Infineon Technologies IDH20G65C5XKSA1

Overview

IDH20G65C5XKSA1 from Infineon Technologies is a 650 V, 20 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage at 20 A across -55°C to 150°C, and 29 nC capacitive charge at VR = 400 V. It operates up to 175°C junction temperature and delivers high surge current capability (142 A, 10 ms) for PFC and solar inverter boost stages.

For engineers reviewing the IDH20G65C5XKSA1 datasheet, IDH20G65C5XKSA1 pinout, IDH20G65C5XKSA1 application, or IDH20G65C5XKSA1 equivalent, key selection criteria include its SiC-specific thermal robustness (RthJC = 0.6 K/W), absence of reverse recovery loss, and compatibility with 650 V CoolMOS™ switching devices in high-frequency, high-efficiency power conversion designs.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal resistance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or temperature-dependent switching behavior.

The device is rated for 650 V repetitive peak reverse voltage and supports dv/dt ruggedness up to 100 V/ns under VR = 0–480 V. Its 175°C maximum junction temperature and 142 A non-repetitive surge rating (10 ms, TC = 25°C) support high-reliability operation in thermally constrained industrial and renewable energy systems.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole TO-220 variant with two leads: anode and cathode; no gate or control terminal).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065D and STPSC2006D, IDH20G65C5XKSA1 offers the lowest combined Qc × Vf figure of merit and best thermal resistance, making it optimal for high-density, high-frequency PFC and solar inverter applications demanding maximum efficiency and thermal headroom.

Availability

IDH20G65C5XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter boost stages, and uninterruptible power supply designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant SiC diodes with proven field reliability.

Supply support for IDH20G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon carbide and gallium nitride technologies.

IDH20G65C5XKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ switching devices in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

Is IDH20G65C5XKSA1 pin-compatible with standard TO-220-2 silicon diodes?

Yes - IDH20G65C5XKSA1 uses the PG-TO220-2 package with identical mechanical footprint and lead spacing as legacy Si TO-220-2 diodes. Pin 1 (tab) is cathode, Pin 2 is anode, and Pin 3 is non-connected. No PCB layout change is needed for drop-in replacement in existing designs.

What is the maximum allowable case temperature for continuous 20 A operation?

The datasheet specifies IF = 20 A is rated for TC < 135°C. At TC = 135°C, derating begins; full 20 A conduction is only guaranteed below that threshold. For sustained 20 A operation, thermal design must ensure case temperature remains ≤134°C, typically requiring ≤0.6 K/W total thermal resistance from junction to ambient.

Does IDH20G65C5XKSA1 require a gate resistor or driver circuit?

No - as a Schottky diode, IDH20G65C5XKSA1 has no gate terminal and requires no drive circuitry. It operates passively: forward conduction occurs when anode voltage exceeds cathode by ≥VF, and blocks reverse voltage up to 650 V without external control.

How does its reverse leakage compare to silicon diodes at 150°C?

At VR = 650 V and Tj = 150°C, IDH20G65C5XKSA1 exhibits IR = 4.1–1450 µA - significantly higher than Si diodes (<1 µA), but within expected SiC behavior. This leakage is stable and non-catastrophic; system design must account for it in high-impedance bias networks but poses no reliability risk.