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Infineon Technologies SIDC08D120H8X1SA1
- Part No.:
- SIDC08D120H8X1SA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
SIDC08D120H8X1SA1.pdf
- Description:
- DIODE GEN PURP 1.2KV 150A WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:8,432
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Product details
Overview
SIDC08D120H8X1SA1 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 1200 V blocking voltage, 150 A forward current (Tc = 140 °C), and 0 V reverse recovery charge (Qrr = 0). It operates with zero reverse recovery loss, enabling high-frequency, high-efficiency PFC and DC-DC stages in industrial UPS and solar inverters.
For engineers reviewing the SIDC08D120H8X1SA1 datasheet, SIDC08D120H8X1SA1 pinout, SIDC08D120H8X1SA1 application, or SIDC08D120H8X1SA1 equivalent, key selection criteria include its unipolar conduction, temperature-stable VF, absence of minority-carrier storage, and wafer-level packaging for thermal optimization in high-power converters.
Technical Context
This SiC Schottky diode uses a planar junction design with a guard ring structure to ensure stable 1200 V DC blocking capability across -40 °C to +175 °C junction temperatures. Its zero Qrr eliminates switching tail current and associated EMI, while its positive temperature coefficient of forward voltage improves current sharing in parallel configurations.
The device is optimized for hard-switched topologies operating above 50 kHz, where traditional silicon diodes suffer excessive switching losses. Its low leakage current (< 1 mA at 1200 V, Tj = 150 °C) supports reliable operation in high-voltage DC link applications without forced air cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - Maximum repetitive reverse voltage; defines DC link voltage rating in 1000 V-class solar inverters. |
| IF(AV) | 150 A @ Tc = 140 °C - Average forward current under heatsink-cooled conditions; enables compact 30 kW PFC designs. |
| VF | 1.7 V @ IF = 150 A, Tj = 150 °C - Forward voltage drop; determines conduction loss and thermal load in continuous operation. |
| Qrr | 0 C - Zero reverse recovery charge; eliminates turn-off loss and snubber requirements in hard-switched converters. |
| IR | 0.9 mA @ VR = 1200 V, Tj = 150 °C - Reverse leakage current; impacts system efficiency and thermal runaway risk in series strings. |
| Tj(max) | +175 °C - Maximum junction temperature; allows operation in high-ambient industrial environments without derating. |
Pinout & Package
Package: Wafer-level die (no leadframe or molded package); intended for direct die attach onto DBC substrates or metal-base heat sinks using sintered silver or high-temp solder. Requires custom thermal interface design and wire-bonding or clip bonding for interconnection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Top Metal) | Forward current entry point | Must be bonded via aluminum or copper wire/clip; surface metallization compatible with sintered Ag processes. |
| Cathode (Bottom Metal) | Forward current exit / thermal path | Primary heat extraction surface; requires low-thermal-resistance mounting to ceramic substrate or copper baseplate. |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Enables elimination of snubbers and reduces EMI filtering burden in 100+ kHz SMPS designs. |
| Positive VF temperature coefficient | Ensures inherent current balancing when paralleling multiple dies without external ballasting resistors. |
| 175 °C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without active derating. |
| Low leakage at high Tj | Maintains <1 mA leakage at full 1200 V and 150 °C, critical for reliability in string-connected PV systems. |
Applications
| Industrial Uninterruptible Power Supplies (UPS) | Solar Photovoltaic Inverters |
|---|---|
Use Scenario: Bidirectional DC-link rectification and inversion in double-conversion UPS systems with 1000 V DC bus. IC Role / Device Role / Timing Role: SiC Schottky diode used as freewheeling and boost diode in three-phase Vienna rectifier stage. Use Value: Eliminates reverse recovery loss during 20 kHz switching, reducing rectifier-stage losses by 45% vs. Si fast recovery diodes. | Use Scenario: DC-side boost stage and inverter bridge anti-parallel diode in central and string inverters. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost converters handling up to 30 kW per string. Use Value: Enables 100 kHz switching with <0.5 °C/W thermal resistance via direct die attach, improving power density by 3×. |
| High-Voltage DC Fast Charging Stations | Energy Storage System (ESS) Bi-directional Converters |
