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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDW30E60AFKSA1DIODE GEN PURP 600V 60A TO247-3 Infineon Technologies |
7,578 | 0.00 |
|
Datasheet |
- | TO-247-3 | Tube | Discontinued at Digi-Key | Standard | 600 V | 60A | 2 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 143 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
|
IDC51D120T6MX1SA3DIODE GP 1.2KV 100A WAFER Infineon Technologies |
7,346 | 0.00 |
|
Datasheet |
- | Die | Bulk | Active | Standard | 1200 V | 100A | 2.05 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 18 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC06D120H8X1SA2DIODE GP 1.2KV 7.5A WAFER Infineon Technologies |
3,294 | 0.00 |
|
Datasheet |
- | Die | Bulk | Active | Standard | 1200 V | 7.5A | 1.97 V @ 7.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | Surface Mount | Sawn on foil | -40°C ~ 175°C |
|
|
SIDC08D120H8X1SA1DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
8,432 | 0.00 |
|
Datasheet |
- | - | Bulk | Active | Standard | 1200 V | 150A | 1.41 V @ 45 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
|
|
SIDC81D120H8X1SA3DIODE GEN PURP 1.2KV 150A WAFER Infineon Technologies |
6,278 | 0.00 |
|
Datasheet |
- | - | Bulk | Active | Standard | 1200 V | 150A | 2.15 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | - | - | - | - | -40°C ~ 175°C |
|
|
IRD3CH101DB6DIODE GEN PURP 1.2KV 200A DIE Infineon Technologies |
4,094 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 200A | 2.7 V @ 200 A | Fast Recovery =< 500ns, > 200mA (Io) | 360 ns | 100 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 175°C |
|
|
IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,637 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,905 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH24DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
6,613 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH31DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
7,352 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
