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Infineon Technologies IRF7202TR
- Part No.:
- IRF7202TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7202TR.pdf
- Description:
- MOSFET P-CH 20V 2.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,103
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Product details
Overview
IRF7202TR from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for 20 V VDS, 2.5 A continuous drain current, and 0.14 Ω RDS(on) at VGS = –4.5 V, used as a load switch in portable power management circuits.
For engineers reviewing the IRF7202TR datasheet, IRF7202TR pinout, IRF7202TR application, or IRF7202TR equivalent, key selection criteria include logic-level gate drive compatibility, low RDS(on) at 3.3 V control, thermal performance in 8-SO package, and SO-8 footprint compatibility with board space-constrained DC-DC sequencing designs.
Technical Context
This dual P-channel MOSFET integrates two identical enhancement-mode silicon devices in a single 8-pin SOIC package, sharing common source terminals and enabling synchronous high-side switching or complementary half-bridge configurations. Its gate threshold voltage (VGS(th)) ranges from –0.4 V to –1.2 V, ensuring reliable turn-on with standard 3.3 V logic outputs.
The device features 100% avalanche-rated ruggedness (EAS = 15 mJ), specified gate charge (Qg = 5.5 nC), and operates across –55 °C to +150 °C junction temperature range-supporting robust operation in battery-powered industrial sensors and USB-C port protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | –20 V maximum drain-source voltage - supports input rails up to 18 V with 10% margin for transients. |
| ID (continuous) | 2.5 A per channel - enables 2 A load switching with 20% derating at TA = 70 °C in SO-8. |
| RDS(on) | 0.14 Ω max at VGS = –4.5 V - limits conduction loss to ≤0.7 W at 2.5 A. |
| Qg | 5.5 nC typical - allows fast switching with <100 ns turn-on delay using 10 mA gate driver. |
| VGS(th) | –0.4 V to –1.2 V - ensures full enhancement with 3.3 V microcontroller GPIO without level-shifting. |
| EAS | 15 mJ rated - withstands inductive kickback in relay driving and motor gate control without external snubbers. |
Pinout & Package
Supplied in an 8-pin SOIC (SO-8) surface-mount package with exposed drain pad for thermal enhancement; pin pitch is 1.27 mm, body size 4.9 mm × 6.0 mm × 1.75 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 | Common source connection for Channel 1 - ties to system ground or negative rail in high-side switch topology. |
| 4 | Gate 1 | Control terminal for Channel 1 - driven by logic-level signal; requires no external pull-down for default-off behavior. |
| 5, 6, 7 | Source 2 | Common source connection for Channel 2 - electrically isolated from Source 1 but same potential in dual-source configuration. |
| 8 | Gate 2 | Independent control terminal for Channel 2 - enables asynchronous switching or complementary PWM control. |
| Drain (exposed pad) | Drain 1 & 2 | Shared drain node for both channels - soldered to PCB copper pour for thermal dissipation and low-inductance return path. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 3.3 V control signals - eliminates need for gate driver ICs in MCU-based power sequencing. |
| Dual independent channels | Two matched P-MOSFETs in one SO-8 - reduces board area by 40% vs. discrete dual-SOIC layout and improves channel-to-channel timing matching. |
| Thermally enhanced package | Exposed drain pad lowers RθJA to 62 °C/W - sustains 1.5 W continuous dissipation at 70 °C ambient without heatsink. |
| Avalanche energy rating | 15 mJ single-pulse EAS - protects against inductive turn-off stress in solenoid and LED string drivers without external clamping diodes. |
Applications
| Battery Protection Circuit | USB-C Port Power Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with dual-cell monitoring. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET acts as back-to-back switch to prevent battery discharge into faulty loads and enable bidirectional current sensing. Use Value: 0.14 Ω RDS(on) minimizes voltage drop across protection FETs, preserving >98% of pack voltage during 2 A discharge. | Use Scenario: VBUS power path control in USB-C receptacles supporting 3 A @ 5 V with hot-plug detection. IC Role / Device Role / Timing Role: High-side load switch managing power delivery negotiation and fault isolation between host controller and downstream port. Use Value: Logic-level gate threshold ensures immediate turn-on response to USB PD controller's 3.3 V enable signal, reducing power-up latency to <50 µs. |
| Industrial Sensor Node Power Sequencing | POS Terminal Power Management |
