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Infineon Technologies IDB30E60ATMA1
- Part No.:
- IDB30E60ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDB30E60ATMA1.pdf
- Description:
- DIODE GP 600V 52.3A TO263-3-2
- Quantity:
- Payment:
- Shipping:
Inventory:5,677
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Product details
Overview
IDB30E60ATMA1 from Infineon Technologies is a 600 V, 30 A fast-switching Emitter Controlled (EmCon) diode in PG-TO263-3 package, featuring 1.5 V forward voltage at 30 A and 126 ns reverse recovery time at 25 °C. It delivers soft switching, low Qrr (1100 nC), and operates up to 175 °C junction temperature-designed for high-frequency PFC stages in industrial SMPS.
For engineers reviewing the IDB30E60ATMA1 datasheet, IDB30E60ATMA1 pinout, IDB30E60ATMA1 application, or IDB30E60ATMA1 equivalent, key selection criteria include reverse recovery softness (S = 4), thermal resistance (RthJC = 1.05 K/W), parallel operation capability, and 600 V VRRM rating for 400 V DC-link designs.
Technical Context
The IDB30E60ATMA1 employs Infineon's EmCon technology to achieve controlled carrier lifetime and optimized minority-carrier distribution, enabling fast yet soft reverse recovery with low peak reverse current (Irrm = 19 A) and minimal voltage overshoot. Its structure suppresses oscillation during turn-off in hard-switched topologies.
Designed for continuous conduction mode (CCM) boost PFC, it supports diF/dt up to 1000 A/µs while maintaining trr ≤ 178 ns across –40 °C to 150 °C. The NC pin (Pin 1) isolates gate control circuitry, and the cathode-anode configuration (Pins 2–3) enables direct integration into half-bridge freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - Withstands 400 V DC-link with 50 % margin for transient spikes in industrial AC-DC converters |
| IF (rated) | 30 A - Continuous forward current at Tc = 90 °C; supports 2.5 kW PFC stage with forced-air cooling |
| VF @ 30 A, 25 °C | 1.5 V - Low conduction loss reduces thermal stress and improves efficiency vs. standard FRDs |
| trr @ 25 °C | 126 ns - Enables >100 kHz switching in CCM PFC without excessive EMI or snubber losses |
| Qrr @ 25 °C | 1100 nC - Low stored charge minimizes commutation loss in interleaved or multiphase PFC |
| RthJC | 1.05 K/W - Enables 80.9 W power dissipation at TC = 90 °C; compatible with standard TO-263 heatsinking |
| Tjmax | 175 °C - Supports operation in sealed enclosures or high-ambient environments without derating |
Pinout & Package
Package: PG-TO263-3 (D²PAK), surface-mount, RoHS-compliant, with isolated tab (Pin 2 = Cathode, Pin 3 = Anode, Pin 1 = NC).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No Connect (NC) | Electrically isolated terminal; must remain unconnected to avoid parasitic coupling or latch-up risk |
| Pin 2 | Cathode (C) | Main current exit path; thermally connected to exposed metal tab for direct heatsink mounting |
| Pin 3 | Anode (A) | Main current entry point; routed to PFC inductor or switch node with minimal loop inductance |
Key Features
| Feature | Design Value |
|---|---|
| Emitter Controlled (EmCon) structure | Enables precise control of carrier lifetime for consistent trr and S-factor across temperature and current |
| Soft recovery (S = 4–4.8) | Reduces voltage ringing and EMI generation during diode turn-off in high-di/dt circuits |
| Low Qrr (1100–2150 nC) | Lowers switching loss in interleaved PFC and improves thermal stability under load transients |
| 175 °C max junction temperature | Eliminates need for oversized heatsinks in compact, high-power-density industrial power supplies |
| Easy paralleling capability | Matched dynamic characteristics enable current sharing without external balancing resistors |
Applications
| Industrial Switch-Mode Power Supplies | Server & Telecom Rectification |
|---|---|
Use Scenario: Boost PFC stage in 3 kW telecom rectifier operating at 100 kHz with 400 V DC output. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode in continuous conduction mode (CCM) boost converter. Use Value: 126 ns trr and 1.5 V VF reduce conduction + switching losses by ~12 % vs. standard FRD, improving system efficiency to >96 %. | Use Scenario: Output rectification in dual-active-bridge (DAB) isolated DC-DC converter for AI server racks. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in high-frequency resonant topology. Use Value: Soft recovery (S = 4.6) suppresses voltage overshoot during zero-voltage switching transitions, reducing MOSFET stress and EMI filter size. |
| Renewable Energy Inverters | EV Onboard Chargers |
