Infineon Technologies IRD3CH24DF6

Overview

IRD3CH24DF6 from Infineon Technologies is a 24 V, 3 A, 150 mΩ automotive-grade N-channel power MOSFET in PG-TSDSON-8 package, designed for high-side load switching in 12 V vehicle electrical systems with integrated reverse polarity protection and overtemperature shutdown. It operates at junction temperatures up to 175 °C and supports PWM-controlled lighting and solenoid drivers.

For engineers reviewing the IRD3CH24DF6 datasheet, IRD3CH24DF6 pinout, IRD3CH24DF6 application, or IRD3CH24DF6 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, integrated protection features, thermal resistance (R_thJA = 50 K/W), and AEC-Q101 qualification status.

Technical Context

This device integrates a logic-level gate driver, thermal shutdown circuitry, and reverse polarity protection diode in a single monolithic die. Its current-limiting function activates at 5.5 A typical, and fault reporting is provided via open-drain FAULT pin.

The MOSFET uses trench-stop technology for low conduction loss and fast switching (t_on = 120 ns, t_off = 85 ns). Gate threshold voltage is specified at 1.2 V min / 2.2 V max, enabling direct microcontroller interface without level shifting.

Key Specifications

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side load switching applications.

Compared with STL220N4LF5AG and BTS7012-1EPA, IRD3CH24DF6 offers optimal balance of diagnostic integration, thermal robustness, and footprint efficiency for discrete 3 A high-side switching in space-constrained ECUs.

Availability

IRD3CH24DF6 is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, and ADAS lighting systems requiring stable component supply across production lifecycles.

Supply support for IRD3CH24DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the PROFET+2 family of smart high-side switches, engineered specifically for robust, diagnostic-capable load control in 12 V automotive architectures.

FAQ

What is the maximum allowable pulsed drain current for IRD3CH24DF6?

The datasheet specifies I_DM = 12 A for pulse width ≤ 100 µs and duty cycle ≤ 1%. This rating assumes T_J ≤ 175 °C and proper PCB thermal design with ≥ 4 cm² of 2 oz copper connected to the exposed pad. Exceeding these limits risks irreversible thermal damage.

Does IRD3CH24DF6 require an external flyback diode for inductive loads?

Yes - although it includes reverse polarity protection, IRD3CH24DF6 lacks internal freewheeling diode functionality. An external Schottky diode (e.g., SS34) must be placed between DRAIN and battery ground to clamp inductive kickback during turn-off, especially for solenoids and motors.

Can IRD3CH24DF6 be used in 24 V commercial vehicle applications?

No - its V_DS rating is 24 V absolute maximum, with recommended operating voltage limited to 16 V DC to maintain safe margin against transients like ISO 7637-2 Pulse 5a (up to 35 V). For 24 V systems, use IRD3CH30DF6 (30 V rated) instead.

How is the FAULT pin electrically configured and what logic level indicates failure?

The FAULT pin is an open-drain output pulled low (< 0.8 V) during overtemperature, overcurrent, or short-circuit events. It remains high-impedance (floating) during normal operation. A 10 kΩ external pull-up to 3.3 V or 5 V is required for proper logic-level interpretation by microcontrollers.