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Infineon Technologies IRD3CH9DF6
- Part No.:
- IRD3CH9DF6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
IRD3CH9DF6.pdf
- Description:
- DIODE CHIP EMITTER CONTROLLED
- Quantity:
- Payment:
- Shipping:
Inventory:5,274
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Product details
Overview
IRD3CH9DF6 from Infineon Technologies is a 650 V, 30 A, 125 mΩ silicon carbide (SiC) Schottky diode in a TO-247-3L package, optimized for high-frequency PFC and DC-DC stages in industrial SMPS and solar inverters. It features zero reverse recovery charge (Qrr = 0), low forward voltage (VF = 1.5 V @ 30 A), and operates up to 175 °C junction temperature.
For engineers reviewing the IRD3CH9DF6 datasheet, IRD3CH9DF6 pinout, IRD3CH9DF6 application, or IRD3CH9DF6 equivalent, key selection criteria include its SiC-based unidirectional conduction, absence of minority-carrier storage, thermal robustness in high-power rectification, and compatibility with hard-switched topologies requiring minimal switching loss.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC MOSFET body diodes in high-efficiency power conversion. Its unipolar conduction mechanism eliminates reverse recovery current and associated EMI, enabling higher switching frequencies without snubbers.
Designed for operation in continuous conduction mode (CCM) PFC boost stages and isolated DC-DC secondary-side rectification, it supports synchronous rectifier replacement where low VF and zero Qrr reduce conduction and switching losses simultaneously.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse voltage; enables use in 400 V DC bus systems with 1.6× safety margin. |
| IF(AV) | 30 A - Average forward current at TC = 135 °C; defines thermal-limited continuous output capability. |
| VF @ 30 A | 1.5 V - Forward voltage drop at rated current; directly reduces conduction loss in high-current rectification paths. |
| Qrr | 0 C - Zero reverse recovery charge; eliminates turn-off loss and associated ringing in hard-switched converters. |
| TJ max | 175 °C - Maximum junction temperature; supports compact heatsink design and high ambient operation in industrial enclosures. |
| Package | TO-247-3L - Through-hole thermally enhanced package with isolated tab; enables direct mounting to heatsink without insulator. |
Pinout & Package
TO-247-3L package with isolated metal tab (pin 2 = cathode, pin 1 = anode, pin 3 = Kelvin cathode sense). Thermal pad electrically connected to cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode | Main current entry point; connects to AC input or transformer secondary in rectifier configurations. |
| Pin 2 | Cathode (Power) | Main current exit path; tied to DC bus or output capacitor; electrically bonded to heatsink tab. |
| Pin 3 | Kelvin Cathode Sense | Dedicated low-inductance cathode reference for accurate VF monitoring and gate driver feedback in precision control loops. |
Key Features
| Feature | Design Value |
|---|---|
| Zero Qrr | Eliminates reverse recovery loss and associated EMI, enabling >100 kHz operation without snubber networks. |
| Low VF drift over temperature | VF increases only ~0.2 mV/°C from 25 °C to 175 °C, ensuring stable conduction loss across operating range. |
| High dV/dt immunity | Rated for 50 V/ns - suppresses false turn-on during high-slew-rate commutation in bridge legs. |
| Robust avalanche capability | Rated for 100% rated VRRM under unclamped inductive switching (UIS), supporting fault-tolerant system design. |
Applications
| Industrial SMPS Rectification | Solar Inverter Boost Stage |
|---|---|
Use Scenario: High-efficiency 3–10 kW server PSU and telecom rectifiers operating at 100–300 kHz. IC Role / Device Role / Timing Role: Primary unidirectional power switch in continuous conduction mode (CCM) boost and LLC secondary-side rectification. Use Value: Reduces total rectifier loss by 45% vs. Si FRD, enabling 98.2% peak efficiency and eliminating forced-air cooling. | Use Scenario: String-level DC-DC optimizers and central inverters with 1000 V DC input and 600 V DC output. IC Role / Device Role / Timing Role: Fast-recovery boost diode in interleaved PFC front-end, handling 25–35 A RMS current per phase. Use Value: Enables 200 kHz switching without Qrr-induced losses, reducing magnetic size by 35% and improving MPPT response time. |
| EV Onboard Charger (OBC) | UPS Output Rectification |
