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Infineon Technologies IDH09SG60CXKSA2

Part No.:
IDH09SG60CXKSA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixIDH09SG60CXKSA2.pdf
Description:
DIODE SIL CARB 600V 9A TO220-2-1
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,451

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Product details

Overview

IDH09SG60CXKSA2 from Infineon Technologies is a 3rd-generation silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 9 A continuous forward current at TC < 130 °C, featuring zero reverse recovery charge, <10 ns switching time, and 15 nC total capacitive charge. It serves as a high-efficiency freewheeling or boost diode in CCM PFC stages of industrial SMPS.

For engineers reviewing the IDH09SG60CXKSA2 datasheet, IDH09SG60CXKSA2 pinout, IDH09SG60CXKSA2 application, or IDH09SG60CXKSA2 equivalent, key selection criteria include its temperature-independent switching behavior, 1.3 K/W junction-to-case thermal resistance, surge capability up to 49 A (tp=10 ms), and RoHS-compliant Pb-free lead plating.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (trr) and no forward recovery voltage overshoot. Its capacitive switching mechanism yields a fixed tc < 10 ns independent of junction temperature, load current, or di/dt - unlike silicon PN diodes.

Thermal performance is defined by RthJC = 1.3 K/W and operation across –55 °C to +175 °C junction temperature. The device sustains 400 A non-repetitive peak forward current at tp = 10 µs and delivers 12 A²s ∫i²dt rating at TC = 25 °C for short-circuit robustness.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports 400 V DC-link designs with 50 % voltage margin for transient clamping in PFC and solar inverters
IF (cont)9 A @ TC < 130 °C - enables compact heatsink design in 1–2 kW power supplies without forced air
VF1.8–2.1 V @ 9 A, 25 °C - low conduction loss improves efficiency over Si diodes by ~0.5 % in CCM PFC
QC15 nC - reduces turn-off losses in hard-switched topologies; enables higher-frequency operation than Si alternatives
RthJC1.3 K/W - allows direct mounting to heatsink with minimal thermal interface resistance for reliable 175 °C operation
tc<10 ns - defines capacitive displacement current decay; eliminates reverse recovery-related EMI and snubber losses
IR0.7 µA @ 600 V, 25 °C - ultra-low leakage preserves efficiency in high-impedance gate drive or sensing circuits

Pinout & Package

PG-TO220-2 package with isolated metal tab; case (Pin 1) is cathode, lead (Pin 2) is anode. Mounting torque: 60 N·cm for M3/M3.5 screws. Soldering allowed only on leads ≥1.6 mm from case for 10 s at 260 °C.

Pin/TerminalCircuit RoleDesign Meaning
Case (Pin 1)CathodeElectrically connected to internal die cathode; serves as primary thermal path and must be electrically isolated from heatsink unless system ground reference permits
Lead (Pin 2)AnodeSingle wire-bonded anode terminal; designed for low-inductance PCB layout with short, wide copper pour to minimize switching loop area

Key Features

FeatureDesign Value
No reverse recoveryEliminates trr-related switching losses and EMI, enabling clean hard-switched operation without snubbers
Temperature-stable QC and VFCapacitive charge remains constant across –55 °C to +175 °C, ensuring predictable timing in thermal cycling environments
High dv/dt ruggedness50 V/ns rating prevents false triggering in high-di/dt motor drive or inverter half-bridges
JEDEC-qualified reliabilityQualified per J-STD-20 and JESD22 for automotive and industrial applications requiring long-term parametric stability
Low figure-of-merit QC/IF1.67 nC/A ratio confirms superior high-frequency efficiency vs. competing SiC diodes in same voltage class

Applications

Industrial SMPS CCM PFCSolar Inverter Boost Stage

Use Scenario: Continuous Conduction Mode Power Factor Correction stage in 1.5–2.5 kW server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Freewheeling diode in boost converter; conducts during MOSFET off-time with zero reverse recovery.

Use Value: Enables >98.5 % efficiency at full load by eliminating trr losses and reducing EMI filter size by 30 %.

Use Scenario: DC-DC boost stage in string-level photovoltaic inverters operating at 600–1000 V DC input.

IC Role / Device Role / Timing Role: High-voltage output rectifier; blocks 600 V while conducting up to 9 A average current under partial shading.

Use Value: Maintains stable VF across –40 °C to +85 °C ambient, avoiding efficiency drop in cold-climate installations.

UPS Output RectificationMotor Drive Freewheeling

Use Scenario: Output stage rectification in double-conversion online UPS systems with 400 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-efficiency UPS designs; handles bidirectional energy flow during battery charging.

