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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLU7843PBF

Name: IRLU7843PBF
Brand: Infineon Technologies
SKU: IRLU7843PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLU7843PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRLU7843PBF.pdf

Description:: MOSFET N-CH 30V 161A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:2,690

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Product details

Overview

IRLU7843PBF from Infineon Technologies is a 30V, 12A N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core voltage regulation and telecom DC-DC applications. It delivers 2.6 mΩ typical R_DS(on) at V_GS = 4.5V, 34 nC total gate charge, and fully characterized avalanche capability (1440 mJ E_AS), enabling efficient low-side switching in compact, high-efficiency power stages.

For engineers reviewing the IRLU7843PBF datasheet, IRLU7843PBF pinout, IRLU7843PBF application, or IRLU7843PBF equivalent, key selection criteria include its ultra-low gate impedance, body diode reverse recovery charge (Q_rr = 36–54 nC), junction-to-case thermal resistance (1.05 °C/W), and validated performance under clamped inductive switching at 125°C junction temperature.

Technical Context

This HEXFET device uses planar vertical DMOS technology with an integrated body diode optimized for synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.4–2.3 V) enables direct drive from 3.3V/5V controllers, while the low Q_gd/Q_gs1 ratio minimizes C_dv/dt turn-on risk in high-dV/dt switching nodes.

The MOSFET is characterized for linear derating above 25°C case temperature (0.95 W/°C), supports pulsed drain current up to 620 A, and maintains stable R_DS(on) across -55°C to +175°C operating range-critical for automotive-grade transient robustness and industrial thermal cycling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24V input rails and 12V output stages without derating.
R_DS(on) @ 4.5V	2.6 mΩ typ - Enables <1W conduction loss at 12A RMS in 12V/100A VRM designs.
Q_g	34 nC - Low gate charge reduces driver power and enables >1 MHz switching with standard gate drivers.
E_AS	1440 mJ - Single-pulse avalanche energy rating ensures reliability during load dump or short-circuit transients.
Q_rr	36–54 nC - Quantified reverse recovery charge enables accurate loss modeling in synchronous FET position.
R_θJC	1.05 °C/W - Enables direct heatsinking to PCB copper or external heatsink for 71W continuous dissipation at T_C = 100°C.
I_D @ 100°C	71 A - Continuous current rating at elevated case temperature supports high-power density board layouts.

Pinout & Package

IRLU7843PBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads and is lead-free (PbF) compliant per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-impedance return path for load current; tied to ground plane in low-side switch configuration.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <34 nC charge for full enhancement; sensitive to ESD and dV/dt coupling.
Pin 3 (Drain)	Power output	Exposed metal pad connected internally to drain; must be soldered to large copper area for thermal management and current conduction.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	2.6 mΩ typ - Enables use with 3.3V/5V PWM controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	1440 mJ E_AS - Eliminates need for external snubbers in hard-switched topologies with inductive loads.
Optimized body diode	Q_rr = 36–54 nC, t_rr = 39–59 ns - Minimizes shoot-through risk and commutation losses in synchronous rectification.
Thermally enhanced D-Pak	R_θJC = 1.05 °C/W - Supports >70W power handling with minimal heatsink area on 2oz copper PCB.

Applications

Server VRM Power Stage

Telecom 48V-to-12V DC-DC

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.5V @ up to 200A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase leg, switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 2.6 mΩ R_DS(on) at 4.5V reduces conduction loss by 35% vs. legacy 5V-gate devices, improving full-load efficiency by ≥1.2%.

Use Scenario: Isolated forward or active-clamp forward converter delivering 12V/30A for base station RF modules.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: 1440 mJ E_AS withstands reflected primary-side transients; Q_rr < 54 nC prevents cross-conduction during zero-voltage switching transitions.

