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Infineon Technologies IDH16G65C5XKSA1
- Part No.:
- IDH16G65C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH16G65C5XKSA1.pdf
- Description:
- DIODE SIL CARB 650V 16A TO220-2
- Quantity:
- Payment:
- Shipping:
Inventory:8,688
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Product details
Overview
IDH16G65C5XKSA1 from Infineon Technologies is a 650 V, 16 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 16 A and 25°C, 23 nC capacitive charge at 400 V, and rated for continuous operation up to 135°C case temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switch-mode power supplies and solar inverters.
For engineers reviewing the IDH16G65C5XKSA1 datasheet, IDH16G65C5XKSA1 pinout, IDH16G65C5XKSA1 application, or IDH16G65C5XKSA1 equivalent, key selection criteria include its 650 V repetitive peak reverse voltage, 124 A surge current capability at 25°C, 0.7 K/W typical junction-to-case thermal resistance, and RoHS-compliant Pb-free lead plating.
Technical Context
This SiC Schottky diode leverages Infineon's 5th Generation thinQ!™ technology with diffusion-soldered die attach and thin-wafer design, enabling lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, resulting in temperature-independent switching behavior and no reverse recovery losses.
The device is optimized for co-packaging with 650 V CoolMOS™ MOSFETs, supporting high-power-density topologies such as interleaved PFC and two-level solar inverters. Its dv/dt ruggedness of 100 V/ns and avalanche-tested construction ensure robustness under fast-switching transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse blocking voltage; enables use in 400 V AC input PFC and 600 V DC bus solar inverters. |
| IF (TC < 135°C) | 16 A - Continuous forward current rating at case temperature ≤135°C; defines maximum steady-state conduction capability. |
| VF @ 16 A, 25°C | 1.5–1.7 V - Forward voltage drop; directly determines conduction loss and thermal load in high-current paths. |
| Qc @ VR=400 V | 23 nC - Total capacitive charge; governs turn-on switching loss when commutated by a MOSFET or IGBT. |
| RthJC (typ) | 0.7 K/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation using heatsink-mounted case temp. |
| IR @ 650 V, 150°C | 3.2–1400 µA - Reverse leakage current range; impacts standby loss and thermal runaway risk in series-connected strings. |
| dv/dt ruggedness | 100 V/ns - Maximum sustainable voltage transient rate; ensures reliable operation during fast MOSFET switching edges. |
Pinout & Package
Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Cathode) | High-side return node | Connected to positive rail or switching node; carries full load current and must be routed with low-inductance layout. |
| Pin 2 (Anode) | Low-side conduction path | Connected to ground or negative rail; forms freewheeling path during MOSFET off-time in buck or flyback topologies. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery charge | Eliminates switching loss and EMI associated with Si diode tail current; enables >200 kHz operation without snubbers. |
| Temperature-independent switching | Qc and VF drift <±5% from −55°C to 150°C; simplifies thermal design across wide ambient ranges. |
| High surge current rating | 124 A non-repetitive sine half-wave surge (10 ms) at 25°C; supports inrush and fault-current handling in UPS and PFC stages. |
| Optimized thermal interface | Diffusion-soldered die attach reduces interfacial thermal resistance by ~30% vs. standard solder, improving long-term reliability. |
Applications
| Switch Mode Power Supply | Power Factor Correction |
|---|---|
Use Scenario: Output rectification in 1–3 kW telecom and server PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectification or boost converter output stage. Use Value: Reduces conduction + switching losses by 35% vs. Si FRD, lowering heatsink size and enabling 96%+ efficiency at full load. | Use Scenario: Boost diode in active front-end PFC circuits for industrial motor drives. IC Role / Device Role / Timing Role: High-voltage output rectifier handling 400–450 V DC bus with 50 kHz switching. Use Value: Enables 99% PFC efficiency at 230 V AC input due to near-zero recovery loss and stable VF over temperature. |
| Solar Inverter | Uninterruptible Power Supply |
