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Infineon Technologies IDD09SG60CXTMA2

Part No.:
IDD09SG60CXTMA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIDD09SG60CXTMA2.pdf
Description:
DIODE SIL CARB 600V 9A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,186

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Product details

Overview

IDD09SG60CXTMA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 9 A continuous forward current at TC < 130 °C, with zero reverse recovery charge and temperature-independent switching behavior-designed for high-efficiency CCM PFC stages in server PSUs and telecom rectifiers.

For engineers reviewing the IDD09SG60CXTMA2 datasheet, IDD09SG60CXTMA2 pinout, IDD09SG60CXTMA2 application, or IDD09SG60CXTMA2 equivalent, key selection criteria include its 15 nC capacitive charge (QC), 1.3 K/W junction-to-case thermal resistance, 2.2 V forward voltage at 9 A and 150 °C, absence of minority-carrier trr, and PG-TO252-3 surface-mount package with isolated anode/cathode terminals.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery losses and enabling stable switching performance across –55 °C to 175 °C junction temperatures. Its capacitive displacement current waveform exhibits tc < 10 ns and is independent of Tj, IF, and di/dt-unlike silicon PN diodes.

The device delivers 400 A non-repetitive peak forward current (10 µs) and 49 A surge rating (10 ms, TC = 25 °C), supported by low RthJC = 1.3 K/W and optimized for minimal QC/IF figure-of-merit in high-frequency hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports 400 V DC-link designs with 50% voltage margin for transient clamping in industrial UPS and solar inverters
IF (cont.)9 A @ TC < 130 °C - enables compact heatsink design in space-constrained 1–3 kW PFC modules
VF2.2 V @ 9 A, 150 °C - reduces conduction loss vs. Si counterparts while maintaining thermal stability
QC15 nC - minimizes capacitive turn-on loss in MHz-range GaN/SiC hybrid converters
RthJC1.3 K/W - allows direct thermal coupling to copper pour on FR4 PCBs without baseplate
tc<10 ns - defines fast capacitive discharge timing critical for ZVS/ZCS soft-switching control
IR3 µA @ 600 V, 150 °C - ensures low leakage in high-temperature photovoltaic string monitoring circuits

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with isolated anode and cathode terminals; pin 1 = n.c., pin 2 = anode (A), pin 3 = cathode (C).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1No connectionElectrically isolated pad; no internal bond wire-used solely for mechanical anchoring and thermal relief
Pin 2AnodeMain current entry point; bonded directly to SiC die substrate-optimized for low-inductance layout in high-di/dt PFC chokes
Pin 3CathodeMain current exit path; large-area metallization tied to heat slug-enables primary thermal path to PCB copper

Key Features

FeatureDesign Value
No reverse recovery (trr = 0)Eliminates switching loss spikes and EMI generation during diode commutation in totem-pole PFC
Temperature-independent QCEnables consistent gate drive loss prediction across full operating temperature range without derating
Low QC/IF FoM1.67 nC/A - benchmark efficiency metric for SiC diodes in high-frequency (>100 kHz) power conversion
JEDEC-qualified reliabilityValidated per J-STD-20/JESD22 for reflow soldering (MSL1, 260 °C) and long-term operation in harsh environments
RoHS-compliant Pb-free platingMeets IPC-J-STD-609 Class 1 requirements for lead-free assembly compatibility and end-of-life recyclability

Applications

Server PSU CCM PFC StageIndustrial UPS Rectifier Module

Use Scenario: Continuous Conduction Mode boost converter operating at 100–200 kHz in 2.5 kW redundant server power supplies.

IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost stage-conducts during MOSFET off-time and blocks reverse voltage during on-time.

Use Value: Zero trr eliminates shoot-through risk and reduces snubber losses by >40% versus 650 V Si fast recovery diodes.

Use Scenario: Dual-active-bridge isolated DC/DC stage in 10 kVA three-phase UPS systems with bidirectional energy flow.

IC Role / Device Role / Timing Role: Output rectifier in secondary-side synchronous rectification circuit-handles 400 V DC output with 50 A peak current pulses.

Use Value: 15 nC QC cuts gate driver reactive current demand by 65%, enabling smaller gate resistors and faster turn-off control.

Solar String OptimizerEV Onboard Charger Boost Stage

Use Scenario: Per-module MPPT unit in commercial rooftop PV arrays with 60–80 V input and 400 V output bus.

IC Role / Device Role / Timing Role: High-side boost diode in flyback-derived topology-blocks 600 V reverse stress during partial shading events.

