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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP057N06N3GHKSA1

Name: IPP057N06N3GHKSA1
Brand: Infineon Technologies
SKU: IPP057N06N3GHKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP057N06N3GHKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP057N06N3GHKSA1.pdf

Description:: MOSFET N-CH 60V 80A TO220-3

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Product details

Overview

IPP057N06N3GHKSA1 from Infineon Technologies is a 60 V, 90 A, 5.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control stages with low gate charge (Q_g = 48 nC) and fast switching (t_on = 24 ns). It features avalanche-rated ruggedness, logic-level gate drive compatibility (V_GS(th) = 2.0–3.0 V), and qualified per AEC-Q101 for automotive-grade reliability.

For engineers reviewing the IPP057N06N3GHKSA1 datasheet, IPP057N06N3GHKSA1 pinout, IPP057N06N3GHKSA1 application, or IPP057N06N3GHKSA1 equivalent, key selection criteria include R_DS(on) at 10 V and 4.5 V, safe operating area (SOA) under pulsed conditions, thermal resistance (R_thJC = 0.9 K/W), and gate charge profile for hard-switched SMPS designs.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench gate structure. Its low Q_gd/Q_g ratio (0.17) enables stable operation in high-frequency synchronous buck converters up to 1 MHz.

The device supports unclamped inductive switching (UIS) with E_AS = 230 mJ at T_j = 25 °C and exhibits minimal R_DS(on) drift over temperature (±15% from −55 °C to 175 °C), enabling robust thermal design in engine control units and on-board chargers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V nominal bus systems with 20% margin for transients.
R_DS(on) @ V_GS = 10 V	5.7 mΩ - Enables <1.5 W conduction loss at 18 A RMS in 12 V input DC-DC stages.
I_D (continuous)	90 A - Rated at T_C = 25 °C; derates to 55 A at T_C = 100 °C per SOA curve.
Q_g	48 nC - Total gate charge; determines driver power requirement and switching speed in 300–500 kHz converters.
R_thJC	0.9 K/W - Junction-to-case thermal resistance; enables 110 W dissipation with 100 K ΔT to heatsink.
E_AS	230 mJ - Single-pulse avalanche energy; ensures survivability during load dump or short-circuit events in automotive ECUs.
V_GS(th)	2.0–3.0 V - Gate threshold voltage range; guarantees turn-on with 3.3 V logic-level controllers without level-shifting.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for channel current	Low-inductance connection point for PCB ground plane; ties directly to source of synchronous rectifier in buck topology.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 Ω series resistor to suppress ringing; referenced to source potential.
Pin 3 (Drain)	Main high-side current path	Electrically connected to metal tab; must be isolated from heatsink unless using insulating pad; carries full load current.

Key Features

Feature	Design Value
Avalanche-rated	Rated for repetitive unclamped inductive switching (UIS) per JEDEC JESD24-1; eliminates need for external snubbers in motor gate drivers.
Logic-level gate drive	V_GS(th) max = 3.0 V ensures full enhancement with 3.3 V microcontrollers-no gate driver IC required in low-power BLDC controllers.
Low Q_gd/Q_g ratio	0.17 - Reduces Miller-induced shoot-through risk and improves controllability in high-side configurations.
Thermally enhanced package	R_thJC = 0.9 K/W - Delivers >2× power density vs. standard TO-220 in thermally constrained engine bay modules.
AEC-Q101 qualified	Qualified for automotive applications including powertrain and body electronics; includes HTGB, HTRB, and temperature cycling validation.

Applications

Automotive Engine Control Unit (ECU)

Industrial 48 V DC-DC Converter

Use Scenario: High-side switch for fuel injector driver with 12 V supply and 10 A peak load.

IC Role / Device Role / Timing Role: Power switch controlling solenoid activation timing with <1 µs turn-off delay for precise injection phasing.

Use Value: Low R_DS(on) minimizes voltage drop across switch, preserving injector coil energy; avalanche rating absorbs back-EMF without clamp diodes.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for telecom power shelves.

IC Role / Device Role / Timing Role: High-efficiency power stage switch operating at 300 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 48 nC Q_g enables low-loss gate driving at high frequency; 5.7 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 8 mΩ devices.

On-Board Charger (OBC) Input Stage

Brushless DC Motor Inverter (3-Phase)

Use Scenario: Boost PFC switch in 3.3 kW single-phase OBC handling 230 V AC input.