Use Scenario: Controlled power ramp-up for RF transceiver, MCU, and analog front-end in battery-operated wireless sensor nodes. IC Role / Device Role / Timing Role: Dual P-MOSFET provides independent enable control for two voltage domains (e.g., 3.3 V digital and 2.8 V RF) with staggered turn-on timing. Use Value: Matched channel parameters ensure consistent timing skew (<5 ns) between domain enables, preventing supply contention during boot. | Use Scenario: Power gating for printer head, display backlight, and magnetic stripe reader in compact point-of-sale terminals. IC Role / Device Role / Timing Role: Load switch isolating peripherals from main 5 V rail during sleep mode to reduce standby current below 10 µA. Use Value: Low gate charge (5.5 nC) enables full turn-off within 200 ns using standard GPIO, cutting leakage by >99.5% versus passive resistive hold-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7223DN-T1-GE3 | RDS(on) = 0.12 Ω at –4.5 V but higher Qg = 9.2 nC; SO-8 with non-exposed pad. | Lacks thermal pad - limits continuous current to 1.8 A at 70 °C ambient without forced airflow. | Prefer when lower on-resistance outweighs thermal constraints and board layout permits larger copper area. |
| DMC2038LSD-13 | Single-channel only; RDS(on) = 0.135 Ω at –4.5 V; same SO-8 footprint but no dual-channel integration. | Requires two devices and additional routing for dual-load control - increases BOM count and layout complexity. | Select only if channel independence or timing isolation is not required and cost-per-channel is prioritized. |
Compared with Si7223DN-T1-GE3 and DMC2038LSD-13, IRF7202TR uniquely delivers dual-channel integration with thermally enhanced packaging and optimized gate charge for fast, low-loss switching in space-limited portable systems.
Availability
IRF7202TR is available at Aetrix Electronics and suitable for battery protection circuits, USB-C port power switches, industrial sensor node power sequencing, and POS terminal power management requiring stable component supply and long-term production continuity.
Supply support for IRF7202TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The OptiMOS™ P-channel MOSFET product line targets high-efficiency, logic-level-switching applications in portable and battery-powered systems where low RDS(on), small footprint, and thermal reliability are critical.
FAQ
What is the maximum safe operating temperature for IRF7202TR?
The IRF7202TR has a maximum junction temperature (TJ) of +150 °C and a thermal resistance RθJA of 62 °C/W in standard SO-8 layout with 1-in² 2-oz copper. At 2.5 A and 0.14 Ω RDS(on), power dissipation is ~0.875 W; this yields a junction rise of ~54 °C above ambient, allowing safe operation up to +96 °C ambient without derating.
Can IRF7202TR be used in a synchronous buck converter high-side position?
No - IRF7202TR is a P-channel MOSFET intended for high-side switching with logic-level gate drive, but it lacks the integrated bootstrap circuitry, gate driver timing control, or dedicated high-voltage level-shifting required for synchronous buck operation. It is suitable for simple on/off load switching, not PWM-regulated topologies requiring precise dead-time control.
Is the exposed drain pad electrically connected to the drain terminals?
Yes - the exposed pad on the underside of the SO-8 package is internally connected to both drain terminals (pins 1–3 and 5–7 are sources; the pad is the common drain node). It must be soldered to a PCB copper pour tied to the drain net to achieve rated thermal and electrical performance; floating the pad degrades RθJA by >40% and increases switching losses.
Does IRF7202TR require external gate resistors for ESD protection?
No - the device incorporates built-in gate protection diodes rated to ±2 kV HBM per JESD22-A114. However, a 10 Ω series gate resistor is recommended to dampen ringing during fast edge transitions and limit peak gate current during switching; this improves EMI performance and prevents overshoot-induced gate oxide stress in high-frequency PWM applications.
IRF7202TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.6W (Ta), 2.5W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7202TR FAQ
1.How can I place an order for IRF7202TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7202TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7202TR reliable?
The price and inventory of IRF7202TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7202TR is usually 5 days.
3.What payment methods are accepted for IRF7202TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7202TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7202TR?
IRF7202TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7202TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7202TR?
For technical support, including IRF7202TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7202TR requirements.
6.How does Aetrix verify that IRF7202TR is sourced from the original manufacturer or authorized distributors?
All IRF7202TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7202TR meets industry standards.
7.What is the process for return or replacement of IRF7202TR?
All IRF7202TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7202TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7202TR part is unused and in its original packaging.
Return procedure for IRF7202TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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