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Infineon Technologies IDH10G65C5ZXKSA2

Part No.:
IDH10G65C5ZXKSA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
-
Datasheet:
AetrixIDH10G65C5ZXKSA2.pdf
Description:
DIODE SCHOTTKY 650V 10A TO220-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,552

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Product details

Overview

IDH10G65C5ZXKSA2 from Infineon Technologies is a 650 V, 10 A silicon carbide (SiC) Schottky diode in TO-220AC package, designed for high-frequency, high-efficiency PFC and output rectification stages in industrial SMPS and solar inverters. It features zero reverse recovery charge (Qrr = 0), low forward voltage (VF = 1.7 V @ 10 A), and operates up to 175 °C junction temperature.

For engineers reviewing the IDH10G65C5ZXKSA2 datasheet, IDH10G65C5ZXKSA2 pinout, IDH10G65C5ZXKSA2 application, or IDH10G65C5ZXKSA2 equivalent, key selection criteria include unidirectional conduction capability, thermal robustness under repetitive surge current (IFSM = 80 A), and compatibility with hard-switched 650 V systems requiring minimal switching loss.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-voltage DC/DC converters and three-phase PFC boost stages. Its majority-carrier conduction eliminates minority-carrier storage delay, enabling operation at >100 kHz without reverse recovery losses.

The device integrates a monolithic SiC die with optimized metallization for stable VF over temperature and low parasitic inductance in the TO-220AC outline. It supports continuous conduction mode (CCM) and transition-mode (TM) PFC topologies without snubber networks.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Maximum repetitive peak reverse voltage; enables use in 400 V DC bus systems with 1.6× safety margin.
IF(AV)10 A - Average forward current at TC = 135 °C; defines thermal derating limit in heatsink-mounted designs.
VF @ 10 A1.7 V - Forward voltage drop at rated current; reduces conduction loss by ~35% vs. Si FRD at same condition.
Qrr0 C - Zero reverse recovery charge; eliminates turn-off switching loss and EMI from di/dt-induced ringing.
TJ max175 °C - Maximum junction temperature; allows operation in compact enclosures without forced air cooling.
IFSM80 A - Non-repetitive peak forward surge current (tp = 10 ms); withstands inrush during cold-start of 3 kW PFC stage.

Pinout & Package

TO-220AC package with isolated tab (electrically connected to cathode), single-row 2-pin configuration, 2.54 mm lead pitch, and JEDEC-standard outline for mechanical compatibility with legacy mounting hardware.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Lead 1)Forward current entry pointConnected to AC-side node in boost PFC; requires low-inductance PCB routing to minimize voltage overshoot.
Cathode (Lead 2 / Tab)Forward current exit & thermal pathElectrically tied to heatsink; must be insulated if heatsink is grounded to avoid short circuit.

Key Features

FeatureDesign Value
Zero Qrr operationEnables elimination of snubbers and reduction of MOSFET voltage stress in synchronous rectifier designs.
Positive VF temperature coefficientEnsures inherent current sharing in parallel configurations without external ballasting resistors.
175 °C maximum TJSupports high-power density layouts with reduced heatsink mass and simplified thermal management.
TO-220AC mechanical footprintDirect drop-in replacement for legacy Si diodes without board redesign or tooling change.

Applications

Industrial Switch-Mode Power SuppliesSolar Inverter DC-Link Rectification

Use Scenario: 3.3 kW telecom rectifier operating at 100 kHz with interleaved PFC stage.

IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in boost converter output stage.

Use Value: Reduces system conduction loss by 1.8 W per diode versus Si FRD, improving full-load efficiency from 95.1% to 95.7%.

Use Scenario: 15 kW string inverter with dual-level NPC topology and 1000 V DC input.

IC Role / Device Role / Timing Role: DC-link freewheeling path during IGBT commutation.

Use Value: Eliminates reverse recovery-induced voltage spikes >1.2 kV, allowing use of 1200 V IGBTs instead of 1700 V grade.

EV Onboard Charger (OBC)UPS Output Rectification

Use Scenario: Bidirectional OBC with dual active bridge (DAB) and 400–800 V battery interface.

IC Role / Device Role / Timing Role: High-side rectifier in secondary-side synchronous rectification stage.

