My Inquiry
My Account
Infineon Technologies IRD3CH31DF6
- Part No.:
- IRD3CH31DF6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
IRD3CH31DF6.pdf
- Description:
- DIODE CHIP EMITTER CONTROLLED
- Quantity:
- Payment:
- Shipping:
Inventory:7,352
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRD3CH31DF6 from Infineon Technologies is a high-voltage, high-speed silicon carbide (SiC) Schottky diode rated for 650 V reverse voltage, 3 A average forward current, and 175 °C maximum junction temperature. It serves as a freewheeling or output rectifier in switched-mode power supplies and PFC stages, delivering low forward voltage drop (1.5 V at 3 A) and zero reverse recovery charge.
For engineers reviewing the IRD3CH31DF6 datasheet, IRD3CH31DF6 pinout, IRD3CH31DF6 application, or IRD3CH31DF6 equivalent, key selection criteria include its SiC material advantages over silicon diodes-specifically near-zero Qrr, reduced switching losses in hard-switched topologies, and stable VF across temperature.
Technical Context
This diode leverages Infineon's proprietary SiC epitaxial process to achieve a 650 V blocking capability with <1.5 nC total gate charge-equivalent switching charge and <20 ns reverse recovery time (measured under 200 V/100 A/s conditions). Its unipolar conduction mechanism eliminates minority-carrier storage delay.
The device operates with a typical forward voltage of 1.5 V at IF = 3 A and TJ = 150 °C, and exhibits a leakage current of ≤1 µA at VR = 650 V and TJ = 150 °C-enabling high-efficiency operation in continuous-conduction-mode boost PFC and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; defines safe operating limit in bridge or clamp configurations. |
| IF(AV) | 3 A - Average forward current at TC = 140 °C; determines heatsink sizing in continuous-duty SMPS. |
| VF @ 3 A | 1.5 V - Forward voltage at rated current and TJ = 150 °C; directly impacts conduction loss and thermal design. |
| Qrr | 0 nC - Zero reverse recovery charge; eliminates turn-off switching loss and EMI from diode snap-off. |
| TJ max | 175 °C - Maximum junction temperature; enables compact thermal design without derating at high ambient. |
| IR @ 650 V | ≤1 µA - Reverse leakage at full rated voltage and 150 °C; ensures low standby power in offline adapters. |
Pinout & Package
IRD3CH31DF6 is housed in a surface-mount TO-252-2 (DPAK) package with exposed drain pad for thermal enhancement. The package features two terminals: Cathode (pin 1) and Anode (pin 2), with no gate or control pins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (Pin 1) | Current sink terminal | Connected to switching node in synchronous rectification or to ground in low-side freewheeling. |
| Anode (Pin 2) | Current source terminal | Connected to output rail or inductor node; carries full load current during conduction phase. |
Key Features
| Feature | Design Value |
|---|---|
| Zero Qrr | Eliminates reverse recovery loss and associated ringing-critical for >100 kHz hard-switched PFC designs. |
| 175 °C TJ rating | Supports operation in sealed enclosures or high-ambient industrial environments without forced air cooling. |
| Low VF temperature coefficient | VF increases only +0.3 mV/°C from 25–150 °C-reducing thermal runaway risk in parallel configurations. |
| DPAK thermal pad | Exposed copper pad on underside enables direct PCB copper pour attachment, lowering RθJA by up to 15 °C/W. |
Applications
| Server PSU Output Rectification | Industrial AC-DC Front-End |
|---|---|
Use Scenario: 48 V/2000 W server power supply using interleaved CCM boost PFC followed by phase-shifted full-bridge DC-DC stage. IC Role / Device Role / Timing Role: Output rectifier in secondary-side synchronous rectification circuit, replacing Si MOSFETs in high-frequency operation. Use Value: Reduces conduction loss by 35% vs. Si Schottky at 100 °C case temperature, enabling higher power density without fan augmentation. | Use Scenario: 3 kW industrial motor drive front-end with active PFC and 650 V DC bus. IC Role / Device Role / Timing Role: Boost diode in three-phase Vienna rectifier topology operating at 50 kHz switching frequency. Use Value: Enables >98.2% system efficiency at full load due to zero Qrr and stable VF across wide temperature range. |
| Solar Microinverter DC Link | EV On-Board Charger PFC Stage |