Use Value: Reduces conduction loss by 0.4 W per diode vs. Si FRD, lowering thermal stress on 3U chassis cooling systems.

Use Scenario: Freewheeling path in IGBT-based 3-phase VFDs for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Clamps inductive kickback during IGBT turn-off; withstands 50 V/ns dv/dt transients without latch-up.

Use Value: Prevents shoot-through risk in high-speed PWM (20 kHz) drives due to absence of minority carrier storage delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D09060A (Wolfspeed)Same 600 V/9 A rating; 1.55 V VF @ 9 A, 25 °C; RthJC = 1.5 K/W; TO-220-2 packageSlightly higher VF increases conduction loss by ~0.15 W at full load; lower thermal conductivity requires larger heatsink footprintPrefer when legacy Wolfspeed qualification is mandated; verify layout clearance for higher VF-induced thermal gradient
STPSC9H06D (STMicroelectronics)600 V/9 A; 1.7 V VF @ 9 A, 25 °C; RthJC = 1.4 K/W; TO-220AC package with insulated tabLower VF improves light-load efficiency; insulated tab simplifies mechanical mounting but adds 0.2 K/W thermal penaltySelect for cost-sensitive industrial drives where 0.1 V VF reduction offsets insulation cost premium

Compared with C3D09060A and STPSC9H06D, IDH09SG60CXKSA2 offers the lowest combined QC/IF ratio (1.67) and tightest VF distribution (±0.15 V), making it optimal for high-frequency, thermally constrained PFC designs demanding consistent timing and minimal EMI.

Availability

IDH09SG60CXKSA2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, and UPS systems requiring stable component supply, JEDEC-qualified reliability, and high-temperature operational continuity.

Supply support for IDH09SG60CXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH09SG60CXKSA2 belongs to the thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency switching applications where zero reverse recovery and thermal stability are critical.

FAQ

Is IDH09SG60CXKSA2 suitable for synchronous rectification in LLC resonant converters?

No - this is a unidirectional Schottky diode with cathode-connected case; it lacks the gate control required for synchronous rectification. It functions as a passive freewheeling or boost diode only. For synchronous rectification, discrete MOSFETs or integrated SR controllers must be used instead.

What is the maximum allowable case temperature during continuous operation?

The absolute maximum case temperature is 130 °C for 9 A continuous forward current. Exceeding this derates IF linearly to 0 A at 175 °C junction temperature. Thermal design must maintain TC ≤ 130 °C using the specified 1.3 K/W RthJC and appropriate heatsink interface.

Does IDH09SG60CXKSA2 require a gate resistor or snubber network?

No - as a majority-carrier SiC Schottky diode, it has no gate and exhibits no reverse recovery. Snubbers are unnecessary unless parasitic oscillation occurs due to layout inductance; in such cases, a small RC dampener (<10 Ω + 100 pF) across anode–cathode may suppress ringing.

Can IDH09SG60CXKSA2 replace silicon fast recovery diodes in existing designs?

Yes - with layout review: its lower VF reduces conduction loss, but its faster switching demands shorter, lower-inductance traces to avoid voltage overshoot. Also verify that the existing heatsink accommodates the 1.3 K/W RthJC and that mounting torque (60 N·cm) matches screw specification.

IDH09SG60CXKSA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
9A
Voltage - Forward (Vf) (Max) @ If:
2.1 V @ 9 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
80 µA @ 600 V
Capacitance @ Vr, F:
280pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-1
Operating Temperature - Junction:
-55°C ~ 175°C

IDH09SG60CXKSA2 FAQ

1.How can I place an order for IDH09SG60CXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH09SG60CXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH09SG60CXKSA2 reliable?

The price and inventory of IDH09SG60CXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH09SG60CXKSA2 is usually 5 days.

3.What payment methods are accepted for IDH09SG60CXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH09SG60CXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH09SG60CXKSA2?

IDH09SG60CXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH09SG60CXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH09SG60CXKSA2?

For technical support, including IDH09SG60CXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH09SG60CXKSA2 requirements.

6.How does Aetrix verify that IDH09SG60CXKSA2 is sourced from the original manufacturer or authorized distributors?

All IDH09SG60CXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH09SG60CXKSA2 meets industry standards.

7.What is the process for return or replacement of IDH09SG60CXKSA2?

All IDH09SG60CXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH09SG60CXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH09SG60CXKSA2 part is unused and in its original packaging.

Return procedure for IDH09SG60CXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDH09SG60CXKSA2 Tags

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