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Infineon Technologies IDW12G65C5FKSA1
- Part No.:
- IDW12G65C5FKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-3
- Datasheet:
-
IDW12G65C5FKSA1.pdf
- Description:
- DIODE SIL CARB 650V 12A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:9,222
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Product details
Overview
IDW12G65C5FKSA1 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in TO-247-3 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (12 A, 25–150°C), and 18 nC capacitive charge at 400 V. It operates up to 175°C junction temperature and delivers high surge current capability (71 A, 10 ms, TC = 25°C) for PFC and solar inverter front-end rectification.
For engineers reviewing the IDW12G65C5FKSA1 datasheet, IDW12G65C5FKSA1 pinout, IDW12G65C5FKSA1 application, or IDW12G65C5FKSA1 equivalent, key selection criteria include its SiC-specific thermal stability, absence of reverse recovery loss, low Qc × Vf figure of merit, and compatibility with 650 V CoolMOS™ half-bridges in high-frequency, high-efficiency power conversion stages.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to reduce on-state losses and improve thermal resistance (RthJC = 1.5–2.0 K/W). Its unipolar conduction eliminates minority-carrier storage, enabling operation at >100 kHz without recovery-related switching loss or EMI spikes.
The device is rated for 650 V repetitive peak reverse voltage (VRRM), withstands 100 V/ns dv/dt, and maintains stable reverse leakage (<1.35 mA at 650 V, 150°C) and forward voltage across –55°C to +175°C. Its 25.4 A²s i²t rating supports robust surge handling under short-duration line transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Ensures reliable blocking in 400 VAC PFC and 600 VDC solar bus applications |
| IF (TC < 125°C) | 12 A - Continuous conduction capability at industrial ambient temperatures without derating |
| VF @ 12 A, 25°C | 1.5–1.7 V - Low forward drop reduces conduction loss vs. Si fast recovery diodes |
| Qc @ VR=400 V | 18 nC - Minimal capacitive charge enables high-frequency switching with low turn-off loss |
| RthJC | 1.5–2.0 K/W - Enables direct heatsink mounting with predictable thermal path for thermal design |
| Tj max | 175°C - Supports operation in sealed enclosures or high-ambient environments without forced cooling |
| IR @ 650 V, 150°C | 2.4–1350 µA - Stable leakage ensures low standby loss and system-level reliability |
Pinout & Package
Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-pin vertical lead frame).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No connection (n.c.) | Electrically isolated terminal; no internal bond wire or die connection |
| Pin 2 | Cathode (C) | Main current exit path; connected to die cathode metallization and case tab |
| Pin 3 | Anode (A) | Main current entry path; bonded to SiC anode structure via aluminum wire |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Eliminates switching loss and associated EMI in hard-switched topologies |
| Temperature-independent switching behavior | Enables consistent timing and loss profile across full operating temperature range |
| High surge current capability (71 A, 10 ms) | Withstands inrush and overload events without degradation in PFC and UPS systems |
| Low Qc × Vf figure of merit | Improves efficiency over all load conditions compared to prior SiC generations |
| Pb-free, RoHS-compliant plating | Meets global environmental compliance requirements for industrial and renewable energy equipment |
Applications
| Solar Inverter DC Link | Server PSU PFC Stage |
|---|---|
Use Scenario: High-voltage DC bus rectification in string inverters with 1000 VDC input. IC Role / Device Role / Timing Role: Freewheeling and boost diode in interleaved two-phase PFC with 100 kHz switching. Use Value: Zero Qrr prevents shoot-through risk and reduces snubber size; 175°C rating allows compact heatsink design in outdoor-rated enclosures. | Use Scenario: Active clamp PFC rectifier in 3 kW telecom/server PSUs. IC Role / Device Role / Timing Role: Output rectifier in continuous conduction mode (CCM) boost stage. Use Value: 18 nC Qc enables >150 kHz operation while maintaining <1.7 V VF at full load, improving power density by 22% vs. Si diodes. |
| Industrial UPS Rectifier | EV Charger Front-End |
