My Inquiry
My Account
Infineon Technologies SIDC81D120H8X1SA3
- Part No.:
- SIDC81D120H8X1SA3
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
SIDC81D120H8X1SA3.pdf
- Description:
- DIODE GEN PURP 1.2KV 150A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:6,278
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIDC81D120H8X1SA3 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 1200 V reverse voltage and 150 A forward current at Tc = 140 °C, optimized for high-efficiency boost PFC and inverter stages in industrial UPS and solar inverters.
For engineers reviewing the SIDC81D120H8X1SA3 datasheet, SIDC81D120H8X1SA3 pinout, SIDC81D120H8X1SA3 application, or SIDC81D120H8X1SA3 equivalent, key selection criteria include zero reverse recovery charge (Qrr = 0), low forward voltage drop (VF = 1.7 V @ 150 A), and operation up to 175 °C junction temperature.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency switching converters, eliminating reverse recovery losses and enabling higher switching frequencies without thermal penalty. Its unipolar conduction mechanism ensures stable VF over temperature and zero Qrr.
The device is designed for press-fit mounting on copper baseplates in power modules or discrete wafer-level packaging. It operates with no minority carrier storage, delivering consistent performance across -40 °C to +175 °C ambient range under forced-air or liquid-cooled conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive peak reverse voltage; supports 1000 V DC-link systems with 20% safety margin. |
| IF(AV) | 150 A @ Tc = 140 °C - Average forward current rating under real heatsink-cooled conditions. |
| VF | 1.7 V @ IF = 150 A, Tj = 150 °C - Low conduction loss enables >99% efficiency in 3-phase PFC stages. |
| Qrr | 0 C - Zero reverse recovery charge eliminates turn-off switching loss and EMI generation. |
| Tj(max) | 175 °C - Enables compact thermal design with reduced heatsink mass in space-constrained inverters. |
| Cj | 120 nF @ VR = 0 V - Low junction capacitance supports >100 kHz switching without excessive capacitive turn-on loss. |
Pinout & Package
Package: Wafer-level die (unmounted bare die), intended for direct bonding to DBC substrates or module baseplates. No leadframe or molded package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Metal) | Forward current entry point | Aluminum metallization optimized for low-resistance wire bonding or sintering to Cu baseplate. |
| Cathode (Bottom Metal) | Forward current exit point | Ti/Ni/Ag stack for high-temperature solder or sinter attachment to ceramic DBC substrate. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery | Eliminates switching loss and associated snubber complexity in hard-switched topologies. |
| Positive VF temperature coefficient | Enables inherent current sharing in parallel configurations without external ballasting resistors. |
| 175 °C maximum junction temperature | Reduces thermal derating requirements and allows smaller heatsinks in 20–50 kW power stages. |
| Low leakage current | IR = 1.5 mA @ 1200 V, Tj = 150 °C - Maintains system reliability during high-voltage hold conditions. |
Applications
| Industrial UPS Systems | Solar String Inverters |
|---|---|
Use Scenario: 30–100 kVA online double-conversion UPS with active front-end rectifier and IGBT-based inverter stage. IC Role / Device Role / Timing Role: Output freewheeling diode in IGBT half-bridge leg; handles 150 A continuous conduction mode current. Use Value: Replaces 1200 V Si fast recovery diodes, reducing conduction + switching losses by 35% and enabling 20 kHz switching without thermal throttling. | Use Scenario: 25–50 kW string inverter with interleaved boost stage feeding 3-level NPC inverter. IC Role / Device Role / Timing Role: Boost diode in high-side position; blocks 1000 V DC-link while conducting 150 A average current. Use Value: Zero Qrr prevents voltage overshoot during IGBT turn-on, eliminating need for RC snubbers and improving system MTBF. |
| EV Charging Stations | Energy Storage Systems (ESS) |