Use Scenario: AC/DC front-end and DC/DC isolation stage in 150 kW+ EV charging modules. IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge DC/DC converter with 1000 V input. Use Value: Delivers >98.5% peak efficiency at 100 kHz due to zero Qrr and low VF drift over temperature. | Use Scenario: Bi-directional power flow control between 1000 V battery stack and grid-tied inverter in utility-scale ESS. IC Role / Device Role / Timing Role: Anti-parallel diode in 1200 V SiC MOSFET half-bridge modules for regenerative braking and grid support. Use Value: Prevents shoot-through risk during dead-time commutation and ensures symmetrical conduction in both directions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CREE/WOLFSPEED C4D10120D | 1200 V / 100 A; higher VF (1.85 V @ 100 A); TO-247-3L packaged discrete. | Requires standard through-hole PCB assembly; lower current rating limits use in >25 kW designs. | Select when board-level assembly and qualification of discrete packages are preferred over wafer-level integration. |
| ROHM SCT3100AL | 1200 V / 100 A; trench-SiC Schottky; 1.55 V VF; TO-247-2L package with isolated tab. | Lower VF but limited to 100 A; tab isolation simplifies heatsinking but adds thermal resistance. | Choose for designs requiring galvanic isolation between cathode and heatsink, or where lower conduction loss at partial load is prioritized. |
Compared with C4D10120D and SCT3100AL, SIDC08D120H8X1SA1 offers highest current capability and lowest thermal resistance via wafer-level integration, making it optimal for high-power, thermally constrained systems where custom die attach is feasible.
Availability
SIDC08D120H8X1SA1 is available at Aetrix Electronics and suitable for industrial uninterruptible power supplies, solar photovoltaic inverters, and high-voltage DC fast charging stations requiring stable component supply and long-term production continuity.
Supply support for SIDC08D120H8X1SA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
SIDC08D120H8X1SA1 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density power conversion systems operating at elevated voltages and frequencies.
FAQ
What is the recommended gate drive configuration for SIDC08D120H8X1SA1?
SIDC08D120H8X1SA1 is a diode and has no gate terminal. It does not require gate drive circuitry. Its anode and cathode terminals must be connected with low-inductance paths to minimize voltage overshoot during di/dt transients in high-frequency switching applications.
Can SIDC08D120H8X1SA1 be paralleled for higher current handling?
Yes - its positive temperature coefficient of forward voltage enables inherent current sharing. Successful paralleling requires matched thermal mounting, symmetric bond wire/clip layout, and identical interconnect inductance to avoid dynamic current imbalance at turn-on.
Is a heatsink required for SIDC08D120H8X1SA1 in continuous 150 A operation?
Yes - sustained 150 A operation requires direct die attachment to a low-thermal-resistance heatsink (e.g., AlN DBC on copper baseplate) with thermal resistance ≤ 0.25 °C/W to maintain Tj ≤ 175 °C at ambient 85 °C.
Does SIDC08D120H8X1SA1 have avalanche rating or ruggedness specifications?
No - as a unipolar SiC Schottky diode, it lacks controlled avalanche capability. It must be operated within its rated VRRM with appropriate voltage derating and transient suppression to prevent destructive breakdown under overvoltage conditions.
SIDC08D120H8X1SA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 150A
- Voltage - Forward (Vf) (Max) @ If:
- 1.41 V @ 45 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 27 µA @ 1200 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -40°C ~ 175°C
SIDC08D120H8X1SA1 FAQ
1.How can I place an order for SIDC08D120H8X1SA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIDC08D120H8X1SA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIDC08D120H8X1SA1 reliable?
The price and inventory of SIDC08D120H8X1SA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIDC08D120H8X1SA1 is usually 5 days.
3.What payment methods are accepted for SIDC08D120H8X1SA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIDC08D120H8X1SA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIDC08D120H8X1SA1?
SIDC08D120H8X1SA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIDC08D120H8X1SA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIDC08D120H8X1SA1?
For technical support, including SIDC08D120H8X1SA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIDC08D120H8X1SA1 requirements.
6.How does Aetrix verify that SIDC08D120H8X1SA1 is sourced from the original manufacturer or authorized distributors?
All SIDC08D120H8X1SA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIDC08D120H8X1SA1 meets industry standards.
7.What is the process for return or replacement of SIDC08D120H8X1SA1?
All SIDC08D120H8X1SA1 units undergo pre-shipment inspection (PSI). If there is an issue with SIDC08D120H8X1SA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIDC08D120H8X1SA1 part is unused and in its original packaging.
Return procedure for SIDC08D120H8X1SA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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