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Infineon Technologies IPD60R800CEATMA1

Part No.:
IPD60R800CEATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R800CEATMA1.pdf
Description:
MOSFET N-CH 600V 5.6A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,674

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Product details

Overview

IPD60R800CEATMA1 from Infineon Technologies is a 600 V, 0.8 Ω RDS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 8.4 A continuous drain current at TC = 25°C, 17.2 nC total gate charge, and 1.6 µJ output switching energy at 400 V - enabling compact, cost-sensitive lighting and adapter designs.

For engineers reviewing the IPD60R800CEATMA1 datasheet, IPD60R800CEATMA1 pinout, IPD60R800CEATMA1 application, or IPD60R800CEATMA1 equivalent, key selection criteria include its low FOM (RDS(on) × Qg), high commutation ruggedness (500 A/µs di/dt), and validated performance in resonant and hard-switched topologies up to 150°C junction temperature.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure with optimized charge balance for reduced conduction and switching losses. Its 2.5–3.5 V gate threshold voltage and 5.4 V gate plateau ensure stable turn-on under wide VGS margin while maintaining compatibility with standard 10–13 V gate drivers.

The MOSFET integrates an ultra-fast body diode with 250 ns reverse recovery time and 1.8 µC Qrr, supporting ZVS operation in LLC and PFC circuits. Thermal resistance of 1.70 °C/W (junct-to-case) enables high-power density mounting on minimal PCB copper (6 cm²) without forced airflow.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - rated blocking voltage for universal-input offline SMPS (85–265 VAC) with 20% safety margin
RDS(on) 0.80 Ω max @ Tj = 150°C - enables <1.5 W conduction loss at 8.4 A, reducing heatsink requirements
Qg 17.2 nC typ - low gate drive power demand supports 100+ kHz switching with standard gate drivers
Eoss 1.6 µJ @ 400 V - minimizes turn-off loss in high-frequency PFC and resonant converters
ID,pulse 15.7 A - supports peak-load handling in transient conditions without derating
dv/dt ruggedness 50 V/ns - ensures reliable operation in noisy high-dV/dt environments like motor drives and inverters
RthJC 1.70 °C/W - allows direct thermal coupling to PCB copper for passive cooling in space-constrained adapters

Pinout & Package

IPD60R800CEATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 6.5 mm × 6.2 mm × 2.3 mm and is RoHS-compliant with halogen-free molding compound.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Low-impedance gate terminal requiring ≤13 V drive; 11 Ω internal gate resistance limits ringing
Pin 2 (Drain) High-voltage power output Connected to exposed copper tab - must be routed to high-voltage node and thermally coupled to PCB copper
Pin 3 (Source) Power return / reference Common source node for gate drive return path and current sensing; critical for noise immunity in high-dv/dt layouts

Key Features

Feature Design Value
Ultra-low FOM (RDS(on) × Qg) 13.76 Ω·nC - reduces combined conduction + switching loss by >25% vs. prior CoolMOS™ C7 in 65–100 kHz PFC
High commutation ruggedness 500 A/µs di/dt rating - sustains fast current reversal in LLC resonant tanks without failure
Enhanced body diode 250 ns trr, 1.8 µC Qrr - enables soft-switching in bridgeless PFC and reduces snubber losses
Standard-grade qualification AEC-Q101 not required; qualified per JEDEC JESD47 for industrial/consumer use - lowers BOM cost vs. automotive-grade parts
Pb-free & halogen-free RoHS-compliant plating and mold compound - meets IEC 61249-2-21 and EU Directive 2015/863

Applications

LED Driver Power Stage PC Silverbox PFC

Use Scenario: Constant-current LED driver for indoor architectural lighting with universal AC input and 90%+ efficiency target.

IC Role / Device Role / Timing Role: Primary-side switch in boost PFC + flyback combo stage, operating at 65 kHz with discontinuous conduction mode.

Use Value: 0.8 Ω RDS(on) and 1.6 µJ Eoss reduce thermal load by 3.2 W vs. legacy 1 Ω MOSFET, enabling fanless enclosure design.