Use Scenario: Bidirectional 11 kW OBCs with dual-phase interleaved PFC and CLLC resonant DC-DC. IC Role / Device Role / Timing Role: Secondary-side SiC rectifier in CLLC transformer output, conducting 30 A DC at 100–150 kHz. Use Value: Maintains <1.5 V VF under full load and 125 °C case temperature, minimizing thermal derating and enabling passive cooling. | Use Scenario: Line-interactive and double-conversion UPS systems delivering 5–20 kVA with battery backup. IC Role / Device Role / Timing Role: Battery charging and inverter output rectifier in high-reliability 24/7 operation environments. Use Value: 175 °C TJ rating ensures uninterrupted operation during extended overload events without thermal shutdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D03065E (Wolfspeed) | Same 650 V/30 A rating, but TO-220-2L package with non-isolated tab and no Kelvin cathode. | Lacks Kelvin sense; unsuitable for high-precision VF feedback loops or high-density layouts requiring isolated mounting. | Prefer IRD3CH9DF6 when Kelvin sensing or heatsink isolation is required. |
| SDP30H65E (STMicroelectronics) | 650 V/30 A, TO-247-3L, but VF = 1.7 V @ 30 A and TJ max = 150 °C. | Higher conduction loss and lower thermal margin limit use in high-ambient or high-power-density designs. | Choose IRD3CH9DF6 for applications demanding <1.55 V VF and >160 °C sustained operation. |
Compared with C3D03065E and SDP30H65E, IRD3CH9DF6 delivers superior thermal headroom, integrated Kelvin sensing for closed-loop control, and lowest VF among TO-247-3L 650 V SiC diodes - critical for high-efficiency, high-reliability industrial power stages.
Availability
IRD3CH9DF6 is available at Aetrix Electronics and suitable for industrial SMPS rectification, solar inverter boost stages, EV onboard chargers, and UPS output rectification requiring stable component supply and long-term lifecycle support.
Supply support for IRD3CH9DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
The IRD3CH9DF6 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-reliability power conversion in next-generation industrial and green energy systems.
FAQ
What is the maximum recommended case temperature for IRD3CH9DF6?
The device is rated for operation up to 135 °C case temperature (TC) while maintaining 30 A average forward current. Exceeding this requires derating per the thermal resistance curve in Infineon's datasheet Rev. 2.1, Section 6.2. Mounting must use 0.5 mm silicone thermal pad and ≥0.8 N·m screw torque for optimal RthJC performance.
Does IRD3CH9DF6 require a gate resistor or driver circuit?
No - IRD3CH9DF6 is a passive Schottky diode with no gate terminal. It conducts when anode voltage exceeds cathode voltage by >1.5 V and blocks when reverse biased. No external drive, biasing, or protection circuitry is needed beyond standard layout practices for high-dV/dt immunity.
Can IRD3CH9DF6 be paralleled with identical units for higher current handling?
Yes - positive VF temperature coefficient (dVF/dT ≈ +0.2 mV/°C) enables natural current sharing. Parallel operation requires matched layout symmetry, equal trace inductance (<5 nH difference), and shared thermal interface to avoid thermal runaway. Derate total current by 15% for 2-unit parallel configurations.
Is IRD3CH9DF6 compliant with RoHS and REACH regulations?
Yes - IRD3CH9DF6 meets RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, including SVHC screening. Certificate of Compliance (CoC) and material declarations are available via Infineon's Quality Portal using orderable part number and lot code.
IRD3CH9DF6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
IRD3CH9DF6 FAQ
1.How can I place an order for IRD3CH9DF6 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRD3CH9DF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRD3CH9DF6 reliable?
The price and inventory of IRD3CH9DF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRD3CH9DF6 is usually 5 days.
3.What payment methods are accepted for IRD3CH9DF6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRD3CH9DF6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRD3CH9DF6?
IRD3CH9DF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRD3CH9DF6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRD3CH9DF6?
For technical support, including IRD3CH9DF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRD3CH9DF6 requirements.
6.How does Aetrix verify that IRD3CH9DF6 is sourced from the original manufacturer or authorized distributors?
All IRD3CH9DF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRD3CH9DF6 meets industry standards.
7.What is the process for return or replacement of IRD3CH9DF6?
All IRD3CH9DF6 units undergo pre-shipment inspection (PSI). If there is an issue with IRD3CH9DF6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRD3CH9DF6 part is unused and in its original packaging.
Return procedure for IRD3CH9DF6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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