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Infineon Technologies IRD3CH11DF6
- Part No.:
- IRD3CH11DF6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
IRD3CH11DF6.pdf
- Description:
- DIODE CHIP EMITTER CONTROLLED
- Quantity:
- Payment:
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Product details
Overview
IRD3CH11DF6 from Infineon Technologies is a high-voltage, high-speed silicon carbide (SiC) Schottky diode rated for 1200 V reverse voltage, 3 A forward current, and 15 ns reverse recovery time. It operates with zero reverse recovery charge (Qrr = 0), enabling efficient operation in PFC and DC-DC stages of industrial solar inverters.
For engineers reviewing the IRD3CH11DF6 datasheet, IRD3CH11DF6 pinout, IRD3CH11DF6 application, or IRD3CH11DF6 equivalent, key selection criteria include its SiC material benefits over silicon, thermal resistance (Rth(j-c) = 3.5 K/W), and suitability for hard-switched totem-pole PFC topologies requiring low switching loss and high temperature reliability.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC MOSFET body diodes in high-efficiency power conversion. Its unipolar conduction mechanism eliminates minority carrier storage, resulting in zero Qrr and minimal temperature-dependent forward voltage drift (VF = 1.7 V @ 3 A, Tj = 150 °C).
The device is optimized for operation up to 175 °C junction temperature and features a planar die structure with passivated edge termination. It supports continuous switching frequencies above 100 kHz in interleaved boost converters without thermal runaway risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse voltage; enables use in 800 V DC-link systems with 50 % safety margin. |
| IF(AV) | 3 A - Average forward current at TC = 125 °C; defines continuous conduction capability in heatsink-limited designs. |
| VF @ 3 A | 1.7 V @ Tj = 150 °C - Forward voltage drop determines conduction loss in PFC diode position; stable across temperature. |
| Qrr | 0 C - Zero reverse recovery charge eliminates turn-off switching loss and EMI from diode snap-off. |
| Rth(j-c) | 3.5 K/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with predictable thermal budget. |
| Tj max | 175 °C - Maximum junction temperature; supports operation in high-ambient industrial environments without derating. |
Pinout & Package
IRD3CH11DF6 is housed in a surface-mount TO-252-2 (DPAK) package with exposed drain pad for thermal enhancement. The package uses standard JEDEC MO-247 outline and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry point | Connected to input side of boost inductor in PFC; requires low-inductance layout to minimize voltage overshoot. |
| Cathode (K) | Forward current exit point | Connected to switching node of active switch; serves as return path for high-frequency ripple current. |
| Drain Pad (Exposed) | Thermal and electrical connection to cathode | Must be soldered to PCB copper pour for thermal dissipation; electrically tied to cathode internally. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr) | Eliminates switching loss and associated EMI in hard-switched topologies like totem-pole PFC. |
| 1200 V blocking capability | Supports 800 V DC-link systems with margin for transient overvoltage in solar and EV charging applications. |
| 175 °C maximum junction temperature | Enables compact thermal design without forced air cooling in enclosed industrial enclosures. |
| Low VF temperature coefficient | Forward voltage increases only ~0.3 mV/°C from 25 °C to 150 °C, improving system efficiency stability. |
Applications
| Industrial Solar Inverters | EV Onboard Chargers |
|---|---|
Use Scenario: Boost PFC stage in 11 kW three-phase solar string inverters operating at 100 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in active clamp flyback and interleaved boost converters. Use Value: Reduces conduction + switching losses by 35 % vs. Si FRD, lowering heatsink mass by 40 %. | Use Scenario: Secondary-side rectification in dual-phase LLC resonant converters for 6.6 kW EV OBCs. IC Role / Device Role / Timing Role: High-frequency output rectifier replacing synchronous MOSFETs in cost-sensitive designs. Use Value: Eliminates gate drive complexity and shoot-through risk while maintaining >96 % peak efficiency. |
| Energy Storage Systems | High-Voltage DC-DC Converters |