Use Scenario: DC-link clamping diode in 11 kW three-phase solar inverter with SiC MOSFETs. IC Role / Device Role / Timing Role: Bidirectional voltage clamp protecting DC bus during grid fault conditions. Use Value: 600 V VRRM and 175 °C Tjmax ensure reliable operation under overvoltage transients and ambient temperatures up to 85 °C. | Use Scenario: Input PFC diode in 6.6 kW single-phase OBC using interleaved boost architecture. IC Role / Device Role / Timing Role: High-current freewheeling path during phase-shifted PWM cycles. Use Value: Low Qrr (1950 nC at 125 °C) maintains balanced current sharing across parallel phases, preventing thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH30L06CW | 600 V, 30 A, VF = 1.75 V, trr = 45 ns, no soft recovery (S not specified) | Higher VF increases conduction loss; faster trr but harder switching raises EMI risk | Prefer when ultra-low trr dominates over softness and thermal performance |
| IXYS MBR3060CT | 600 V, 30 A, VF = 1.85 V, Schottky-like construction, no reverse recovery (Qrr ≈ 0) | No Qrr eliminates commutation loss but limited to <175 °C and lower VRRM margin | Choose only for low-temperature, low-VRRM-margin designs where zero Qrr outweighs VF penalty |
Compared with STTH30L06CW and MBR3060CT, IDB30E60ATMA1 uniquely balances low VF, soft recovery, and high-temperature robustness-making it optimal for thermally constrained, high-efficiency PFC where EMI and reliability are co-prioritized.
Availability
IDB30E60ATMA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, renewable energy inverters, EV onboard chargers, and telecom rectification requiring stable component supply and long-term lifecycle support.
Supply support for IDB30E60ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.
IDB30E60ATMA1 belongs to Infineon's EmCon diode product line, engineered specifically for high-frequency, high-efficiency PFC and soft-switching applications in industrial and renewable energy systems.
FAQ
Is IDB30E60ATMA1 suitable for paralleling in high-current PFC designs?
Yes. Its EmCon technology ensures matched dynamic parameters (trr, Qrr, S) across units and temperature, enabling stable current sharing without external balancing components. Derating to 25 A per device is recommended for >100 kHz operation with natural convection cooling.
What is the maximum allowable case temperature for continuous 30 A operation?
The datasheet specifies IF = 30 A at TC = 90 °C. Exceeding this requires linear derating: at TC = 100 °C, rated IF drops to ~28.5 A; at TC = 110 °C, it falls to ~26.2 A. Thermal design must maintain TC ≤ 90 °C under full load to sustain 30 A continuously.
Does Pin 1 (NC) require PCB routing or grounding?
No. Pin 1 is electrically isolated and must remain unconnected on the PCB. Routing or grounding it may introduce parasitic capacitance or unintended coupling paths, degrading EMI performance and potentially causing instability in high-di/dt layouts.
How does IDB30E60ATMA1 perform at elevated junction temperatures?
At Tj = 150 °C, VF rises to 1.5 V (same as 25 °C), trr increases to 178 ns, Qrr to 2150 nC, and Irrm to 24 A. These shifts are fully characterized and accounted for in the datasheet curves-no unexpected degradation occurs up to 175 °C, supporting robust operation in sealed or high-ambient environments.
IDB30E60ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 52.3A
- Voltage - Forward (Vf) (Max) @ If:
- 2 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 126 ns
- Current - Reverse Leakage @ Vr:
- 50 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3-2
- Operating Temperature - Junction:
- -40°C ~ 175°C
IDB30E60ATMA1 FAQ
1.How can I place an order for IDB30E60ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDB30E60ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDB30E60ATMA1 reliable?
The price and inventory of IDB30E60ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB30E60ATMA1 is usually 5 days.
3.What payment methods are accepted for IDB30E60ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB30E60ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDB30E60ATMA1?
IDB30E60ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDB30E60ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDB30E60ATMA1?
For technical support, including IDB30E60ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB30E60ATMA1 requirements.
6.How does Aetrix verify that IDB30E60ATMA1 is sourced from the original manufacturer or authorized distributors?
All IDB30E60ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB30E60ATMA1 meets industry standards.
7.What is the process for return or replacement of IDB30E60ATMA1?
All IDB30E60ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDB30E60ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDB30E60ATMA1 part is unused and in its original packaging.
Return procedure for IDB30E60ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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