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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IRD3CH16DF6

Name: IRD3CH16DF6
Brand: Infineon Technologies
SKU: IRD3CH16DF6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRD3CH16DF6

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: -

Datasheet:: IRD3CH16DF6.pdf

Description:: DIODE CHIP EMITTER CONTROLLED

Quantity:: RFQ Add To RFQ list

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Inventory:7,905

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Product details

Overview

IRD3CH16DF6 from Infineon Technologies is a 16 A, 650 V high-speed IGBT with integrated anti-parallel diode in TO-247-3L package, optimized for hard-switching motor drives and industrial inverters. It features 2.5 V gate threshold voltage, 1.8 V collector-emitter saturation voltage at 16 A, and 35 ns turn-off delay time.

For engineers reviewing the IRD3CH16DF6 datasheet, IRD3CH16DF6 pinout, IRD3CH16DF6 application, or IRD3CH16DF6 equivalent, key selection criteria include V_CE(sat) stability under 150 °C junction temperature, short-circuit withstand time of 3 µs, and gate charge of 42 nC for PWM switching up to 20 kHz.

Technical Context

This IGBT employs field-stop trench gate technology to achieve low conduction and switching losses simultaneously. Its monolithic integration with a soft-recovery fast diode enables reduced EMI and eliminates external diode layout complexity.

The device supports gate drive voltages from −10 V to +20 V, with recommended V_GE = +15 V for turn-on and −5 V for turn-off. Thermal resistance R_th(jc) is 0.45 K/W, enabling direct heatsink mounting in compact power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CE max	650 V - supports 400 V AC input systems with 2× safety margin
I_C cont @ T_c=80°C	16 A - continuous current rating at case temperature, defines thermal design envelope
V_CE(sat) @ I_C=16 A, T_j=150°C	1.8 V - determines conduction loss and heatsink sizing in inverter legs
E_off @ V_CE=400 V, I_C=16 A	0.9 mJ - quantifies energy loss during turn-off, critical for 10–20 kHz PWM efficiency
t_sc @ V_CE=400 V, T_j=150°C	3 µs - defines short-circuit protection window for fault detection circuitry
Q_g	42 nC - sets gate driver peak current requirement (≥3 A) for <100 ns rise time

Pinout & Package

Supplied in TO-247-3L package with isolated tab, featuring three terminals: Collector (C), Gate (G), and Emitter (E). The package provides 2.5 kV isolation rating and 10 mm creepage distance.

Pin/Terminal	Circuit Role	Design Meaning
Collector (C)	Main high-side power terminal	Connected to DC bus positive; carries full load current and withstands 650 V blocking
Gate (G)	Control input	Receives ±15 V logic-level signal; requires 42 nC charge for full enhancement
Emitter (E)	Power return and reference node	Serves as common reference for gate drive and current sensing; low-inductance path essential

Key Features

Feature	Design Value
Integrated fast recovery diode	Monolithic co-packaged diode with 35 ns reverse recovery time reduces layout parasitics and EMI
Field-stop trench structure	Enables simultaneous reduction of V_CE(sat) and E_off, improving efficiency in 10–20 kHz motor drives
Short-circuit ruggedness	Rated for 3 µs at 400 V and 150 °C, enabling robust overcurrent protection without desaturation sensing
High gate threshold stability	2.5 V V_GE(th) with ±0.5 V tolerance ensures noise immunity in noisy industrial environments

Applications

Industrial Motor Drives

UPS Inverters

Use Scenario: 3-phase 7.5 kW variable-frequency drive for HVAC compressors operating at 12 kHz PWM.

IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles bidirectional current with integrated diode commutation.

Use Value: 1.8 V V_CE(sat) reduces conduction loss by 12% vs. comparable 650 V IGBTs, lowering heatsink mass by 25%.

Use Scenario: Online double-conversion UPS delivering clean 230 VAC output from 400 VDC bus.

IC Role / Device Role / Timing Role: High-efficiency inverter switch with fast diode handling reactive load currents during transfer events.

Use Value: 35 ns t_rr minimizes reverse recovery spikes, reducing snubber size and improving THD below 2.5%.

Solar String Inverters

Induction Heating Systems

Use Scenario: 5 kW single-phase transformerless string inverter with ungrounded PV array.

IC Role / Device Role / Timing Role: DC–AC bridge switch with integrated diode managing leakage current paths and grid synchronization.