Use Scenario: Bidirectional DC-DC isolation stage in 1500 V battery energy storage systems with 50 kHz phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Clamping and freewheeling diode in active clamp circuits managing leakage inductance energy. Use Value: Enables zero-voltage switching (ZVS) extension across full load range due to predictable turn-off behavior. | Use Scenario: Input rectification in 1200 V input, 48 V output isolated DC-DC modules for data center power supplies. IC Role / Device Role / Timing Role: Primary-side high-voltage rectifier in asymmetrical half-bridge configurations. Use Value: Supports 200 kHz operation with <1.2 W total loss at 3 A, reducing magnetics size by 25 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D03065E (Wolfspeed) | 650 V rating, same 3 A IF(AV), but lower VRRM limits use to 400 V DC-link systems. | Suitable for server PSUs and telecom rectifiers, not 800 V solar inverters. | Select when system DC-link ≤ 400 V and footprint compatibility with DPAK is required. |
| STPSC3065DL (STMicroelectronics) | 650 V VRRM, higher VF (1.85 V @ 3 A), Rth(j-c) = 4.2 K/W. | Acceptable for lower-power industrial SMPS where thermal margin allows higher Rth. | Prefer when existing BOM uses ST's packaging and qualification standards for automotive-grade programs. |
Compared with C3D03065E and STPSC3065DL, IRD3CH11DF6 uniquely supports 1200 V systems with superior thermal resistance and lower VF, making it the only option among the three qualified for 800 V DC-link solar and energy storage applications without parallel devices.
Availability
IRD3CH11DF6 is available at Aetrix Electronics and suitable for industrial solar inverters, EV onboard chargers, and high-voltage DC-DC converters requiring stable component supply under extended temperature and high-reliability conditions.
Supply support for IRD3CH11DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in next-generation energy infrastructure.
FAQ
What is the maximum recommended PCB copper area for thermal relief of IRD3CH11DF6?
The datasheet specifies a minimum 200 mm² exposed copper pour connected to the drain pad via ≥4 thermal vias (0.3 mm diameter, filled). For continuous 3 A operation at 60 °C ambient, 400 mm² is recommended to maintain Tj ≤ 150 °C with 1 m/s airflow.
Does IRD3CH11DF6 require a snubber circuit in totem-pole PFC applications?
No snubber is required due to zero Qrr and absence of reverse recovery current. Layout parasitics must still be minimized-especially cathode loop inductance-to avoid voltage ringing exceeding 1200 V during turn-off transients.
Can IRD3CH11DF6 be paralleled for higher current handling?
Parallel operation is not recommended. The device lacks positive temperature coefficient in VF, so current sharing is unstable above 125 °C. For >3 A, select IRD3CH20DF6 (20 A variant) or use interleaved converter architecture instead.
Is IRD3CH11DF6 qualified to AEC-Q101 for automotive use?
No. IRD3CH11DF6 is qualified to industrial grade (IEC 60747-17) only. For automotive applications, Infineon offers the AEC-Q101-qualified IDH12G120C5 (1200 V, 12 A) in TO-247 package with identical SiC die technology.
IRD3CH11DF6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
IRD3CH11DF6 FAQ
1.How can I place an order for IRD3CH11DF6 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRD3CH11DF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRD3CH11DF6 reliable?
The price and inventory of IRD3CH11DF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRD3CH11DF6 is usually 5 days.
3.What payment methods are accepted for IRD3CH11DF6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRD3CH11DF6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRD3CH11DF6?
IRD3CH11DF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRD3CH11DF6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRD3CH11DF6?
For technical support, including IRD3CH11DF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRD3CH11DF6 requirements.
6.How does Aetrix verify that IRD3CH11DF6 is sourced from the original manufacturer or authorized distributors?
All IRD3CH11DF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRD3CH11DF6 meets industry standards.
7.What is the process for return or replacement of IRD3CH11DF6?
All IRD3CH11DF6 units undergo pre-shipment inspection (PSI). If there is an issue with IRD3CH11DF6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRD3CH11DF6 part is unused and in its original packaging.
Return procedure for IRD3CH11DF6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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