Industrial PLC Power Supply

Automotive ADAS Camera Module

Use Scenario: Non-isolated buck converter powering 5V/3A logic and analog circuitry in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary low-side switch in 200 kHz fixed-frequency regulator with overcurrent protection.

Use Value: -55°C to +175°C T_J rating ensures operation in sealed enclosures; 620 A pulsed ID supports 10× overload fault clearing.

Use Scenario: Compact 12V-to-3.3V point-of-load regulator for image sensor and ISP in rear-view camera systems.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck FET operating in automotive ambient (-40°C to +105°C case).

Use Value: R_DS(on) drift <15% from 25°C to 125°C ensures stable efficiency across temperature; PbF compliance meets automotive RoHS requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7843PbF	Same die, I-Pak package; R_θJA = 110 °C/W (vs. 50 °C/W for D-Pak); higher thermal resistance limits power density.	Better suited for through-hole prototyping or lower-power (<30W) applications where manual assembly is preferred.	Select when mechanical mounting stability outweighs thermal performance, or when existing I-Pak footprint is locked.
SiR872DP-T1-GE3	30V, 12A TrenchFET; R_DS(on) = 2.9 mΩ @ 4.5V; Q_g = 29 nC; no published E_AS rating.	Lacks documented avalanche ruggedness; requires external clamping in inductive switching circuits.	Prefer for cost-sensitive consumer applications where transient stress is controlled by system-level design.

Compared with IRLU7843PBF, IRLR7843PbF trades thermal performance for mechanical robustness, while SiR872DP offers lower gate charge but no guaranteed avalanche capability-making IRLU7843PBF the optimal choice for unclamped inductive loads and high-reliability industrial power stages.

Availability

IRLU7843PBF is available at Aetrix Electronics and suitable for server VRM power stages, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRLU7843PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line was developed specifically for high-efficiency, high-frequency switching applications in computing, telecom, and industrial power conversion-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLU7843PBF supports 71 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for heat spreading and accounts for linear derating beyond 25°C at 0.95 W/°C.

Does this MOSFET require a gate resistor for safe operation in a 1 MHz buck converter?

Yes-a gate resistor (typically 2–10 Ω) is recommended to dampen ringing and limit peak gate current during fast switching. With 34 nC Q_g and typical driver rise times <20 ns, uncontrolled gate drive can cause overshoot exceeding ±20 V, risking gate oxide damage or spurious turn-on.

Can the body diode be used for freewheeling in non-synchronous designs?

Yes-the intrinsic body diode is rated for 161 A continuous source current and 620 A pulsed current, with V_SD ≤ 1.0 V at 12 A. However, its 39–59 ns reverse recovery time and 36–54 nC Q_rr make it less efficient than Schottky diodes in high-frequency freewheeling; synchronous operation is strongly preferred.

Is the D-Pak package suitable for reflow soldering per IPC-J-STD-020?

Yes-the IRLU7843PBF is qualified for lead-free reflow per JEDEC J-STD-020D, with peak temperature tolerance of 260°C for 10 seconds. The exposed drain pad must be stencil-printed with sufficient solder paste volume (≥120% coverage) to ensure void-free thermal interface and mechanical integrity.

IRLU7843PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 161A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4380 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRLU7843PBF FAQ

1.How can I place an order for IRLU7843PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLU7843PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLU7843PBF reliable?

The price and inventory of IRLU7843PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLU7843PBF is usually 5 days.

3.What payment methods are accepted for IRLU7843PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLU7843PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLU7843PBF?

IRLU7843PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLU7843PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLU7843PBF?

For technical support, including IRLU7843PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLU7843PBF requirements.

6.How does Aetrix verify that IRLU7843PBF is sourced from the original manufacturer or authorized distributors?

All IRLU7843PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLU7843PBF meets industry standards.

7.What is the process for return or replacement of IRLU7843PBF?

All IRLU7843PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLU7843PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLU7843PBF part is unused and in its original packaging.

Return procedure for IRLU7843PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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