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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRLU7843PBF MOSFET N-CH 30V 161A IPAK Infineon Technologies	2,690	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	161A (Tc)	4.5V, 10V	3.3mOhm @ 15A, 10V	2.3V @ 250µA	50 nC @ 4.5 V	±20V	4380 pF @ 15 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IPD60R800CEATMA1 MOSFET N-CH 600V 5.6A TO252-3 Infineon Technologies	8,674	RFQ	Datasheet	CoolMOS™ CE	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	600 V	5.6A (Tc)	10V	800mOhm @ 2A, 10V	3.5V @ 170µA	17.2 nC @ 10 V	±20V	373 pF @ 100 V	-	48W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TO252-3
IRFZ34NLPBF MOSFET N-CH 55V 29A TO262 Infineon Technologies	5,433	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	29A (Tc)	10V	40mOhm @ 16A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	700 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IPP057N06N3GHKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	3,174	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	5.7mOhm @ 80A, 10V	4V @ 58µA	82 nC @ 10 V	±20V	6600 pF @ 30 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IPP052N06L3GHKSA1 MOSFET N-CH 60V 80A TO220-3 Infineon Technologies	4,212	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	80A (Tc)	4.5V, 10V	5mOhm @ 80A, 10V	2.2V @ 58µA	50 nC @ 4.5 V	±20V	8400 pF @ 30 V	-	115W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IRF7465 MOSFET N-CH 150V 1.9A 8SO Infineon Technologies	6,699	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	1.9A (Ta)	10V	280mOhm @ 1.14A, 10V	5.5V @ 250µA	15 nC @ 10 V	±30V	330 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7521D1 MOSFET N-CH 20V 2.4A MICRO8 Infineon Technologies	6,641	RFQ	Datasheet	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	2.4A (Ta)	2.7V, 4.5V	135mOhm @ 1.7A, 4.5V	700mV @ 250µA (Min)	8 nC @ 4.5 V	±12V	260 pF @ 15 V	Schottky Diode (Isolated)	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
IRF7523D1 MOSFET N-CH 30V 2.7A MICRO8 Infineon Technologies	4,669	RFQ	Datasheet	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	2.7A (Ta)	4.5V, 10V	130mOhm @ 1.7A, 10V	1V @ 250µA	12 nC @ 10 V	±20V	210 pF @ 25 V	Schottky Diode (Isolated)	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
IRF7241 MOSFET P-CH 40V 6.2A 8SO Infineon Technologies	9,422	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	40 V	6.2A (Ta)	4.5V, 10V	41mOhm @ 6.2A, 10V	3V @ 250µA	80 nC @ 10 V	±20V	3220 pF @ 25 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF7202TR MOSFET P-CH 20V 2.5A 8SO Infineon Technologies	7,103	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	2.5A (Tc)	4.5V, 10V	250mOhm @ 1A, 10V	3V @ 250µA	15 nC @ 10 V	±20V	270 pF @ 20 V	-	1.6W (Ta), 2.5W (Tc)	-	-	-	Surface Mount	8-SO

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