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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDB10S60CATMA2

Name: IDB10S60CATMA2
Brand: Infineon Technologies
SKU: IDB10S60CATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDB10S60CATMA2

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IDB10S60CATMA2.pdf

Description:: DIODE SIL CARB 600V 10A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,014

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Product details

Overview

IDB10S60CATMA2 from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide Schottky diode rated for 600 V DC blocking voltage, 10 A continuous forward current, and 76 A non-repetitive surge current. It operates with zero reverse recovery charge (Q_c = 24 nC), exhibits no temperature dependence on switching behavior, and is qualified per JEDEC standards for CCM PFC and motor drive applications.

For engineers reviewing the IDB10S60CATMA2 datasheet, IDB10S60CATMA2 pinout, IDB10S60CATMA2 application, or IDB10S60CATMA2 equivalent, key selection criteria include its 1.5–2.1 V forward voltage range across 25–150 °C, 50 V/ns dv/dt ruggedness, 1.8 K/W junction-to-case thermal resistance, and D2PAK (PG-TO263-3-2) surface-mount package compatibility with high-power thermal management.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency power conversion stages. Its unipolar conduction eliminates minority carrier storage, resulting in <10 ns capacitive switching time (t_c) and no trr-enabling operation at elevated temperatures without performance degradation.

The device delivers stable 600 V V_RRM with only 1.4 µA typical reverse leakage at 25 °C and 5 µA at 150 °C, while maintaining low 480 pF capacitance at 1 V reverse bias and 60 pF at 300 V/600 V. Its 29 A²s i²t rating supports robust short-circuit handling in industrial inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - Sustains full-rated DC bus voltage in 400–600 V PFC and inverter stages without avalanche stress
I_F	10 A continuous - Supports 1–2 kW power levels in compact SMD designs with T_C < 135 °C
Q_c	24 nC - Enables near-zero switching loss in hard-switched totem-pole PFC topologies
R_thJC	1.8 K/W - Allows direct heatsink mounting via D2PAK tab for efficient thermal transfer in motor drives
t_c	<10 ns - Defines capacitive displacement current duration; independent of T_j, I_F, and di/dt
V_F @ 10 A / 150 °C	1.7–2.1 V - Maintains predictable conduction loss in high-temp industrial environments
dv/dt ruggedness	50 V/ns - Withstands steep voltage transients in SiC MOSFET half-bridges without false turn-on

Pinout & Package

Package: D2PAK (PG-TO263-3-2), surface-mount, isolated tab, RoHS-compliant lead plating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode	Electrically connected to cathode metallization; serves as primary thermal path to heatsink
Pin 2	Anode	Input terminal for forward current; bonded to SiC die anode region
Pin 3	Cathode	Secondary cathode connection; used for low-inductance return routing in high-di/dt layouts

Key Features

Feature	Design Value
No reverse recovery	Eliminates trr-related losses and EMI in >100 kHz switching converters
Temperature-stable switching	Capacitive switching time t_c remains constant from –55 °C to +175 °C
High dv/dt immunity	50 V/ns rating prevents spurious conduction during SiC gate driver transitions
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for automotive and industrial reflow and storage conditions
Low Q_c / C_j trade-off	24 nC Q_c with 60 pF C_j at 300 V enables optimized snubberless design

Applications

CCM Totem-Pole PFC

Industrial Motor Inverter

Use Scenario: 3.3–6.6 kW single-phase PFC stage operating at 100–300 kHz with SiC MOSFETs.

IC Role / Device Role / Timing Role: High-side freewheeling diode in bidirectional totem-pole bridge; handles 10 A RMS current with zero reverse recovery.

Use Value: Reduces system switching loss by >40% vs. Si FRD; enables smaller passive filtering due to clean current waveforms.

Use Scenario: 7.5–15 kW 3-phase VFD driving induction motors in HVAC and pump systems.

IC Role / Device Role / Timing Role: Anti-parallel diode across SiC half-bridge switches; clamps inductive kickback during PWM dead-time.

Use Value: Prevents shoot-through risk from delayed diode turn-off; sustains 76 A surge during motor stall events.

Solar Microinverter DC Link

EV Onboard Charger (OBC)

Use Scenario: 300–600 V DC link in 1–3 kW microinverters with interleaved boost stages.

