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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7241

Name: IRF7241
Brand: Infineon Technologies
SKU: IRF7241
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7241

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7241.pdf

Description:: MOSFET P-CH 40V 6.2A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,422

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Product details

Overview

IRF7241 from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -40 V V_DS, 41 mΩ R_DS(on) at V_GS = -10 V and I_D = -6.2 A, with integrated body diode and -55 °C to +150 °C operating junction temperature range. It serves as a low-side load switch in battery-powered portable electronics and power management circuits.

For engineers reviewing the IRF7241 datasheet, IRF7241 pinout, IRF7241 application, or IRF7241 equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, pulsed drain current capability (-25 A), thermal resistance (R_θJA = 50 °C/W), and SO-8 surface-mount compatibility with standard PCB layout practices.

Technical Context

This device employs trench-gate technology to achieve ultra-low on-resistance per die area while maintaining rugged avalanche-rated operation. Its P-channel configuration enables simple high-side or low-side switching without level-shifting circuitry when used with negative gate control logic.

The integrated source-drain body diode exhibits V_SD = -1.2 V at I_S = -2.5 A and T_J = 25 °C, with reverse recovery time (t_rr) of 32–48 ns under specified di/dt conditions - critical for synchronous rectification and bidirectional current handling in DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage in off-state; defines safe operating range for 24 V and lower battery systems.
R_DS(on)	41 mΩ @ V_GS = -10 V, I_D = -6.2 A - Low conduction loss enabling <100 mW dissipation at 2 A continuous load.
I_D (25°C)	-6.2 A - Continuous drain current rating at ambient; supports compact power stages without forced cooling.
t_rr	32–48 ns - Fast body diode recovery enables efficient operation in synchronous buck topologies up to ~500 kHz.
R_θJA	50 °C/W - Thermal resistance from junction to ambient on 1 in² copper board; sets max power derating slope (20 mW/°C above 70 °C).
Q_g	53–80 nC - Total gate charge determines driver strength requirement; compatible with standard logic-level gate drivers.
V_GS(th)	-1.0 to -3.0 V - Gate threshold voltage range ensures reliable turn-on with -4.5 V supply in portable applications.

Pinout & Package

IRF7241 is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1, 2, 3, 4, 5, 6, 7 and source terminals on pins 5, 6, 7, 8, and gate on pin 3. The package supports high-current routing and thermal dissipation via bottom-side copper exposure.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7 (Drain)	Power Drain Node	Parallel-connected drain terminals reduce effective R_DS(on) and improve current sharing across multiple pins.
5, 6, 7, 8 (Source)	Power Source Return	Multi-pin source connection lowers source inductance and improves switching stability in high-di/dt loads.
3 (Gate)	Control Input	Single gate input with 53–80 nC total charge; requires low-impedance drive to minimize switching losses.
8 (Source)	Reference Terminal	Primary source reference for gate drive biasing; must be tied directly to PCB ground plane for stable operation.

Key Features

Feature	Design Value
Trench HEXFET® Technology	Enables 41 mΩ R_DS(on) in SO-8 footprint - 30% lower on-resistance than planar P-MOSFETs of same size.
Ultra-Low R_DS(on) at -4.5 V	70 mΩ @ V_GS = -4.5 V, I_D = -5.0 A - supports direct logic-level drive from 5 V microcontrollers.
Integrated Body Diode	V_SD = -1.2 V @ I_S = -2.5 A - enables freewheeling paths in H-bridge and buck converter designs without external diodes.
Lead-Free & RoHS Compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - suitable for standard reflow assembly without special baking.
Avalanche Rated	Specified for repetitive unclamped inductive switching - eliminates need for external snubbers in relay driving and motor control.

Applications

Portable Power Bank Switching

USB-C PD Load Switch

Use Scenario: Bidirectional current control between dual-cell Li-ion packs and USB-C output ports during charging and discharging cycles.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as low-side load switch with fast body diode recovery enabling synchronous reverse conduction.

Use Value: 41 mΩ R_DS(on) limits conduction loss to <200 mW at 2 A, extending runtime and reducing thermal stress in sealed enclosures.

Use Scenario: Inrush current limiting and hot-swap protection for USB-C Power Delivery sink applications requiring ±20 V gate tolerance.

IC Role / Device Role / Timing Role: High-reliability load switch with -20 V V_GS rating and -55 °C to +150 °C operation for automotive-grade USB-C accessories.

