Infineon Technologies IDH05G65C5XKSA1

Overview

IDH05G65C5XKSA1 from Infineon is a 650 V, 5 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 5 A/25°C, 8 nC capacitive charge at 400 V, and rated for continuous operation up to 145°C junction temperature. It enables high-efficiency PFC stages in industrial SMPS and solar inverters.

For engineers reviewing the IDH05G65C5XKSA1 datasheet, IDH05G65C5XKSA1 pinout, IDH05G65C5XKSA1 application, or IDH05G65C5XKSA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance of 1.7–2.7 K/W (junction-to-case), surge current capability of 46 A (10 ms, 25°C), and compatibility with 650 V CoolMOS™ gate drivers in hard-switched topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery and temperature-independent switching transitions.

Designed specifically to complement 650 V CoolMOS™ power MOSFETs, it supports synchronous rectification and boost PFC in high-frequency (>100 kHz) converters where thermal management and EMI reduction are critical. The device sustains 650 V repetitive peak reverse voltage with <90 µA leakage at 650 V/25°C and <600 µA at 650 V/150°C.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not assigned (n.a.). Mounting torque: 60 N·cm for M2.5 screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05065E and STPSC5H065D, IDH05G65C5XKSA1 delivers the lowest combined Qc × Vf figure of merit and highest thermal conductivity via isolated tab, making it optimal for high-power-density, high-reliability PFC and inverter designs where thermal management is critical.

Availability

IDH05G65C5XKSA1 is available at Aetrix Electronics and suitable for solar inverter boost stages, industrial SMPS active PFC circuits, and uninterruptible power supply (UPS) inverters requiring stable component supply and long-term lifecycle support.

Supply support for IDH05G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and wide-bandgap devices, with leadership in SiC and GaN technology roadmaps.

IDH05G65C5XKSA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered to deliver best-in-class efficiency and thermal robustness for high-frequency, high-voltage power conversion in renewable energy and industrial systems.

FAQ

Is IDH05G65C5XKSA1 pin-compatible with standard TO-220-2 Si diodes?

Yes - it uses the industry-standard PG-TO220-2 footprint with cathode (Pin 1) and anode (Pin 2) assignments matching JEDEC TO-220AB mechanical outline. The isolated metal tab allows direct heatsink mounting without insulation hardware, unlike non-isolated Si diodes.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 5 A is rated for TC < 145°C. At TC = 145°C, junction temperature reaches 175°C (max) given RthJC ≤ 2.7 K/W. Operation above 145°C case temperature violates the continuous current rating and risks accelerated parametric drift.

Does IDH05G65C5XKSA1 require a gate driver or external control circuitry?

No - as a passive unipolar Schottky diode, it requires no gate drive, biasing, or control logic. It conducts automatically when forward-biased and blocks when reverse-biased, with no timing or sequencing dependencies beyond standard diode placement rules.

Can IDH05G65C5XKSA1 replace a 600 V Si fast recovery diode in an existing design?

Yes, with verification of voltage margin and thermal layout - its 650 V VRRM exceeds 600 V Si diodes, and zero Qrr eliminates snubber requirements. However, reduced forward voltage may alter current sharing in parallel configurations; verify layout parasitics and thermal coupling before drop-in replacement.