Use Scenario: DC-link clamping and freewheeling in string inverters with 600–1000 V DC input. IC Role / Device Role / Timing Role: Anti-parallel diode for 650 V SiC MOSFETs in H-bridge and NPC topologies. Use Value: Supports 20 kHz carrier frequency with <1.5 W switching loss per device, reducing filter size and acoustic noise. | Use Scenario: Battery charging and inverter output rectification in online double-conversion UPS systems. IC Role / Device Role / Timing Role: Bidirectional conduction path in IGBT-based inverter output stage during regeneration. Use Value: Withstands 105 A surge at 150°C, ensuring reliable operation during battery short-circuit events and grid faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D16065E (Wolfspeed) | Same 650 V/16 A rating; 1.75 V VF @ 16 A, 25°C; 25 nC Qc; TO-247-2L package. | Higher thermal resistance (RthJC = 0.9 K/W); requires larger heatsink footprint than TO-220-2. | Preferred where higher surge margin (140 A) and industry-standard TO-247 mounting are required. |
| STPSC15H065D (STMicroelectronics) | 15 A rating; 1.6 V VF @ 15 A, 25°C; 21 nC Qc; same TO-220-2 package; 175°C max Tj. | Lower IF rating limits usable power density; tighter IR spec (≤1 µA @ 650 V, 25°C). | Selected when tighter leakage control is critical in high-string-count PV arrays. |
Compared with C3D16065E and STPSC15H065D, IDH16G65C5XKSA1 offers the lowest RthJC (0.7 K/W) and best Qc × Vf trade-off in TO-220-2, making it optimal for space-constrained, thermally demanding PFC and inverter designs.
Availability
IDH16G65C5XKSA1 is available at Aetrix Electronics and suitable for switch-mode power supply, power factor correction, and solar inverter applications requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for IDH16G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
IDH16G65C5XKSA1 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ devices in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.
FAQ
Is IDH16G65C5XKSA1 RoHS compliant and halogen-free?
Yes. IDH16G65C5XKSA1 uses Pb-free lead plating and meets RoHS Directive 2011/65/EU requirements. The device is also qualified as halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm each.
What is the maximum allowable junction temperature and how is it enforced?
The absolute maximum junction temperature is 175°C. This limit is enforced via thermal design using the specified RthJC (0.7 K/W typ) and RthJA (62 K/W for leaded mounting), with derating applied above TC = 135°C per the IF vs. TC curve in the datasheet.
Can IDH16G65C5XKSA1 replace silicon diodes in existing designs without layout changes?
Yes - its TO-220-2 footprint matches legacy Si FRDs and standard heatsink mounting. However, reduced switching loss may require re-optimization of gate drive strength and snubber networks to avoid voltage overshoot from faster di/dt.
Does this diode require a negative gate drive or special biasing like SiC MOSFETs?
No. As a Schottky diode, IDH16G65C5XKSA1 has no gate terminal and operates passively. It requires only proper thermal management and layout attention to minimize parasitic inductance in high-di/dt paths.
IDH16G65C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 16A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 16 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 550 µA @ 650 V
- Capacitance @ Vr, F:
- 470pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH16G65C5XKSA1 FAQ
1.How can I place an order for IDH16G65C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH16G65C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH16G65C5XKSA1 reliable?
The price and inventory of IDH16G65C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH16G65C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDH16G65C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH16G65C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH16G65C5XKSA1?
IDH16G65C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH16G65C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH16G65C5XKSA1?
For technical support, including IDH16G65C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH16G65C5XKSA1 requirements.
6.How does Aetrix verify that IDH16G65C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH16G65C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH16G65C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDH16G65C5XKSA1?
All IDH16G65C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH16G65C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH16G65C5XKSA1 part is unused and in its original packaging.
Return procedure for IDH16G65C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDH16G65C5XKSA1 Tags
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