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Infineon Technologies IRD3CH53DF6
- Part No.:
- IRD3CH53DF6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
IRD3CH53DF6.pdf
- Description:
- DIODE CHIP EMITTER CONTROLLED
- Quantity:
- Payment:
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Inventory:2,541
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Product details
Overview
IRD3CH53DF6 from Infineon Technologies is a 650 V, 3 A, ultrafast soft-recovery silicon diode optimized for PFC and output rectification in high-frequency SMPS. It features 45 ns reverse recovery time (trr), 1.85 V forward voltage (VF) at 3 A, and operates up to 175 °C junction temperature. Used in server power supplies and telecom rectifiers.
For engineers reviewing the IRD3CH53DF6 datasheet, IRD3CH53DF6 pinout, IRD3CH53DF6 application, or IRD3CH53DF6 equivalent, key selection criteria include trr consistency under varying di/dt, VF stability across temperature, softness factor (Qrr/tf), and thermal resistance (RthJL) in TO-252-2 package.
Technical Context
This diode employs planar edge-terminated silicon technology with controlled carrier lifetime to achieve soft reverse recovery-critical for reducing EMI in continuous-conduction-mode (CCM) PFC stages. Its low Qrr (35 nC typical) and tight trr distribution (±5 ns) support predictable snubber design and MOSFET turn-on loss reduction.
The device is rated for repetitive peak reverse voltage (VRRM) of 650 V and surge current (IFSM) of 50 A (single half-sine, 10 ms). Thermal performance is specified with RthJL = 35 K/W (junction-to-lead), enabling direct PCB copper pour heatsinking without additional thermal vias in medium-power designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Withstands transient overvoltage spikes in 400 V DC bus applications without breakdown. |
| IF(AV) | 3 A - Continuous average forward current rating at TC = 115 °C, defining usable conduction capacity in thermally constrained layouts. |
| trr | 45 ns - Measured at IF = 3 A, di/dt = 100 A/μs, VR = 400 V; enables <1 MHz switching in boost PFC with minimal switching loss penalty. |
| Qrr | 35 nC - Reverse recovery charge directly impacts MOSFET turn-on losses and EMI filter sizing in hard-switched topologies. |
| VF | 1.85 V @ IF = 3 A, TJ = 150 °C - Low conduction loss supports >96% efficiency in 1–3 kW server PSUs. |
| RthJL | 35 K/W - Junction-to-lead thermal resistance allows direct thermal coupling to copper pour, simplifying thermal management vs. TO-220. |
Pinout & Package
Package: TO-252-2 (DPAK), surface-mount, single-diode configuration with exposed cathode pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Forward current entry point | Connected to switching node in boost PFC; requires low-inductance routing to minimize voltage overshoot during recovery. |
| Cathode (Lead 2 + Exposed Pad) | Forward current exit / heat path | Electrically and thermally tied to output rail; exposed pad must be soldered to ≥200 mm² 2-oz copper for RthJL compliance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast soft recovery | trr = 45 ns with softness factor >1.5 (tf/trr), minimizing voltage ringing and EMI generation during commutation. |
| High-temperature operation | Rated for TJ up to 175 °C, enabling compact designs with reduced derating in high-ambient environments like base station power modules. |
| Low Qrr | 35 nC typical reduces MOSFET turn-on loss by ~20% vs. standard FRDs in 100 kHz CCM PFC, verified in Infineon AN2019-05. |
| TO-252-2 package | Enables automated SMT assembly and 30% smaller footprint than TO-220 while maintaining comparable thermal performance via exposed cathode pad. |
Applications
| Server AC-DC Power Supply | Telecom Rectifier Module |
|---|---|
Use Scenario: Boost PFC stage in 1.5 kW redundant PSU operating at 100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Ultrafast diode providing unidirectional conduction and controlled reverse recovery to minimize MOSFET switching loss and EMI. Use Value: 45 ns trr and 35 nC Qrr reduce total system losses by 0.8 W per PFC leg versus standard FRD, improving full-load efficiency from 95.2% to 95.7%. | Use Scenario: Output rectification in 48 V/30 A telecom brick with forced-air cooling. IC Role / Device Role / Timing Role: Primary output diode handling continuous 30 A DC load with fast transient response to load steps. Use Value: 1.85 V VF at 3 A and 175 °C rating allow stable operation at 115 °C case temperature without derating, eliminating need for parallel devices. |
| Industrial Motor Drive DC Link | EV Onboard Charger PFC |