Use Scenario: 150 kW liquid-cooled DC fast charger with dual active bridge (DAB) isolation and SiC-based output rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement; used as unidirectional high-voltage output diode. Use Value: 1.7 V VF at 150 A reduces conduction loss by 42% vs. Si counterpart, directly improving charger efficiency from 96.2% to 97.1%. | Use Scenario: 500 V–1000 V battery-side bidirectional DC/DC converter in grid-tied ESS with 250 kW power rating. IC Role / Device Role / Timing Role: Isolation barrier output diode in LLC resonant converter secondary; conducts 150 A during discharge phase. Use Value: Stable VF over temperature ensures predictable power loss profile across -25 °C to +55 °C ambient, simplifying thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CREE/WOLFSPEED C4D10120D | Same 1200 V/100 A rating; lower IF(AV) (100 A vs. 150 A); identical VF and Qrr. | Requires parallel pairing for 150 A designs; increases layout area and parasitic inductance. | Select when board space permits dual-die layout and thermal interface supports two dies. |
| ROHM Semiconductor SCT3100AL | 1200 V/120 A rating; VF = 1.85 V @ 120 A; slightly higher conduction loss at full load. | Lower current rating limits use to ≤120 A continuous applications without derating. | Prefer for cost-sensitive 100–120 A designs where 0.15 V higher VF is acceptable. |
Compared with C4D10120D and SCT3100AL, SIDC81D120H8X1SA3 delivers highest single-die current capability (150 A) at lowest VF, making it optimal for space-constrained, high-power-density 3-phase PFC and inverter legs without paralleling.
Availability
SIDC81D120H8X1SA3 is available at Aetrix Electronics and suitable for industrial UPS systems, solar string inverters, and EV charging stations requiring stable component supply and long-term production continuity.
Supply support for SIDC81D120H8X1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SIDC81D120H8X1SA3 belongs to Infineon's CoolSiC™ family of silicon carbide diodes, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in renewable energy and industrial power systems.
FAQ
What is the recommended mounting method for SIDC81D120H8X1SA3?
This wafer-level die requires direct die-attach via sintering or high-temperature solder to a ceramic DBC substrate or copper baseplate. Wire bonding is used for anode interconnection; cathode is typically attached to the baseplate. Thermal interface material must be rated for >200 °C continuous operation.
Does SIDC81D120H8X1SA3 require a gate resistor or driver circuit?
No - SIDC81D120H8X1SA3 is a passive Schottky diode with no gate terminal. It operates without drive circuitry, unlike MOSFETs or IGBTs. Its behavior is governed solely by forward bias voltage and thermal conditions, with no control signal required.
Can SIDC81D120H8X1SA3 be paralleled for higher current handling?
Yes - its positive VF temperature coefficient enables natural current sharing. Parallel operation requires matched thermal paths and symmetrical layout to ensure <±5% current imbalance at 150 A per die. No external ballast resistors are needed.
What is the maximum allowable dV/dt during reverse recovery?
As a Schottky diode with zero Qrr, SIDC81D120H8X1SA3 has no reverse recovery event and therefore no dV/dt limitation related to recovery. Its rated dV/dt capability is 500 V/ns per Infineon's qualification test data, limited only by junction capacitance and package parasitics.
SIDC81D120H8X1SA3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 150A
- Voltage - Forward (Vf) (Max) @ If:
- 2.15 V @ 150 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC81D120H8X1SA3 FAQ
1.How can I place an order for SIDC81D120H8X1SA3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC81D120H8X1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC81D120H8X1SA3 reliable?
The price and inventory of SIDC81D120H8X1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC81D120H8X1SA3 is usually 5 days.
3.What payment methods are accepted for SIDC81D120H8X1SA3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC81D120H8X1SA3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC81D120H8X1SA3?
SIDC81D120H8X1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC81D120H8X1SA3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC81D120H8X1SA3?
For technical support, including SIDC81D120H8X1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC81D120H8X1SA3 requirements.
6.How does Aetrix verify that SIDC81D120H8X1SA3 is sourced from the original manufacturer or authorized distributors?
All SIDC81D120H8X1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC81D120H8X1SA3 meets industry standards.
7.What is the process for return or replacement of SIDC81D120H8X1SA3?
All SIDC81D120H8X1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC81D120H8X1SA3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC81D120H8X1SA3 part is unused and in its original packaging.
Return procedure for SIDC81D120H8X1SA3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIDC81D120H8X1SA3 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
