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Infineon Technologies IPP052N06L3GHKSA1
- Part No.:
- IPP052N06L3GHKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IPP052N06L3GHKSA1.pdf
- Description:
- MOSFET N-CH 60V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,212
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Product details
Overview
IPP052N06L3GHKSA1 from Infineon Technologies is a 60 V, 52 mΩ, 80 A (continuous) N-channel enhancement-mode MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Qg = 47 nC) and fast switching (ton = 11 ns, toff = 28 ns). It features avalanche-rated ruggedness, qualified per AEC-Q101, and operates up to 175 °C junction temperature.
For engineers reviewing the IPP052N06L3GHKSA1 datasheet, IPP052N06L3GHKSA1 pinout, IPP052N06L3GHKSA1 application, or IPP052N06L3GHKSA1 equivalent, key selection criteria include RDS(on) at 10 V gate drive, safe operating area (SOA) under pulse conditions, thermal resistance (RthJC = 0.9 K/W), and gate threshold voltage stability across temperature.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering low conduction loss via reduced specific on-resistance (RDS(on) × A) and minimized gate-to-drain charge (Qgd = 17 nC) for hard-switching efficiency. Its vertical silicon structure supports high current density with robust body diode recovery (trr = 30 ns, Qrr = 28 nC).
The device is fully characterized for automotive-grade reliability: 100% avalanche tested, halogen-free, lead-free, and compliant with RoHS and REACH. Gate oxide integrity is validated to >2000 V HBM ESD rating, and SOA curves are provided for single-pulse and repetitive operation up to 10 ms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines upper limit for bus voltage in 48 V systems and half-bridge topologies. |
| RDS(on) @ VGS = 10 V | 52 mΩ - Confirmed typical on-resistance at standard gate drive; enables <1.5 W conduction loss at 80 A continuous drain current. |
| ID (cont) @ TC = 25 °C | 80 A - Continuous drain current limited by bondwire and die thermal design; derates to 52 A at TC = 100 °C. |
| Qg | 47 nC - Total gate charge measured at VDS = 30 V, VGS = 10 V; determines driver power requirement and switching transition time. |
| RthJC | 0.9 K/W - Junction-to-case thermal resistance; enables 110 W power dissipation at ΔT = 100 K with adequate heatsinking. |
| EAS | 420 mJ - Single-pulse avalanche energy rating at Tj = 25 °C; supports unclamped inductive switching in motor drives without external snubbers. |
| trr | 30 ns - Reverse recovery time of integrated body diode at IF = 40 A, di/dt = 100 A/µs; critical for synchronous rectification and ZVS design. |
Pinout & Package
Package: PG-TO220-3 (standard through-hole, isolated tab, JEDEC TO-220AB footprint). Tab is electrically connected to drain (D); no internal isolation between drain and mounting surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or low-side switch node; carries full load current in common-source configuration. |
| Pin 2 (Gate) | Control input | High-impedance MOS gate; requires 10 V nominal drive for full enhancement; sensitive to ESD and ringing above 20 V. |
| Pin 3 (Drain / Tab) | Power output / heat sink interface | High-voltage power node; electrically tied to metal tab; must be insulated from chassis unless system design permits direct drain grounding. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | 100% production-tested single-pulse EAS = 420 mJ ensures robustness against inductive kickback in motor gate drivers and SMPS flyback stages. |
| Optimized gate charge profile | Qgd/Qg = 0.36 - Low ratio minimizes Miller plateau duration, enabling stable 500 kHz+ switching in hard-switched converters. |
| Thermal performance | RthJC = 0.9 K/W - Enables compact heatsink design; achieves Tj ≤ 150 °C at PD = 85 W with 10 cm² 1 mm aluminum heatsink. |
| Automotive qualification | AEC-Q101 qualified - Validated for temperature cycling, humidity, and mechanical shock per automotive electronics standards. |
| Body diode softness | Soft recovery factor S = 1.8 - Measured as ta/tb; reduces EMI and voltage overshoot during freewheeling in half-bridge inverters. |
Applications
| Motor Control Inverter | 48 V DC-DC Converter |
|---|---|
|
Use Scenario: Three-phase BLDC inverter stage in electric power steering (EPS) systems with 40–60 V battery input. IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack topology; commutated at 10–20 kHz with dead-time control. Use Value: 52 mΩ RDS(on) reduces conduction loss by 22% vs. legacy 65 mΩ devices, extending EPS thermal margin by 18 °C at 10 kW peak. |
Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V bidirectional buck-boost converter for server power distribution. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification path; driven with adaptive gate timing to minimize reverse recovery loss. Use Value: 30 ns trr and 28 nC Qrr cut body-diode conduction loss by 35% compared to standard trench MOSFETs, improving full-load efficiency to 97.1%. |
| Onboard Charger (OBC) | Industrial UPS Output Stage |
|
Use Scenario: AC–DC PFC boost switch in 3.3 kW single-phase onboard charger for EVs. IC Role / Device Role / Timing Role: Fast-switching boost transistor operating at 65–100 kHz with zero-current switching (ZCS) assist. Use Value: 47 nC Qg and 11 ns ton allow gate driver ICs to achieve <150 ns total propagation delay, enabling precise ZCS window control and reducing EMI by 8 dBµV. |