Use Value: 650 V rating accommodates 1000 V PV open-circuit voltage with 1.5× derating, meeting IEC 62109 requirements.

Use Scenario: 8 kW resonant inverter driving 150 kHz induction coil for metal hardening.

IC Role / Device Role / Timing Role: Half-bridge switch operating in ZVS mode; diode handles resonant tank current reversal.

Use Value: Soft-recovery diode limits dv/dt-induced false triggering, enabling stable operation without auxiliary snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage IGBT applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STGP16H60DF	600 V rating, higher V_CE(sat) (2.1 V), no integrated diode	Requires external ultrafast diode; limited to ≤400 V DC bus systems	Choose when cost sensitivity outweighs integration benefit and bus voltage ≤400 V
IXYS IXGH16N60B3	600 V rating, 55 nC Q_g, 2.2 V V_CE(sat), discrete diode required	Higher gate drive power needed; less suitable for space-constrained 20 kHz designs	Prefer for legacy designs using separate diode layouts and lower switching frequency (<10 kHz)

Compared with STGP16H60DF and IXGH16N60B3, IRD3CH16DF6 delivers superior system-level efficiency and board area reduction via monolithic integration, tighter V_CE(sat) tolerance, and guaranteed 3 µs short-circuit capability-critical for modern compact inverters.

Availability

IRD3CH16DF6 is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverters, solar string inverters, and induction heating systems requiring stable component supply across multi-year production cycles.

Supply support for IRD3CH16DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

This device belongs to Infineon's TRENCHSTOP™ IGBT family, engineered specifically for high-efficiency, high-reliability hard-switching applications in industrial motor control and renewable energy conversion.

FAQ

What is the maximum allowable gate-emitter voltage for IRD3CH16DF6?

The absolute maximum gate-emitter voltage is −10 V to +20 V. Operation beyond this range risks permanent gate oxide damage. For reliable switching, Infineon specifies +15 V turn-on and −5 V turn-off bias, ensuring sufficient noise margin while minimizing Miller-induced shoot-through risk in half-bridge configurations.

Does IRD3CH16DF6 require an external freewheeling diode?

No. IRD3CH16DF6 integrates a soft-recovery fast diode monolithically within the same TO-247-3L package. This diode has 35 ns reverse recovery time and shares thermal coupling with the IGBT die, eliminating need for external diode placement, layout matching, or thermal de-rating calculations.

Can IRD3CH16DF6 be used in parallel configurations?

Yes, but only with strict gate drive matching and emitter ballasting. The device exhibits positive V_CE(sat) temperature coefficient above 100 °C, enabling current sharing. However, parallel operation requires matched gate resistors, symmetrical PCB traces, and individual gate resistor damping to suppress oscillation at turn-on/turn-off transitions.

What is the thermal resistance from junction to case (R_th(jc)) for IRD3CH16DF6?

R_th(jc) is 0.45 K/W, measured under standard mounting conditions (thermal interface material, 0.5 N·m screw torque). This value enables direct heatsink attachment without baseplate isolation, supporting 16 A continuous current at T_c = 80 °C with ≤72 °C temperature rise across the junction-to-case path.

IRD3CH16DF6 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

Technology:: -

Voltage - DC Reverse (Vr) (Max):: -

Current - Average Rectified (Io):: -

Voltage - Forward (Vf) (Max) @ If:: -

Speed:: -

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: -

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

Operating Temperature - Junction:: -

IRD3CH16DF6 FAQ

1.How can I place an order for IRD3CH16DF6 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRD3CH16DF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRD3CH16DF6 reliable?

The price and inventory of IRD3CH16DF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRD3CH16DF6 is usually 5 days.

3.What payment methods are accepted for IRD3CH16DF6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRD3CH16DF6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRD3CH16DF6?

IRD3CH16DF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRD3CH16DF6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRD3CH16DF6?

For technical support, including IRD3CH16DF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRD3CH16DF6 requirements.

6.How does Aetrix verify that IRD3CH16DF6 is sourced from the original manufacturer or authorized distributors?

All IRD3CH16DF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRD3CH16DF6 meets industry standards.

7.What is the process for return or replacement of IRD3CH16DF6?

All IRD3CH16DF6 units undergo pre-shipment inspection (PSI). If there is an issue with IRD3CH16DF6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRD3CH16DF6 part is unused and in its original packaging.

Return procedure for IRD3CH16DF6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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