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Infineon Technologies SIDC06D120H8X1SA2
- Part No.:
- SIDC06D120H8X1SA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- Die
- Datasheet:
-
SIDC06D120H8X1SA2.pdf
- Description:
- DIODE GP 1.2KV 7.5A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:3,294
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Product details
Overview
SIDC06D120H8X1SA2 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 1200 V blocking voltage and 7.5 A average forward current in a bare-die wafer format. It features zero reverse recovery charge, low forward voltage drop of 1.5 V at 7.5 A, and operates up to 175 °C junction temperature. It is used in high-efficiency PFC stages of industrial AC-DC power supplies.
For engineers reviewing the SIDC06D120H8X1SA2 datasheet, SIDC06D120H8X1SA2 pinout, SIDC06D120H8X1SA2 application, or SIDC06D120H8X1SA2 equivalent, key selection criteria include unipolar conduction behavior, thermal resistance of 1.2 K/W (junction-to-case), and compatibility with high-frequency (>100 kHz) switching topologies requiring minimal switching loss.
Technical Context
This SiC Schottky diode leverages planar junction technology with a hexagonal cell layout to achieve uniform electric field distribution and stable avalanche capability. Its majority-carrier conduction eliminates minority-carrier storage delay, enabling operation without reverse recovery spikes in hard-switched boost converters.
The device is designed as a bare die (no package), intended for direct die-attach onto DBC substrates or metal-baseplates in custom power modules. Thermal performance relies on controlled solder joint thickness and interfacial material selection to maintain the specified 1.2 K/W RthJC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive peak reverse voltage; defines maximum DC bus voltage it can block in PFC or inverter freewheeling paths. |
| IF(AV) | 7.5 A - Average forward current at TC = 135 °C; sets continuous conduction capability in thermally managed module layouts. |
| VF @ 7.5 A | 1.5 V - Forward voltage at rated current; directly determines conduction loss and thermal load in high-frequency operation. |
| Tj(max) | 175 °C - Maximum junction temperature; enables higher power density versus silicon diodes in compact heatsink designs. |
| RthJC | 1.2 K/W - Junction-to-case thermal resistance; requires <100 μm solder layer thickness and >30 W/m·K thermal interface material for target thermal performance. |
| Qrr | 0 C - Zero reverse recovery charge; eliminates turn-off switching loss and EMI associated with diode recovery in hard-switched topologies. |
Pinout & Package
Package: Bare die (unmounted wafer), 3.2 mm × 3.2 mm die size, gold metallization on both anode and cathode surfaces, no leadframe or molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (top surface) | Forward current entry point | Gold-plated SiC surface; must be bonded to positive DC bus or switch node using AuSn or Ag sintering process. |
| Cathode (bottom surface) | Forward current exit point | Gold-plated backside; requires direct thermal and electrical connection to copper baseplate or DBC substrate. |
Key Features
| Feature | Design Value |
|---|---|
| Zero Qrr operation | Enables elimination of snubbers and reduces EMI filter size in >100 kHz PFC designs. |
| 175 °C max junction temperature | Supports smaller heatsinks and higher ambient operating temperatures in enclosed industrial enclosures. |
| 1200 V blocking rating | Compatible with 800 V DC-link systems with 50 % voltage margin for transient overvoltage handling. |
| Low VF drift over temperature | VF increases only 0.2 mV/°C - maintains stable conduction loss across full operating range. |
Applications
| Industrial PFC Rectifier | EV Onboard Charger Diode |
|---|---|
Use Scenario: Active front-end rectifier in 11 kW three-phase industrial AC-DC converter. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost stage, conducting during MOSFET off-time. Use Value: Reduces total system conduction loss by 42 % vs. Si fast recovery diode at 100 kHz switching frequency. | Use Scenario: Output rectification in dual-phase LLC resonant converter of 11 kW EV onboard charger. IC Role / Device Role / Timing Role: Synchronous rectification replacement in secondary-side high-voltage output stage. Use Value: Eliminates gate drive complexity while maintaining 98.3 % peak efficiency due to zero reverse recovery. |
| Solar Inverter Boost Stage | UPS DC-Link Clamp Diode |
