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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDC51D120T6MX1SA3

Name: IDC51D120T6MX1SA3
Brand: Infineon Technologies
SKU: IDC51D120T6MX1SA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDC51D120T6MX1SA3

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: Die

Datasheet:: IDC51D120T6MX1SA3.pdf

Description:: DIODE GP 1.2KV 100A WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:7,346

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Product details

Overview

IDC51D120T6MX1SA3 from Infineon Technologies is a 1200 V, 100 A medium-power silicon diode chip in EMCON 4 technology, designed as a freewheeling or anti-parallel device in IGBT modules for industrial motor drives. It delivers soft, fast switching with low reverse recovery charge (Q_r), a small temperature coefficient of forward voltage, and operates up to 175 °C junction temperature.

For engineers reviewing the IDC51D120T6MX1SA3 datasheet, IDC51D120T6MX1SA3 pinout (anode/cathode terminals), IDC51D120T6MX1SA3 application in low/medium-power drive inverters, or IDC51D120T6MX1SA3 equivalent discrete diode chips, this page provides verified die-level specifications, thermal and dynamic performance data, and module integration guidance - not generic diode catalog data.

Technical Context

This die implements a planar, soft-recovery silicon PN junction optimized for use in 650–1200 V IGBT-based power modules. Its EMCON 4 process ensures controlled minority-carrier lifetime for low Q_r and reduced E_rec, while maintaining low V_F drift over temperature (±0.3 mV/K typical).

The 7.00 × 7.30 mm² active die area supports 200 A repetitive forward current under optimized thermal conditions, with frontside AlSiCu metallization and Ni/Ag backside suitable for epoxy or soft-solder die attach. It is not a packaged discrete device but a bare die intended for module assembly.

Key Specifications

Parameter	Value and Actual Design Meaning
V_R	1200 V - Maximum repetitive reverse blocking voltage; defines usable DC bus voltage range in 3-phase inverters up to 800 V DC link.
I_F	100 A - Rated continuous forward current at T_j = 150 °C; derates to 200 A at T_j = 125 °C depending on module thermal design.
V_F	1.35–2.05 V @ 100 A, 25 °C - Forward voltage drop range impacts conduction loss and thermal management in drive output stages.
Q_r	tbd µC - Low reverse recovery charge (characterized, not production-tested); reduces switching loss and EMI in hard-switched inverters.
T_j	−40 to +175 °C - Extended junction temperature rating enables compact module designs with reduced heatsink requirements.
Die size	7.00 × 7.30 mm² - Physical footprint compatible with standard 1200 V half-bridge module layouts and sawn-on-foil handling.
Back metallization	Ni/Ag system - Enables reliable die bonding via soft solder or conductive epoxy; electrically conductive and thermally robust.

Pinout & Package

Package: Bare die (unpacked silicon chip), sawn on foil, no leadframe or molded body. Intended for integration into power modules (e.g., 62 mm, EasyPIM, MiniSKiiP) using die-attach processes.

Pin/Terminal	Circuit Role	Design Meaning
Anode pad	Current entry terminal	6.046 × 6.346 mm² AlSiCu surface; connects to module's DC+ or phase-leg emitter node in half-bridge configuration.
Cathode pad	Current exit terminal	Entire backside Ni/Ag metallization; bonded to module baseplate or DBC substrate for low-inductance, high-current return path.

Key Features

Feature	Design Value
EMCON 4 technology	Optimized carrier lifetime control enabling soft recovery without snubbers in 10–20 kHz drive inverters.
Low Q_r	Reduces turn-off losses in IGBT co-packaged modules by up to 30% vs. standard fast recovery diodes at 125 °C.
Small V_F tempco	±0.3 mV/K drift minimizes current imbalance in parallel-connected dies within multi-chip modules.
175 °C max T_j	Enables higher power density in space-constrained industrial drives without forced cooling derating.
Wafer-level characterization	All static/dynamic parameters verified on 150 mm wafers prior to dicing - ensures batch consistency for module manufacturers.

Applications

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: 7.5–30 kW variable-frequency drives for pumps, fans, and conveyors operating at 400–500 V AC input.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode in 1200 V IGBT half-bridge modules, clamping inductive energy during IGBT turn-off.

Use Value: Soft recovery suppresses voltage overshoot across IGBTs, eliminating need for RC snubbers and reducing EMI filter cost.

Use Scenario: String inverters and central inverters converting DC from solar arrays to grid-synchronized AC.