Use Scenario: Active PFC front-end in 300–500 W desktop PC power supplies meeting 80 PLUS Bronze efficiency.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC controller, switching at 67 kHz with 10–13 V gate drive.

Use Value: 17.2 nC Qg allows use of low-cost bipolar gate drivers (e.g., IR2110) without external MOSFET buffers.

LCD TV Backlight Inverter USB-C PD Adapter

Use Scenario: High-voltage half-bridge in CCFL or edge-lit LED backlight inclusions for 32–55 inch LCD TVs.

IC Role / Device Role / Timing Role: High-side switch in resonant half-bridge driving transformer primary at 50–100 kHz.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high-slew-rate transitions in transformer-coupled gate drive.

Use Scenario: Primary-side switch in 65 W GaN-assisted USB-C PD adapter with hybrid DCM/QR flyback topology.

IC Role / Device Role / Timing Role: Main power switch operating up to 130 kHz with valley-switching control and adaptive dead-time.

Use Value: 1.70 °C/W RthJC enables full 65 W output on 4-layer PCB with 6 cm² drain copper - no heatsink required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPD60R600CEATMA1 Lower RDS(on) (0.6 Ω max), higher Qg (21.5 nC), same package Better conduction loss at high DC loads; higher gate drive loss above 100 kHz Select when average load >7 A and switching frequency <80 kHz
IPA60R800CEXKSA1 Same die, TO-220FP (FullPAK) package, 4.6 °C/W RthJC, 27 W Ptot Higher thermal mass and screw-mount capability; requires through-hole assembly Select for industrial power supplies needing mechanical robustness and >100k-cycle reliability

Compared with IPD60R800CEATMA1, the IPD60R600CEATMA1 trades gate drive efficiency for lower conduction loss, while the IPA60R800CEXKSA1 sacrifices PCB area and SMT compatibility for superior thermal management in high-ambient environments.

Availability

IPD60R800CEATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, PC silverbox power supplies, LCD TV backlights, and USB-C PD adapters requiring stable component supply and long-term production continuity.

Supply support for IPD60R800CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with over 30 years of high-voltage MOSFET innovation.

The CoolMOS™ CE product line targets cost-sensitive consumer and lighting applications where high efficiency must coexist with aggressive BOM cost targets - delivering best-in-class price-performance ratio for 600 V superjunction devices.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 6.8 Ω for characterization, but practical designs use 4.7–10 Ω to balance switching speed and gate oscillation. Values >15 Ω increase turn-on delay beyond 20 ns and risk shoot-through in half-bridge configurations due to extended overlap time.

Can IPD60R800CEATMA1 be paralleled for higher current capacity?

Yes - but only with individual gate resistors (≥10 Ω) and ferrite beads on each gate line to suppress high-frequency oscillation. Matching layout symmetry and thermal coupling across devices is mandatory; mismatched RDS(on) drift above 100°C can cause current imbalance exceeding 30%.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is fully specified for 0 to +13 V gate drive. Negative turn-off (e.g., –5 V) is unnecessary and not characterized; the 30 V dynamic VGS rating applies only to transient spikes, not sustained bias.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the DC SOA limits continuous drain current to 4.2 A at 400 V VDS. For pulse operation (100 µs), it supports 12 A at 500 V - verified in Figure 7 of the datasheet under TC = 80°C derated conditions.

IPD60R800CEATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CE
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:
17.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
373 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
48W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD60R800CEATMA1 FAQ

1.How can I place an order for IPD60R800CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R800CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R800CEATMA1 reliable?

The price and inventory of IPD60R800CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R800CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R800CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R800CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R800CEATMA1?

IPD60R800CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R800CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R800CEATMA1?

For technical support, including IPD60R800CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R800CEATMA1 requirements.

6.How does Aetrix verify that IPD60R800CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R800CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R800CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R800CEATMA1?

All IPD60R800CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R800CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R800CEATMA1 part is unused and in its original packaging.

Return procedure for IPD60R800CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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