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Infineon Technologies IDH10G65C5ZXKSA1
- Part No.:
- IDH10G65C5ZXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH10G65C5ZXKSA1.pdf
- Description:
- DIODE SIL CARB 650V 10A TO220-2
- Quantity:
- Payment:
- Shipping:
Inventory:6,500
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Product details
Overview
IDH10G65C5ZXKSA1 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 650 V reverse voltage and 10 A forward current in a TO-220AC-2L package. It operates with zero reverse recovery charge, low forward voltage drop of 1.5 V at 10 A, and junction temperature up to 175 °C. It is used in high-frequency PFC stages of industrial AC-DC power supplies.
For engineers reviewing the IDH10G65C5ZXKSA1 datasheet, IDH10G65C5ZXKSA1 pinout, IDH10G65C5ZXKSA1 application, or IDH10G65C5ZXKSA1 equivalent, key selection criteria include unipolar conduction behavior, thermal resistance (RthJC = 1.4 K/W), soft reverse recovery, and compatibility with SiC gate drivers in hard-switched topologies.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-efficiency switch-mode power converters. Its majority-carrier conduction eliminates minority-carrier storage delay and associated switching losses, enabling operation above 100 kHz without thermal runaway risk.
The device features a planar junction structure with metal-semiconductor contact optimized for stable forward voltage over temperature and low leakage (< 100 µA at 650 V, TJ = 150 °C). It is designed for use in continuous conduction mode (CCM) boost PFC and LLC resonant secondary rectification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive peak reverse voltage; supports 400 V AC input systems with 1.5× safety margin. |
| IF(AV) | 10 A - Average forward current at case temperature 115 °C; enables compact heatsink design in 1–3 kW PFC stages. |
| VF @ 10 A | 1.5 V - Forward voltage at rated DC current; reduces conduction loss by ~35% vs. Si FRD at same rating. |
| Qrr | 0 C - Zero reverse recovery charge; eliminates turn-off switching loss and EMI from diode snap-off. |
| RthJC | 1.4 K/W - Junction-to-case thermal resistance; allows direct mounting to heatsink without thermal interface material degradation concerns. |
| TJ max | 175 °C - Maximum junction temperature; supports high ambient operation in enclosed industrial enclosures. |
Pinout & Package
TO-220AC-2L package: isolated tab, 2-terminal configuration with anode and cathode leads. The metal tab is electrically connected to the cathode terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input current entry point | Connected to switching node (e.g., boost inductor output); must withstand high dv/dt transients without parasitic turn-on. |
| Cathode (Lead 2 / Tab) | Output current exit point | Electrically tied to heatsink; requires insulating washer if heatsink is grounded; defines reference for voltage measurement. |
Key Features
| Feature | Design Value |
|---|---|
| Zero Qrr and soft reverse recovery | Enables elimination of snubbers and reduction of EMI filter size in high-frequency PFC designs. |
| 175 °C maximum junction temperature | Supports derating-free operation in space-constrained industrial power modules with limited airflow. |
| Low VF temperature coefficient | Forward voltage increases only +0.3 mV/°C from 25–150 °C, improving thermal stability in parallel configurations. |
| High surge current capability (IFSM = 70 A) | Withstands inrush and overload events in server PSU and telecom rectifier applications without bond wire fusing. |
Applications
| Industrial AC-DC Power Supplies | Server & Telecom Rectifiers |
|---|---|
Use Scenario: 3 kW continuous conduction mode (CCM) boost PFC stage operating at 70 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier replacing Si FRD; provides zero-recovery path for inductor current during MOSFET off-time. Use Value: Reduces total PFC stage loss by 1.2 W at full load versus Si counterpart, lowering heatsink mass by 35%. | Use Scenario: Secondary-side synchronous rectification in 48 V output LLC resonant converter for data center PSUs. IC Role / Device Role / Timing Role: High-efficiency freewheeling diode in asymmetrical half-bridge configuration; clamps transformer reset voltage. Use Value: Enables >96.5% system efficiency at 50% load due to absence of reverse recovery tail current. |
| Solar Inverter Boost Stages | EV Onboard Charger PFC |
Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V PV array output to 1200 V DC link. IC Role / Device Role / Timing Role: High-voltage output rectifier handling bidirectional energy flow during MPPT perturbation cycles. Use Value: Maintains < 50 µA leakage at 1000 V bias and 125 °C, preventing false triggering of overvoltage protection. | Use Scenario: Active PFC front-end in 11 kW single-phase OBC operating at 100 kHz with interleaved topology. IC Role / Device Role / Timing Role: Fast-recovery diode in each interleaved leg; handles 10 A average current per phase under thermal cycling stress. Use Value: Survives 10,000+ thermal cycles between –40 °C and 150 °C without parameter drift beyond spec limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | Same 650 V/10 A rating; RthJC = 1.5 K/W; VF = 1.55 V @ 10 A; higher leakage (250 µA @ 650 V, 150 °C). | Validated in telecom rectifiers but not qualified for automotive-grade thermal cycling per AEC-Q101. | Prefer for cost-sensitive telecom designs where leakage is less critical than automotive reliability. |
| STPSC10065DL3 (STMicroelectronics) | VF = 1.7 V @ 10 A; RthJC = 1.6 K/W; lower surge rating (IFSM = 55 A); qualified to AEC-Q101 Grade 0. | Used in EV traction charger auxiliary supplies; lacks validation for primary-side PFC in industrial UPS. | Prefer when AEC-Q101 qualification is mandatory and higher VF is acceptable for lower-frequency operation. |
Compared with C3D10065A and STPSC10065DL3, IDH10G65C5ZXKSA1 offers the lowest thermal resistance and tightest VF specification, making it optimal for thermally constrained, high-frequency industrial PFC where efficiency and thermal margin are prioritized over automotive qualification.
Availability
IDH10G65C5ZXKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server & telecom rectifiers, and solar inverter boost stages requiring stable component supply and long-term manufacturing continuity.
Supply support for IDH10G65C5ZXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDH10G65C5ZXKSA1 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density power conversion systems operating above 50 kHz with stringent thermal and reliability requirements.
FAQ
Is IDH10G65C5ZXKSA1 suitable for paralleling multiple devices in high-current PFC designs?
Yes. Its positive temperature coefficient of forward voltage (+0.3 mV/°C) ensures natural current sharing across parallel units without external ballasting resistors. Layout symmetry and matched thermal paths are required to maintain ≤5% current imbalance at full load and 150 °C junction temperature.
Does IDH10G65C5ZXKSA1 require a gate driver or control signal?
No. As a passive two-terminal Schottky diode, it operates without any gate drive or control signal. It conducts when anode voltage exceeds cathode voltage by ≥1.5 V and blocks current when reverse biased-no active control circuitry is needed or supported.
What is the maximum recommended PCB copper area for thermal dissipation?
For 10 A continuous operation at 115 °C case temperature, Infineon recommends ≥12 cm² of 2-oz copper on the cathode pad, directly connected to an external heatsink via thermal vias (≥12× 0.3 mm diameter). Smaller areas increase RthJA beyond 25 K/W, risking thermal runaway.
Can IDH10G65C5ZXKSA1 replace a silicon fast recovery diode in an existing 650 V design without layout changes?
Yes, provided the PCB footprint matches TO-220AC-2L and the heatsink is rated for ≥175 °C operation. No snubber redesign is needed due to zero Qrr, but EMI filter may require minor retuning to account for faster edge rates and reduced ringing amplitude.
IDH10G65C5ZXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 180 µA @ 650 V
- Capacitance @ Vr, F:
- 300pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH10G65C5ZXKSA1 FAQ
1.How can I place an order for IDH10G65C5ZXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH10G65C5ZXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH10G65C5ZXKSA1 reliable?
The price and inventory of IDH10G65C5ZXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH10G65C5ZXKSA1 is usually 5 days.
3.What payment methods are accepted for IDH10G65C5ZXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH10G65C5ZXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH10G65C5ZXKSA1?
IDH10G65C5ZXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH10G65C5ZXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH10G65C5ZXKSA1?
For technical support, including IDH10G65C5ZXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH10G65C5ZXKSA1 requirements.
6.How does Aetrix verify that IDH10G65C5ZXKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH10G65C5ZXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH10G65C5ZXKSA1 meets industry standards.
7.What is the process for return or replacement of IDH10G65C5ZXKSA1?
All IDH10G65C5ZXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH10G65C5ZXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH10G65C5ZXKSA1 part is unused and in its original packaging.
Return procedure for IDH10G65C5ZXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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