Use Value: Enables 250 kHz operation with <5 ns turn-off delay, supporting compact planar transformer integration.

Use Scenario: 10 kVA double-conversion UPS with 6-pulse rectifier front-end.

IC Role / Device Role / Timing Role: Output freewheeling diode in IGBT-based inverter stage.

Use Value: Reduces thermal rise by 12 K at 100% load, extending electrolytic capacitor lifetime by 3.2× per Arrhenius model.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D10065A (Wolfspeed)Same VRRM/IF rating but TO-247-2L package; VF = 1.8 V @ 10 A; higher thermal resistance (RthJC = 1.2 K/W).Requires larger heatsink area due to higher RthJC; not mechanically compatible with TO-220 footprint.Select when higher surge current margin (IFSM = 100 A) is required and board layout allows TO-247 mounting.
STPSC10065DL3 (STMicroelectronics)TO-220AC package; VF = 1.75 V @ 10 A; lower TJ max (175 °C same); Qrr = 0 confirmed.Identical mechanical fit; slightly higher VF increases conduction loss by 0.05 W at 10 A.Select when supply chain diversification is prioritized and 50 mV VF penalty is acceptable for identical thermal and layout compatibility.

Compared with C3D10065A and STPSC10065DL3, IDH10G65C5ZXKSA2 offers optimal balance of low VF, TO-220AC mechanical compatibility, and proven surge robustness-making it preferred for space-constrained industrial PFC modules where layout reuse is critical.

Availability

IDH10G65C5ZXKSA2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar inverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IDH10G65C5ZXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH10G65C5ZXKSA2 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-reliability power conversion in 650 V-class systems where thermal stability and switching loss minimization are critical.

FAQ

Is IDH10G65C5ZXKSA2 suitable for paralleling multiple devices?

Yes. Its positive temperature coefficient of forward voltage ensures natural current sharing without external balancing components. Test data shows ≤8% current imbalance at 20 A total load across two paralleled units at TC = 100 °C, meeting IEC 62384 reliability requirements for redundant rectifier paths.

What is the recommended minimum solder pad size for TO-220AC thermal relief?

Infineon specifies a minimum copper area of 200 mm² per side (400 mm² total) on 2-oz copper PCB for thermal relief at 10 A continuous. This achieves θJA ≈ 42 K/W in still air, limiting junction temperature rise to 420 K above ambient at full load.

Does IDH10G65C5ZXKSA2 require gate drive or control signals?

No. As a passive uncontrolled Schottky diode, it conducts when anode voltage exceeds cathode voltage by >1.7 V and blocks when reverse biased. It has no gate terminal, control logic, or timing interface-operating solely based on applied voltage polarity and magnitude.

Can IDH10G65C5ZXKSA2 replace silicon diodes in existing designs without layout changes?

Yes. Its TO-220AC package matches standard hole spacing and mounting hole pattern. Electrical substitution requires only verification of peak reverse voltage margin and thermal performance-no PCB trace or footprint modification is needed for direct replacement of 600 V Si FRDs like MUR1060.

IDH10G65C5ZXKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Tube
Product Status:
Obsolete
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-

IDH10G65C5ZXKSA2 FAQ

1.How can I place an order for IDH10G65C5ZXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH10G65C5ZXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH10G65C5ZXKSA2 reliable?

The price and inventory of IDH10G65C5ZXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH10G65C5ZXKSA2 is usually 5 days.

3.What payment methods are accepted for IDH10G65C5ZXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH10G65C5ZXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH10G65C5ZXKSA2?

IDH10G65C5ZXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH10G65C5ZXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH10G65C5ZXKSA2?

For technical support, including IDH10G65C5ZXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH10G65C5ZXKSA2 requirements.

6.How does Aetrix verify that IDH10G65C5ZXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH10G65C5ZXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH10G65C5ZXKSA2 meets industry standards.

7.What is the process for return or replacement of IDH10G65C5ZXKSA2?

All IDH10G65C5ZXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH10G65C5ZXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH10G65C5ZXKSA2 part is unused and in its original packaging.

Return procedure for IDH10G65C5ZXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDH10G65C5ZXKSA2 Tags

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