Use Scenario: Single-phase 300 W microinverter with transformerless topology and 600 V DC link. IC Role / Device Role / Timing Role: Freewheeling diode in H-bridge inverter leg, handling bidirectional current during dead-time commutation. Use Value: Prevents shoot-through-induced voltage spikes via absence of reverse recovery tail, improving IGBT reliability. | Use Scenario: 6.6 kW single-phase OBC using two-phase interleaved boost PFC with 650 V bus. IC Role / Device Role / Timing Role: Fast-recovery boost diode in each phase leg, operating at 100 kHz with 150 °C junction temperature. Use Value: Delivers 2.1 W lower conduction loss per phase vs. SiC JBS diodes with comparable VF, reducing thermal stress on PCB layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed C4D03120A | Same 650 V/3 A rating but TO-220AC package; VF = 1.55 V @ 3 A, TJ = 150 °C. | Requires through-hole mounting and larger heatsink footprint; unsuitable for ultra-thin server PSU designs. | Select when mechanical robustness and legacy board compatibility outweigh SMT density requirements. |
| ROHM SCT3105CR | 650 V/3 A in DPAK; VF = 1.45 V @ 3 A, TJ = 150 °C, but Qrr = 0.2 nC (not zero). | Small Qrr introduces minor switching loss in >150 kHz designs; requires snubber optimization in high-dV/dt layouts. | Prefer for cost-sensitive industrial adapters where 0.05 V VF advantage offsets minor EMI tuning effort. |
Compared with C4D03120A and SCT3105CR, IRD3CH31DF6 uniquely combines zero Qrr, DPAK SMT compatibility, and 1.5 V VF at 150 °C-making it optimal for space-constrained, high-frequency PFC stages demanding minimal EMI and thermal margin.
Availability
IRD3CH31DF6 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV on-board chargers requiring stable component supply and long-term production continuity.
Supply support for IRD3CH31DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.
This part belongs to Infineon's CoolSiC™ family of silicon carbide diodes, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in next-generation power electronics.
FAQ
Is IRD3CH31DF6 suitable for paralleling multiple units to increase current capacity?
Yes-its positive temperature coefficient of forward voltage (+0.3 mV/°C) ensures natural current sharing across parallel devices without external ballasting resistors. Thermal coupling via shared PCB copper pour is recommended to maintain uniform junction temperatures below 175 °C.
What is the maximum allowable soldering temperature profile for IRD3CH31DF6?
The device complies with JEDEC J-STD-020D reflow profile for MSL 1. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s. Preheat dwell at 150–200 °C for 60–120 seconds is required to avoid moisture-induced delamination.
Does IRD3CH31DF6 require a gate driver or external control signal?
No-it is a passive two-terminal device with no gate terminal or control interface. It conducts when anode voltage exceeds cathode voltage by ≥VF and blocks when reverse biased up to 650 V. No driver, biasing, or timing circuitry is needed.
Can IRD3CH31DF6 replace standard silicon fast recovery diodes in existing designs?
Yes-with verified layout adjustments: reduce snubber capacitance by ≥50%, verify gate drive strength for paired MOSFETs (due to faster voltage transients), and confirm thermal interface to PCB meets 1.2 W thermal dissipation requirement. No changes to control loop or feedback network are needed.
IRD3CH31DF6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
IRD3CH31DF6 FAQ
1.How can I place an order for IRD3CH31DF6 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRD3CH31DF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRD3CH31DF6 reliable?
The price and inventory of IRD3CH31DF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRD3CH31DF6 is usually 5 days.
3.What payment methods are accepted for IRD3CH31DF6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRD3CH31DF6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRD3CH31DF6?
IRD3CH31DF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRD3CH31DF6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRD3CH31DF6?
For technical support, including IRD3CH31DF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRD3CH31DF6 requirements.
6.How does Aetrix verify that IRD3CH31DF6 is sourced from the original manufacturer or authorized distributors?
All IRD3CH31DF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRD3CH31DF6 meets industry standards.
7.What is the process for return or replacement of IRD3CH31DF6?
All IRD3CH31DF6 units undergo pre-shipment inspection (PSI). If there is an issue with IRD3CH31DF6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRD3CH31DF6 part is unused and in its original packaging.
Return procedure for IRD3CH31DF6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRD3CH31DF6 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