IC Role / Device Role / Timing Role: Fast-switching high-current switch in continuous conduction mode (CCM) boost converter.

Use Value: 90 A I_D rating supports 15 A RMS input current; low Q_gd ensures clean turn-off during line-voltage zero-crossings.

Use Scenario: Half-bridge leg in 500 W e-bike motor controller with 24 V battery input.

IC Role / Device Role / Timing Role: Low-side switching element in 6-step commutation with 20 kHz PWM carrier.

Use Value: Logic-level V_GS(th) allows direct drive from MCU GPIO; R_DS(on) stability over −40 °C to 150 °C ensures torque consistency across ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB054N06N3 G	R_DS(on) = 5.4 mΩ @ 10 V; Q_g = 52 nC; same PG-TO220-3 package and 60 V rating.	Slightly lower conduction loss but higher gate drive energy; best suited where thermal headroom exceeds 5 W.	Select when minimizing I²R loss dominates over switching loss budget in <200 kHz designs.
STP90NF06L	R_DS(on) = 7.5 mΩ @ 10 V; Q_g = 85 nC; TO-220FP package with non-isolated tab.	Higher conduction and switching losses; lacks AEC-Q101 qualification and UIS rating.	Acceptable only in cost-sensitive industrial controls where automotive reliability and avalanche immunity are not required.

Compared with IPB054N06N3 G, IPP057N06N3GHKSA1 trades 0.3 mΩ higher R_DS(on) for 4 nC lower Q_g, improving efficiency in high-frequency SMPS; versus STP90NF06L, it delivers 24% lower conduction loss, 41% lower gate charge, and certified automotive ruggedness.

Availability

IPP057N06N3GHKSA1 is available at Aetrix Electronics and suitable for automotive engine control units, industrial 48 V DC-DC converters, and on-board chargers requiring stable component supply and long-term lifecycle assurance.

Supply support for IPP057N06N3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 3 product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications demanding low R_DS(on), fast switching, and rugged transient performance.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, and continuous operation is rated up to this limit when case temperature does not exceed 100 °C per the SOA graph. Derating is required above T_C = 25 °C at 0.75 W/°C, verified by thermal testing under steady-state 90 A DC conditions with forced-air cooling.

Is the metal tab electrically connected to the drain terminal?

Yes-the metal tab is internally bonded to the drain (Pin 3) and must be electrically isolated from the heatsink using a UL-certified insulating pad or mica washer. Direct mounting to a grounded heatsink will short the drain to system ground, causing immediate failure.

Does this MOSFET require a gate resistor for EMI suppression?

A 10–22 Ω gate resistor is recommended between driver output and gate pin to dampen parasitic oscillation and reduce radiated emissions. This value was validated in Infineon's reference design AN2015-07 for 300 kHz buck converters, limiting dV/dt to <5 V/ns without compromising t_on/t_off.

Can IPP057N06N3GHKSA1 replace IPP054N06N3 G in existing layouts?

Yes-both share identical PG-TO220-3 footprint, pinout, and thermal pad layout. The 0.3 mΩ R_DS(on) increase is offset by 4 nC lower Q_g, resulting in net neutral or improved efficiency depending on switching frequency; no PCB or driver changes are needed.

IPP057N06N3GHKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 58µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP057N06N3GHKSA1 FAQ

1.How can I place an order for IPP057N06N3GHKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP057N06N3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP057N06N3GHKSA1 reliable?

The price and inventory of IPP057N06N3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP057N06N3GHKSA1 is usually 5 days.

3.What payment methods are accepted for IPP057N06N3GHKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP057N06N3GHKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP057N06N3GHKSA1?

IPP057N06N3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP057N06N3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP057N06N3GHKSA1?

For technical support, including IPP057N06N3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP057N06N3GHKSA1 requirements.

6.How does Aetrix verify that IPP057N06N3GHKSA1 is sourced from the original manufacturer or authorized distributors?

All IPP057N06N3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP057N06N3GHKSA1 meets industry standards.

7.What is the process for return or replacement of IPP057N06N3GHKSA1?

All IPP057N06N3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP057N06N3GHKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP057N06N3GHKSA1 part is unused and in its original packaging.

Return procedure for IPP057N06N3GHKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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