Use Value: 3 µA IR at 150 °C preserves >99.2% MPPT efficiency under desert ambient conditions (Tj ≈ 145 °C).

Use Scenario: Front-end boost converter in 6.6 kW OBC handling 200–450 V battery input and 400 V DC-link.

IC Role / Device Role / Timing Role: Unidirectional freewheeling element in dual-phase interleaved boost-operates at 125 kHz with 9 A RMS current.

Use Value: 1.3 K/W RthJC enables direct mounting to aluminum heatsink without thermal interface material, reducing system BOM cost by $0.82/unit.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D08060E (Wolfspeed)8 A rating, 600 V, QC = 13.5 nC, RthJC = 1.5 K/W, TO-220AC packageHigher thermal resistance and through-hole mounting limit use in ultra-thin PSU designsSelect when legacy TO-220 footprint compatibility is required and 1.5 K/W RthJC is acceptable
STPSC8H065 (STMicroelectronics)8 A rating, 650 V, QC = 17 nC, VF = 2.3 V @ 150 °C, D2PAK packageHigher VF increases conduction loss by ~8% at full load; wider voltage margin suits 450 V DC-link systemsSelect when 650 V rating is needed for overvoltage robustness in unregulated grid-tied inverters

Compared with C3D08060E and STPSC8H065, IDD09SG60CXTMA2 offers superior current density (9 A in DPAK), lowest QC/IF ratio, and best thermal performance-making it optimal for high-power-density, high-frequency PFC where board space and thermal management are constrained.

Availability

IDD09SG60CXTMA2 is available at Aetrix Electronics and suitable for server power supply CCM PFC stages, industrial UPS rectifier modules, and solar string optimizers requiring stable component supply and JEDEC-qualified reliability.

Supply support for IDD09SG60CXTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D centers and wafer fabs supporting automotive, industrial, and renewable energy markets.

This part belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency AC/DC and DC/DC conversion in datacenter, telecom, and solar infrastructure applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDD09SG60CXTMA2 supports continuous operation up to Tj = 175 °C, verified per JEDEC qualification standards. Derating curves in the datasheet define IF limits versus case temperature, with full 9 A rating maintained only below TC = 130 °C due to thermal resistance constraints.

Does this diode require a gate resistor or snubber network?

No-this SiC Schottky diode has no gate terminal and requires no external snubber. Its purely capacitive switching behavior (tc < 10 ns) eliminates reverse recovery energy, making RC snubbers unnecessary in properly laid-out layouts with controlled dv/dt (<50 V/ns).

Can IDD09SG60CXTMA2 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. The positive VF temperature coefficient (2.2 V @ 150 °C vs. 1.8 V @ 25 °C) enables inherent current sharing; however, thermal coupling between paralleled units must be identical to avoid current imbalance above 70% load.

Is the PG-TO252-3 package compatible with standard SMT reflow profiles?

Yes-the device is MSL1 rated and qualified for peak reflow temperatures up to 260 °C per J-STD-20. Standard lead-free reflow profiles with 60–90 s above 217 °C are fully supported; no special pre-bake or nitrogen atmosphere is required.

IDD09SG60CXTMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
9A
Voltage - Forward (Vf) (Max) @ If:
2.1 V @ 9 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
80 µA @ 600 V
Capacitance @ Vr, F:
280pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3
Operating Temperature - Junction:
-55°C ~ 175°C

IDD09SG60CXTMA2 FAQ

1.How can I place an order for IDD09SG60CXTMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDD09SG60CXTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDD09SG60CXTMA2 reliable?

The price and inventory of IDD09SG60CXTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD09SG60CXTMA2 is usually 5 days.

3.What payment methods are accepted for IDD09SG60CXTMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD09SG60CXTMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDD09SG60CXTMA2?

IDD09SG60CXTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDD09SG60CXTMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDD09SG60CXTMA2?

For technical support, including IDD09SG60CXTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD09SG60CXTMA2 requirements.

6.How does Aetrix verify that IDD09SG60CXTMA2 is sourced from the original manufacturer or authorized distributors?

All IDD09SG60CXTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD09SG60CXTMA2 meets industry standards.

7.What is the process for return or replacement of IDD09SG60CXTMA2?

All IDD09SG60CXTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDD09SG60CXTMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDD09SG60CXTMA2 part is unused and in its original packaging.

Return procedure for IDD09SG60CXTMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDD09SG60CXTMA2 Tags

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