Use Value: Avalanche rating allows safe interruption of inductive loads during plug insertion, eliminating risk of gate oxide failure.

Laptop Battery Protection IC Interface

Industrial Sensor Node Power Gating

Use Scenario: Secondary overcurrent and short-circuit protection stage downstream of primary battery protection ICs in 3-cell laptop battery packs.

IC Role / Device Role / Timing Role: Fast-turnoff P-MOSFET controlled by dedicated protection ASIC with <210 ns turn-off delay.

Use Value: 25 A pulsed drain current handles momentary fault currents without latch-up, supporting UL2054-compliant shutdown response.

Use Scenario: Periodic power gating of wireless sensor modules (BLE/Zigbee) in battery-operated industrial monitoring nodes.

IC Role / Device Role / Timing Role: Low-quiescent-load power switch with <100 nA gate leakage ensuring >10-year shelf life in remote deployments.

Use Value: -100 nA gate-to-source reverse leakage at V_GS = 20 V minimizes standby current drain below 1 µA per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP	R_DS(on) = 38 mΩ @ -10 V but higher Q_g (90 nC); SO-8 with enhanced thermal pad.	Better thermal performance in high-duty-cycle DC-DC; less suitable for fast-switching due to higher gate charge.	Prefer for thermally constrained 24 V systems where gate drive strength exceeds 1 A peak.
DMG2307L	R_DS(on) = 60 mΩ @ -4.5 V; smaller SO-8 variant with no exposed drain pad.	Lower cost for space-constrained consumer devices; lacks avalanche rating and high-pulse-current capability.	Select only for non-critical 5 V logic-driven loads where fault robustness is secondary to BOM cost.

Compared with Si7157DP and DMG2307L, IRF7241 offers balanced trade-offs: lower gate charge than Si7157DP for faster switching, and superior avalanche ruggedness and pulse current rating versus DMG2307L - making it optimal for industrial-grade battery management where reliability and transient immunity are prioritized.

Availability

IRF7241 is available at Aetrix Electronics and suitable for portable power banks, USB-C PD load switching, and laptop battery protection circuits requiring stable component supply and long-term lifecycle support.

Supply support for IRF7241 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and intelligent power modules for industrial, automotive, and computing applications.

The HEXFET® product line was developed specifically for high-current, low-loss switching in battery-powered and energy-sensitive systems - emphasizing ruggedness, thermal efficiency, and gate-drive simplicity in surface-mount packages.

FAQ

What is the maximum safe operating voltage for IRF7241 in continuous DC operation?

The IRF7241 has a guaranteed V_DS rating of -40 V, meaning it can safely block up to 40 V in the off-state under continuous DC conditions. Operation beyond this voltage risks avalanche breakdown even with gate grounded. Derating is recommended for reliability in high-temperature environments or with voltage transients.

Can IRF7241 be driven directly by a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is -1.0 V to -3.0 V, but full enhancement requires ≥ -4.5 V for acceptable R_DS(on). At 3.3 V, the device remains weakly conducting (R_DS(on) > 200 mΩ), causing excessive heating. A level-shifter or dedicated gate driver is required for reliable 3.3 V logic interface.

Does IRF7241 require a gate resistor for typical switching applications?

Yes - a 10–47 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 190 pF) and PCB inductance. This prevents false turn-on during fast voltage transitions and reduces EMI in motor control or DC-DC converter layouts.

How does the body diode performance compare to discrete Schottky diodes in reverse recovery applications?

The IRF7241's body diode has t_rr = 32–48 ns and Q_rr = 45–68 nC, which is slower and higher-loss than most Schottky diodes (typically <10 ns, <10 nC). It is adequate for low-frequency freewheeling but not recommended for high-frequency synchronous rectification where Schottky or GaN alternatives offer superior efficiency.

IRF7241 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7241 FAQ

1.How can I place an order for IRF7241 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7241 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7241 reliable?

The price and inventory of IRF7241 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7241 is usually 5 days.

3.What payment methods are accepted for IRF7241?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7241 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7241?

IRF7241 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7241 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7241?

For technical support, including IRF7241 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7241 requirements.

6.How does Aetrix verify that IRF7241 is sourced from the original manufacturer or authorized distributors?

All IRF7241 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7241 meets industry standards.

7.What is the process for return or replacement of IRF7241?

All IRF7241 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7241, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7241 part is unused and in its original packaging.

Return procedure for IRF7241:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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