Infineon Technologies IDH05SG60CXKSA2

Overview

IDH05SG60CXKSA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage, 5 A continuous forward current at T_C < 130 °C, and 6 nC total capacitive charge. It operates with zero reverse recovery, temperature-independent switching, and high surge capability-designed for CCM PFC stages in high-efficiency SMPS.

For engineers reviewing the IDH05SG60CXKSA2 datasheet, IDH05SG60CXKSA2 pinout, IDH05SG60CXKSA2 application, or IDH05SG60CXKSA2 equivalent, key selection criteria include its 2.7 K/W junction-to-case thermal resistance, 50 V/ns dv/dt ruggedness, 150 A non-repetitive peak forward current, and suitability for high-temperature motor drives and solar inverters.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (trr) and no forward recovery-enabling clean, predictable switching waveforms across -55 °C to 175 °C. Its capacitive displacement current time constant (t_c) is <10 ns and independent of junction temperature, load current, or di/dt.

The device uses a planar SiC junction structure optimized for low Q_C/I_F figure of merit and exhibits stable 15 pF capacitance at 600 V reverse bias (1 MHz), with reverse leakage remaining ≤350 µA at 150 °C and 600 V.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole TO-220 variant with 2 leads, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05060E and STPSC5H065, IDH05SG60CXKSA2 offers the lowest thermal resistance (2.7 K/W) and best dv/dt ruggedness (50 V/ns), making it optimal for thermally constrained, high-dV/dt environments like industrial motor drives and high-density PFC modules.

Availability

IDH05SG60CXKSA2 is available at Aetrix Electronics and suitable for CCM PFC rectifiers, solar inverter DC-link stages, and UPS output rectification requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IDH05SG60CXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy systems.

IDH05SG60CXKSA2 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in renewable energy and industrial motor control.

FAQ

What is the maximum junction temperature for continuous operation?

The IDH05SG60CXKSA2 supports continuous operation up to 175 °C junction temperature, with derated forward current (I_F) governed by case temperature limits: 5 A at T_C < 130 °C, dropping to 18 A surge at T_C = 150 °C for 10 ms pulses. Thermal design must maintain T_j ≤ 175 °C under worst-case ambient and power dissipation conditions.

Does this diode require a gate resistor or snubber network?

No gate resistor is needed since this is a passive diode-not a controlled device. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode-cathode is recommended in high-di/dt applications (>200 A/µs) to damp parasitic ringing caused by layout inductance interacting with its 15 pF capacitance at 600 V.

Can IDH05SG60CXKSA2 replace a standard silicon FRD in existing designs?

Yes, as a drop-in replacement in TO-220-2 footprint, but layout review is essential: reduced reverse recovery eliminates snubber losses but increases di/dt stress on gate drivers and layout; ensure PCB traces minimize inductance and that driver ICs tolerate higher dv/dt coupling. V_F is higher than Si FRDs, so conduction loss may increase slightly at low temperatures.

Is the metal tab electrically isolated from the cathode?

No-the metal tab is internally connected to Pin 1 (cathode) and is not electrically isolated. It must be mounted to a grounded or cathode-referenced heatsink. If isolation is required, a silicone thermal pad with dielectric strength ≥2 kV must be used, adding ~0.5 K/W to effective R_thJC.