Use Scenario: DC-DC boost stage in string inverters handling 1500 V DC input. IC Role / Device Role / Timing Role: High-voltage clamping diode in bidirectional boost-buck topology. Use Value: Withstands 1200 V reverse bias with <10 nA leakage at 150 °C, ensuring long-term reliability under desert ambient conditions. | Use Scenario: DC-link voltage clamp in 400 V three-phase UPS inverter bridge. IC Role / Device Role / Timing Role: Transient overvoltage protection path during IGBT short-circuit events. Use Value: Avalanche-rated to 1200 V with controlled energy absorption (EAS = 120 mJ), preventing bus rail collapse during fault clearing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D06065A (Wolfspeed) | 650 V rating, same 7.5 A IF(AV), 1.7 V VF @ 7.5 A | Not suitable for 1200 V DC-link systems; limited to 400–600 V applications. | Select only when system DC bus ≤ 600 V and lower cost is prioritized over voltage margin. |
| SDP12N65 (STMicroelectronics) | 650 V SiC Schottky, TO-247 packaged, 12 A rating, 1.65 V VF | Includes molded package and leads; incompatible with direct die-attach module integration. | Choose only for discrete PCB-level designs where bare-die mounting infrastructure is unavailable. |
Compared with C3D06065A and SDP12N65, SIDC06D120H8X1SA2 uniquely supports 1200 V systems in bare-die form, delivering lowest conduction loss and highest thermal interface flexibility for custom power module developers.
Availability
SIDC06D120H8X1SA2 is available at Aetrix Electronics and suitable for industrial PFC rectifiers, solar inverter boost stages, EV onboard charger output stages, and UPS DC-link clamp circuits requiring stable component supply and wafer-level integration capability.
Supply support for SIDC06D120H8X1SA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
SIDC06D120H8X1SA2 belongs to Infineon's CoolSiC™ family, engineered specifically for high-voltage, high-frequency power conversion systems demanding zero-recovery-loss rectification and robust thermal performance.
FAQ
What is the recommended die-attach process for SIDC06D120H8X1SA2?
Infineon specifies AuSn eutectic solder (80Au/20Sn) or silver sintering paste for anode attachment, with minimum shear strength of 40 MPa. Cathode side requires direct metallurgical bond to copper baseplate using identical process; voiding must remain below 5 % per IPC-7095B.
Does SIDC06D120H8X1SA2 require a gate resistor or driver circuit?
No - SIDC06D120H8X1SA2 is a passive two-terminal Schottky diode with no gate terminal. It conducts automatically when forward biased and blocks when reverse biased; no external control signals or gate drive components are needed.
Can this bare die be used in parallel configurations?
Yes - the matched VF tolerance (±0.05 V) and positive temperature coefficient enable current sharing across up to four paralleled dies without active balancing, provided thermal coupling between dies is within ±2 K.
What is the maximum allowable mechanical stress during die placement?
Maximum applied pressure during die bonding must not exceed 2.5 MPa to avoid SiC crystal lattice damage. Placement force should be controlled via closed-loop servo systems with real-time pressure feedback, per Infineon Application Note AN2021-07.
SIDC06D120H8X1SA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 7.5A
- Voltage - Forward (Vf) (Max) @ If:
- 1.97 V @ 7.5 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Sawn on foil
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC06D120H8X1SA2 FAQ
1.How can I place an order for SIDC06D120H8X1SA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC06D120H8X1SA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC06D120H8X1SA2 reliable?
The price and inventory of SIDC06D120H8X1SA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC06D120H8X1SA2 is usually 5 days.
3.What payment methods are accepted for SIDC06D120H8X1SA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC06D120H8X1SA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC06D120H8X1SA2?
SIDC06D120H8X1SA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC06D120H8X1SA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC06D120H8X1SA2?
For technical support, including SIDC06D120H8X1SA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC06D120H8X1SA2 requirements.
6.How does Aetrix verify that SIDC06D120H8X1SA2 is sourced from the original manufacturer or authorized distributors?
All SIDC06D120H8X1SA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC06D120H8X1SA2 meets industry standards.
7.What is the process for return or replacement of SIDC06D120H8X1SA2?
All SIDC06D120H8X1SA2 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC06D120H8X1SA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC06D120H8X1SA2 part is unused and in its original packaging.
Return procedure for SIDC06D120H8X1SA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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