IC Role / Device Role / Timing Role: Output rectifier in high-frequency LLC resonant converter; conducts 10 A average current at 150 °C junction.

Use Value: Maintains 1.7 V V_F at 150 °C-reducing conduction loss drift versus silicon alternatives.

Use Scenario: Bidirectional AC/DC and DC/DC stage in 6.6 kW OBC with GaN/SiC hybrid topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectification diode in phase-shifted full-bridge; blocks 600 V reverse during light-load ZVS.

Use Value: 60 pF capacitance at 600 V minimizes circulating current loss during soft-switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10060A (Wolfspeed)	Same 600 V / 10 A rating; 1.7 V V_F @ 10 A / 25 °C; 2.2 V @ 150 °C; R_thJC = 2.0 K/W	Higher V_F at elevated temperature increases conduction loss in thermally constrained OBC modules	Prefer IDB10S60CATMA2 where T_j exceeds 130 °C or thermal resistance budget is tight
STPSC1006D (STMicroelectronics)	600 V / 10 A; 1.6 V V_F @ 10 A / 25 °C; Q_c = 27 nC; R_thJC = 2.2 K/W	Higher Q_c and thermal resistance reduce efficiency in high-frequency PFC designs	Prefer IDB10S60CATMA2 for >200 kHz totem-pole PFC where Q_c and R_thJC dominate loss budget

Compared with C3D1006A and STPSC1006D, IDB10S60CATMA2 offers lower V_F at 150 °C and superior thermal resistance-critical for sustained high-power operation in space-constrained industrial and EV charging systems.

Availability

IDB10S60CATMA2 is available at Aetrix Electronics and suitable for CCM PFC, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IDB10S60CATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDB10S60CATMA2 belongs to Infineon's thinQ!™ 2G SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion in next-generation PFC, motor control, and EV infrastructure applications.

FAQ

Is IDB10S60CATMA2 pin-compatible with standard D2PAK silicon diodes?

Yes-IDB10S60CATMA2 uses the PG-TO263-3-2 (D2PAK) footprint with identical mechanical dimensions and solder pad layout as legacy silicon diodes. Pin 1 (tab) is cathode, Pin 2 is anode, Pin 3 is cathode-matching industry-standard D2PAK orientation for drop-in replacement in existing PCBs.

What is the maximum allowable case temperature during continuous operation?

The datasheet specifies I_F = 10 A is rated for T_C < 135 °C. Derating begins above this point; at T_C = 100 °C, the device supports 32 A repetitive peak forward current (I_F,RM). Thermal design must ensure the tab temperature does not exceed 135 °C under worst-case ambient and airflow conditions.

Does IDB10S60CATMA2 require a gate resistor or snubber network?

No-unlike silicon diodes, it has no reverse recovery charge and exhibits purely capacitive switching behavior. Snubbers are unnecessary in most topologies; however, a small RC snubber may be added across the diode if board-level parasitic ringing exceeds EMI limits at >10 MHz.

How is avalanche capability verified for this SiC diode?

All units undergo 100% avalanche testing at 5 mA for 5 ms under V_R = 600 V conditions per JEDEC JESD22-A106. This confirms robustness against transient overvoltage events without degradation-distinct from silicon diodes that rely on controlled avalanche breakdown.

IDB10S60CATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 10A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 140 µA @ 600 V

Capacitance @ Vr, F:: 480pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDB10S60CATMA2 FAQ

1.How can I place an order for IDB10S60CATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDB10S60CATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDB10S60CATMA2 reliable?

The price and inventory of IDB10S60CATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB10S60CATMA2 is usually 5 days.

3.What payment methods are accepted for IDB10S60CATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB10S60CATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDB10S60CATMA2?

IDB10S60CATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDB10S60CATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDB10S60CATMA2?

For technical support, including IDB10S60CATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB10S60CATMA2 requirements.

6.How does Aetrix verify that IDB10S60CATMA2 is sourced from the original manufacturer or authorized distributors?

All IDB10S60CATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB10S60CATMA2 meets industry standards.

7.What is the process for return or replacement of IDB10S60CATMA2?

All IDB10S60CATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDB10S60CATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDB10S60CATMA2 part is unused and in its original packaging.

Return procedure for IDB10S60CATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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