Renesas R1LV1616HSA-5SI#B1

Overview

R1LV1616HSA-5SI#B1 from Renesas Electronics Corporation is a 16-Mbit asynchronous static RAM device designed for embedded systems requiring parallel SRAM expansion, battery-backed memory, deterministic random access, and wide-temperature operation. The device is organized as 1-Mword × 16-bit or 2-Mword × 8-bit and integrates embedded ECC for single-bit error correction inside the memory array.

As part of the Renesas R1LV1616HSA-I wide temperature range SRAM series, R1LV1616HSA-5SI#B1 combines 55 ns access time, 2.7 V to 3.6 V single-supply operation, low standby power, and a 48-pin TSOP package for high-density surface-mount memory designs. For engineers reviewing the R1LV1616HSA-5SI#B1 datasheet, R1LV1616HSA-5SI#B1 pinout, R1LV1616HSA-5SI#B1 application, or R1LV1616HSA-5SI#B1 equivalent, this device is commonly relevant to industrial controllers, data logging systems, battery backup memory circuits, communication equipment, and legacy embedded platforms using asynchronous SRAM buses.

Technical Context

In embedded memory systems, R1LV1616HSA-5SI#B1 typically operates as external volatile SRAM connected to an MCU, MPU, FPGA, ASIC, or system controller through a conventional asynchronous parallel bus. Read and write access is controlled by address inputs, data I/O pins, chip select, output enable, write enable, and byte select signals without requiring a clock or refresh cycle.

The device supports both 16-bit word access and 8-bit byte access. In word mode, I/O0 to I/O15 provide a 16-bit data path with upper-byte and lower-byte control through UB# and LB#. In byte mode, BYTE# and A-1 allow the same memory array to be accessed as a 2M × 8 SRAM, which gives board designers flexibility when supporting different processor bus widths or product variants.

R1LV1616HSA-5SI#B1 is especially useful where predictable access timing, low standby current, and simple control logic are more important than high-speed synchronous burst operation. The dual chip-select structure supports standby and battery-backup implementation, while the 2.7 V to 3.6 V supply range makes the device suitable for 3 V and 3.3 V embedded platforms.

Key Specifications

Pinout & Package

The R1LV1616HSA-5SI#B1 pinout is arranged for a 48-pin TSOP SRAM footprint and includes address inputs, bidirectional data pins, control signals, byte-lane selection, byte-mode control, power, ground, no-connect, and not-used pins.

For PCB design, address and data bus routing should maintain controlled length matching where needed by the host timing budget. VCC and VSS should be decoupled close to the package, and CS1#/CS2 control should be designed carefully when the SRAM is used in standby or battery-backup memory retention circuits.

Key Features

• 16-Mbit asynchronous SRAM with 1M × 16 and 2M × 8 organization support.
• 55 ns maximum access time for the R1LV1616HSA-5SI speed grade.
• Single 2.7 V to 3.6 V supply range for 3 V-class embedded memory systems.
• Embedded ECC supporting single-bit error correction inside the memory array.
• Completely static operation with no clock, refresh cycle, or timing strobe required.
• Common data input and output with three-state output support.
• Dual chip-select structure supporting standby and battery-backup operation.
• BYTE# and A-1 support x8 byte-mode operation.
• UB# and LB# support upper-byte and lower-byte access in 16-bit systems.
• -40°C to +85°C temperature range for industrial embedded environments.
• 48-pin TSOP package supports compact surface-mount memory PCB layouts.

Applications

Equivalent & Alternatives

When evaluating R1LV1616HSA-5SI#B1 equivalent devices, engineers should compare memory density, x8/x16 organization, access time, supply voltage, TSOP footprint, chip-select logic, byte-mode support, temperature grade, and lifecycle status.

Compared with a generic 16-Mbit asynchronous SRAM, R1LV1616HSA-5SI#B1 has specific requirements around dual chip select, x8/x16 organization, BYTE# and A-1 byte-mode support, 48-pin TSOP footprint, and Renesas replacement guidance. R1LV1616HSA-5SI#B1 vs RMLV1616AGSA-5U2#AA0 selection should focus on official replacement status, electrical compatibility, production qualification, and long-term supply support.

Quality

R1LV1616HSA-5SI#B1 should be sourced as original Renesas Electronics components through traceable and controlled supply channels. Quality verification procedures may include package inspection, top-mark validation, date-code review, solderability evaluation, electrical testing, memory read/write verification, and incoming inspection according to the needs of industrial or legacy-system production programs.

Because this device is an obsolete SRAM orderable part, procurement should pay close attention to storage conditions, moisture sensitivity handling, Pb-free status, tray condition, replacement-product planning, and lot traceability. For repair or long-term maintenance projects, verifying timing compatibility and PCB footprint details helps reduce manufacturing and field-service risk.

Availability

R1LV1616HSA-5SI#B1 available at Aetrix Electronics and suitable for industrial SRAM replacement, embedded memory expansion, battery-backed data retention, and legacy equipment maintenance programs requiring stable component supply and traceable sourcing support.

Supply support may include scheduled delivery planning, obsolete-part sourcing support, BOM continuity assistance, replacement-part review, traceable procurement management, and long-term availability support for OEM manufacturers, repair facilities, embedded-system developers, and industrial electronics production programs.

For production deployment, confirming package type, access time, supply voltage, temperature range, MSL level, lifecycle status, and replacement-product compatibility helps reduce procurement risk and improve manufacturing stability.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer supplying microcontrollers, microprocessors, analog ICs, power devices, memory products, interface ICs, and embedded system solutions for automotive, industrial, infrastructure, consumer, and communication applications.

The Renesas R1LV1616HSA-I SRAM family provides wide-temperature asynchronous memory products optimized for 3 V-class external memory buses, low standby power, battery-backup operation, and compact TSOP surface-mount implementation. R1LV1616HSA-5SI#B1 belongs to this SRAM family and is positioned for systems requiring 16-Mbit density with x8/x16 bus flexibility.

FAQ

What is R1LV1616HSA-5SI#B1 used for?

R1LV1616HSA-5SI#B1 is used for external asynchronous SRAM expansion, embedded working memory, data buffering, battery-backed memory, instrumentation storage, and legacy industrial equipment maintenance.

Where can I find the R1LV1616HSA-5SI#B1 datasheet download?

The R1LV1616HSA-5SI#B1 datasheet is available from Renesas Electronics and includes device description, feature list, ordering information, pin arrangement, pin description, operation tables, DC characteristics, AC timing, package information, and SRAM integration details.

What should be considered in R1LV1616HSA-5SI#B1 pinout design?

Pinout design should confirm the 48-pin TSOP footprint, address bus mapping, I/O bus width, BYTE# mode selection, UB#/LB# byte-lane control, CS1#/CS2 logic, decoupling placement, and NU pin handling according to the datasheet.

Does R1LV1616HSA-5SI#B1 support both 8-bit and 16-bit operation?

Yes. R1LV1616HSA-5SI#B1 supports 1M × 16-bit word organization and 2M × 8-bit byte organization. BYTE# and A-1 are used for x8 mode support.

What is the recommended replacement for R1LV1616HSA-5SI#B1?

Renesas lists RMLV1616AGSA-5U2#AA0 as the replacement product for R1LV1616HSA-5SI#B1. Engineers should still verify electrical timing, pinout, package, qualification, and supply status before using it as a substitute.