Use Scenario: Bidirectional AC/DC conversion in double-conversion UPS with battery backup. IC Role / Device Role / Timing Role: Input rectifier during grid-to-battery transfer and regenerative braking energy return. Use Value: 25.4 A²s i²t rating sustains 10 ms surges during grid fault transitions; low IR at 150°C ensures stable standby loss. | Use Scenario: Onboard charger front-end rectification in 11 kW AC Level 2 EVSE units. IC Role / Device Role / Timing Role: Boost diode in Vienna rectifier topology operating at 50–70 kHz. Use Value: Stable VF across temperature avoids current imbalance in parallel phases; TO-247-3 mechanical robustness supports high-vibration automotive environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | Same 650 V/10 A rating; 1.7 V VF @ 10 A, 25°C; 19 nC Qc; TO-247-2 package (no n.c. pin) | Lacks Pin 1 n.c.; requires PCB layout revision for gate drive isolation | Preferred where board space is constrained and thermal coupling to heatsink is optimized via 2-pin mounting |
| STPSC12065DLF (STMicroelectronics) | 650 V/12 A; 1.6 V VF @ 12 A, 25°C; 22 nC Qc; same TO-247-3 pinout but non-isolated tab | Non-isolated case requires insulating washer; higher Qc increases turn-off loss at >80 kHz | Selected when cost sensitivity outweighs marginal efficiency gain and isolation is handled externally |
Compared with C3D10065A and STPSC12065DLF, IDW12G65C5FKSA1 offers the lowest Qc × Vf product among 12 A SiC diodes in TO-247-3, with verified 175°C operation and integrated isolation-making it optimal for thermally demanding, high-reliability PFC and inverter designs.
Availability
IDW12G65C5FKSA1 is available at Aetrix Electronics and suitable for solar inverter DC link, server PSU PFC stage, and industrial UPS rectifier applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IDW12G65C5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDW12G65C5FKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC/DC and DC/DC converters.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 12 A only when TC < 125°C. At TC = 125°C, derating begins per the IF vs. TC curve; full 12 A is permitted up to TC = 125°C with RthJC ≤ 2.0 K/W and adequate heatsinking. Operation above this requires proportional current reduction to maintain Tj ≤ 175°C.
Does Pin 1 require electrical isolation on the PCB?
Yes. Pin 1 is explicitly marked "n.c." (no connection) and has no internal die connection. It must be left floating or tied to ground only if required for mechanical stability-never used as a signal or power node. Its presence provides layout symmetry and mechanical rigidity in TO-247-3 mounting.
How does the diode behave under avalanche stress?
All units are 100% tested under avalanche conditions for 10 ms at rated VRRM. The device is not rated for repetitive avalanche operation, but single-event ruggedness ensures survivability during transient overvoltage events such as lightning-induced surges or inductive kickback in PFC chokes.
Can IDW12G65C5FKSA1 replace a silicon fast recovery diode directly?
Yes, in most cases-but attention is required to gate drive layout. Unlike Si diodes, this SiC part has no reverse recovery, so snubbers can be removed or downsized. However, its faster dv/dt (100 V/ns) demands careful PCB routing to avoid false triggering of adjacent MOSFET gates; layout review and gate resistor optimization are recommended.
IDW12G65C5FKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 12 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 500 µA @ 650 V
- Capacitance @ Vr, F:
- 360pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-41
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDW12G65C5FKSA1 FAQ
1.How can I place an order for IDW12G65C5FKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDW12G65C5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDW12G65C5FKSA1 reliable?
The price and inventory of IDW12G65C5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW12G65C5FKSA1 is usually 5 days.
3.What payment methods are accepted for IDW12G65C5FKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW12G65C5FKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDW12G65C5FKSA1?
IDW12G65C5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDW12G65C5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDW12G65C5FKSA1?
For technical support, including IDW12G65C5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW12G65C5FKSA1 requirements.
6.How does Aetrix verify that IDW12G65C5FKSA1 is sourced from the original manufacturer or authorized distributors?
All IDW12G65C5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW12G65C5FKSA1 meets industry standards.
7.What is the process for return or replacement of IDW12G65C5FKSA1?
All IDW12G65C5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW12G65C5FKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDW12G65C5FKSA1 part is unused and in its original packaging.
Return procedure for IDW12G65C5FKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDW12G65C5FKSA1 Tags
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