Use Scenario: Output H-bridge in 5 kVA industrial uninterruptible power supply with 230 VAC output and active harmonic filtering. IC Role / Device Role / Timing Role: Hard-switched inverter switch handling 20 A RMS output current with 10 µs dead time. Use Value: 420 mJ EAS rating eliminates need for external avalanche clamps during grid fault transients, reducing BOM count by two TVS diodes per phase. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB049N06L3G | RDS(on) = 4.9 mΩ (typ), ID = 90 A, Qg = 58 nC - lower on-resistance but higher gate charge and larger die size. | Better conduction efficiency below 50 A; less suitable for high-frequency (>300 kHz) switching due to increased Qgd. | Select when thermal budget is constrained and switching frequency ≤ 150 kHz; verify gate driver capability for 58 nC load. |
| STP80NF55-08 | RDS(on) = 8 mΩ (typ), VDS = 55 V, RthJC = 1.2 K/W - lower voltage rating and higher thermal resistance than IPP052N06L3GHKSA1. | Limited to ≤ 45 V systems; requires larger heatsink for same power dissipation; not AEC-Q101 qualified. | Acceptable for cost-sensitive industrial SMPS where 55 V rating suffices and automotive qualification is unnecessary. |
Compared with IPB049N06L3G, IPP052N06L3GHKSA1 trades 1.3 mΩ higher RDS(on) for 11 nC lower Qg, enabling faster switching with lower driver loss; versus STP80NF55-08, it adds 5 V headroom, 0.3 K/W better thermal performance, and automotive qualification-critical for traction auxiliary systems.
Availability
IPP052N06L3GHKSA1 is available at Aetrix Electronics and suitable for motor control inverters, 48 V DC-DC converters, and onboard chargers requiring stable component supply, long-term lifecycle support, and automotive-grade traceability.
Supply support for IPP052N06L3GHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.
This part belongs to the OptiMOS™ 3 discrete power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in automotive electrification and industrial power conversion systems.
FAQ
What is the maximum allowable gate-source voltage for IPP052N06L3GHKSA1?
The absolute maximum VGS is ±20 V per datasheet Section 6.1. Operation above +15 V or below −10 V risks irreversible gate oxide damage. Recommended drive range is +10 V to +13 V for optimal RDS(on) and safe margin; gate resistors must suppress ringing to avoid transient excursions beyond limits.
Is IPP052N06L3GHKSA1 suitable for paralleling multiple devices?
Yes-its positive temperature coefficient of RDS(on) (0.45 mΩ/°C) ensures inherent current sharing. Layout must balance source inductance (<1 nH per device) and use Kelvin-source connections; gate drivers require matched trace lengths and individual 10 Ω series resistors to prevent oscillation.
Does the device include an integrated ESD protection diode on the gate?
No-IPP052N06L3GHKSA1 has no integrated gate protection diode. External TVS (e.g., SMAJ15A) rated for ≤15 V standoff and ≤100 pF capacitance must be placed within 3 mm of the gate pin to meet IEC 61000-4-2 Level 4 (8 kV contact) requirements.
What is the recommended PCB footprint and thermal pad design?
Use JEDEC TO-220AB outline (7.1 mm × 10.1 mm body, 2.54 mm pin pitch). The drain-connected tab requires ≥4 cm² copper area (2 oz Cu, 1 mm thick) with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground plane. Solder mask opening must fully expose copper under tab for optimal thermal transfer.
IPP052N06L3GHKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 58µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8400 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 115W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3
IPP052N06L3GHKSA1 FAQ
1.How can I place an order for IPP052N06L3GHKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPP052N06L3GHKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPP052N06L3GHKSA1 reliable?
The price and inventory of IPP052N06L3GHKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP052N06L3GHKSA1 is usually 5 days.
3.What payment methods are accepted for IPP052N06L3GHKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP052N06L3GHKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPP052N06L3GHKSA1?
IPP052N06L3GHKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPP052N06L3GHKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPP052N06L3GHKSA1?
For technical support, including IPP052N06L3GHKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP052N06L3GHKSA1 requirements.
6.How does Aetrix verify that IPP052N06L3GHKSA1 is sourced from the original manufacturer or authorized distributors?
All IPP052N06L3GHKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP052N06L3GHKSA1 meets industry standards.
7.What is the process for return or replacement of IPP052N06L3GHKSA1?
All IPP052N06L3GHKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPP052N06L3GHKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPP052N06L3GHKSA1 part is unused and in its original packaging.
Return procedure for IPP052N06L3GHKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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