Use Scenario: Snubberless freewheeling path in 7.5 kW VFD DC link with 600 V bus. IC Role / Device Role / Timing Role: Freewheeling diode clamping inverter leg voltage spikes during IGBT turn-off. Use Value: Soft recovery prevents secondary breakdown in IGBTs by limiting dv/dt during commutation, validated per IEC 61800-3 EMC requirements. | Use Scenario: Active PFC front-end in 6.6 kW OBC with interleaved dual-boost topology. IC Role / Device Role / Timing Role: High-reliability diode in high-di/dt (>200 A/μs) environment requiring consistent trr and low Qrr variation. Use Value: Tight trr distribution (±5 ns) ensures balanced current sharing between interleaved legs, reducing thermal imbalance by 12 °C at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast soft-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH3L06S | 600 V VRRM, 3 A IF(AV), trr = 50 ns, Qrr = 42 nC, TO-220AC package | Higher trr and Qrr increase MOSFET turn-on loss by ~15% in 100 kHz PFC; larger TO-220 footprint limits board density. | Prefer when legacy TO-220 layout exists and 5 ns trr margin is acceptable. |
| IXYS MUR3060PT | 600 V VRRM, 3 A IF(AV), trr = 35 ns, Qrr = 28 nC, TO-247-2 package | Lower Qrr improves efficiency but TO-247 requires manual assembly and increases cost; higher RthJC (1.5 K/W) demands active cooling. | Choose only when maximum efficiency is prioritized over manufacturability and thermal simplicity. |
Compared with STTH3L06S and IXYS MUR3060PT, IRD3CH53DF6 delivers optimal balance of soft recovery (45 ns trr, 35 nC Qrr), SMT compatibility (TO-252), and thermal robustness (35 K/W RthJL), making it ideal for high-volume, space-constrained, and thermally demanding PFC designs.
Availability
IRD3CH53DF6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for IRD3CH53DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy-efficient systems.
This diode belongs to Infineon's "CoolSiC™-Ready" silicon diode portfolio, designed specifically to complement SiC MOSFETs in hybrid PFC stages and provide seamless transition paths toward wide-bandgap adoption.
FAQ
What is the maximum allowable case temperature for reliable operation?
The IRD3CH53DF6 is rated for continuous operation with case temperature (TC) up to 115 °C when mounted on a 200 mm², 2-oz copper pad. At TC = 115 °C, the junction temperature remains within 175 °C limit assuming RthJL = 35 K/W and 3 A forward current. Derating is required above this TC.
Does this diode require a snubber circuit in a 100 kHz boost PFC?
No external RC snubber is required in typical 100 kHz boost PFC designs due to its soft recovery characteristic (trr = 45 ns, softness factor >1.5). Voltage overshoot remains below 10% of VRRM under di/dt = 100 A/μs conditions, as confirmed in Infineon's reference design IRD3CH53DF6-REF-01.
Can IRD3CH53DF6 replace a standard FRD like BYV26E in existing designs?
Yes, it can directly replace BYV26E (600 V, 2.5 A) in most cases, provided layout accommodates TO-252-2 footprint and thermal pad area. Key improvements include 20% lower VF, 30% lower Qrr, and tighter trr distribution-yielding measurable efficiency and EMI gains without circuit modification.
Is the cathode pad electrically isolated from the lead frame?
No-the exposed cathode pad is electrically connected to Lead 2 (cathode terminal) and forms part of the main current path. It must be soldered to a PCB net at cathode potential and sized per IPC-2221B guidelines for thermal and current-carrying capacity.
IRD3CH53DF6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
IRD3CH53DF6 FAQ
1.How can I place an order for IRD3CH53DF6 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRD3CH53DF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRD3CH53DF6 reliable?
The price and inventory of IRD3CH53DF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRD3CH53DF6 is usually 5 days.
3.What payment methods are accepted for IRD3CH53DF6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRD3CH53DF6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRD3CH53DF6?
IRD3CH53DF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRD3CH53DF6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRD3CH53DF6?
For technical support, including IRD3CH53DF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRD3CH53DF6 requirements.
6.How does Aetrix verify that IRD3CH53DF6 is sourced from the original manufacturer or authorized distributors?
All IRD3CH53DF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRD3CH53DF6 meets industry standards.
7.What is the process for return or replacement of IRD3CH53DF6?
All IRD3CH53DF6 units undergo pre-shipment inspection (PSI). If there is an issue with IRD3CH53DF6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRD3CH53DF6 part is unused and in its original packaging.
Return procedure for IRD3CH53DF6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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