topologies - delivering superior EMI control and thermal margin in high-density PFC modules.

Availability

IDW16G65C5FKSA1 is available at Aetrix Electronics and suitable for switch mode power supplies, solar inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDW16G65C5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDW16G65C5FKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum junction temperature for continuous operation?

The IDW16G65C5FKSA1 supports continuous operation up to 175°C junction temperature, validated per JEDEC standards. Thermal derating begins at case temperatures above 120°C, where rated forward current reduces linearly to zero at 175°C. This enables deployment in sealed, fanless enclosures common in solar and UPS applications.

Does this diode require a gate resistor or driver circuit?

No - the IDW16G65C5FKSA1 is a passive two-terminal Schottky diode with no gate terminal. It conducts when anode voltage exceeds cathode voltage by ≥1.5 V and blocks when reverse biased. Unlike MOSFETs or IGBTs, it requires no external drive circuitry, simplifying layout and eliminating gate-loop EMI concerns.

How does its reverse leakage compare to silicon diodes at high temperature?

At 650 V and 150°C, IDW16G65C5FKSA1 exhibits 3.2–1400 µA reverse leakage - significantly lower than equivalent Si fast recovery diodes (>10 mA under same conditions). This stability arises from SiC's wide bandgap, enabling reliable blocking performance in high-ambient-temperature environments like rooftop solar inverters.

Can it replace a silicon diode without board redesign?

Yes - the TO-247-3 footprint and pinout (A/C/n.c.) match legacy silicon diode layouts. However, due to lower VF and zero Qrr, snubber networks and heatsink sizing may be reduced. Layout verification is recommended to ensure adequate creepage/clearance for 650 V operation and avoid parasitic oscillation in high-dv/dt nodes.