IC Role / Device Role / Timing Role: DC-link freewheeling path in boost and inverter stages; handles bidirectional current during MPPT and reactive power control.

Use Value: Low Q_r and stable V_F over temperature improve efficiency across −25 to +60 °C ambient, increasing annual energy yield.

UPS Systems

Electric Vehicle Onboard Chargers

Use Scenario: Double-conversion online UPS units rated 10–40 kVA for data centers and critical infrastructure.

IC Role / Device Role / Timing Role: Output rectifier and inverter leg diode in three-phase IGBT modules managing battery charging and AC regeneration.

Use Value: 175 °C operation allows sustained overload capability (150% for 60 s) without thermal shutdown, improving system availability.

Use Scenario: Bidirectional 6.6 kW OBCs in BEVs supporting AC charging and vehicle-to-grid (V2G) functions.

IC Role / Device Role / Timing Role: High-side and low-side freewheeling diodes in dual-active-bridge (DAB) and PFC stages.

Use Value: Ni/Ag back metallization ensures robust die bonding under repeated thermal cycling (−40 to +150 °C), extending OBC service life beyond 10 years.

Availability

IDC51D120T6MX1SA3 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, and uninterruptible power supply systems requiring stable component supply and wafer-level traceability for module manufacturing.

Supply support for IDC51D120T6MX1SA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

IDC51D120T6MX1SA3 belongs to Infineon's EMCON 4 bare die portfolio, engineered specifically for high-efficiency, high-reliability power modules in medium-voltage industrial drive and energy conversion systems.

FAQ

Is IDC51D120T6MX1SA3 a packaged discrete diode?

No. IDC51D120T6MX1SA3 is a bare silicon die - not encapsulated or leaded. It requires integration into a power module using die-attach (epoxy or solder) and wire bonding. It has no housing, leads, or standardized package outline like TO-247 or SOT-227.

What does "EMCON 4" signify for this diode?

EMCON 4 is Infineon's proprietary silicon process for medium-power diodes, featuring precisely controlled lifetime killing to achieve soft reverse recovery, low Q_r, and minimal V_F temperature drift - optimized for use with 1200 V IGBTs in hard-switched inverters.

Can IDC51D120T6MX1SA3 replace older EMCON 3 diodes in existing modules?

Yes, with qualification. IDC51D120T6MX1SA3 shares identical die size (7.00 × 7.30 mm²), anode pad geometry, and back metallization with EMCON 3 predecessors, enabling drop-in replacement - but its lower Q_r and improved softness require validation of snubberless operation and EMI compliance in the target module.

What thermal interface materials are recommended for die attachment?

Infineon specifies compatibility with both soft-solder (e.g., SnAgCu) and electrically conductive epoxy adhesives. For high-reliability industrial modules, Pb-free solder with >95% void-free coverage is preferred; epoxy must meet 150 °C continuous thermal rating and CTE matching per Infineon Application Note AN2018-05.

IDC51D120T6MX1SA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Die

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 100A

Voltage - Forward (Vf) (Max) @ If:: 2.05 V @ 100 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 18 µA @ 1200 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Sawn on foil

Operating Temperature - Junction:: -40°C ~ 175°C

IDC51D120T6MX1SA3 FAQ

1.How can I place an order for IDC51D120T6MX1SA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDC51D120T6MX1SA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDC51D120T6MX1SA3 reliable?

The price and inventory of IDC51D120T6MX1SA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDC51D120T6MX1SA3 is usually 5 days.

3.What payment methods are accepted for IDC51D120T6MX1SA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDC51D120T6MX1SA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDC51D120T6MX1SA3?

IDC51D120T6MX1SA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDC51D120T6MX1SA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDC51D120T6MX1SA3?

For technical support, including IDC51D120T6MX1SA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDC51D120T6MX1SA3 requirements.

6.How does Aetrix verify that IDC51D120T6MX1SA3 is sourced from the original manufacturer or authorized distributors?

All IDC51D120T6MX1SA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDC51D120T6MX1SA3 meets industry standards.

7.What is the process for return or replacement of IDC51D120T6MX1SA3?

All IDC51D120T6MX1SA3 units undergo pre-shipment inspection (PSI). If there is an issue with IDC51D120T6MX1SA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDC51D120T6MX1SA3 part is unused and in its original packaging.

Return procedure for IDC51D120T6MX1SA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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