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Infineon Technologies IRFZ34NLPBF
- Part No.:
- IRFZ34NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFZ34NLPBF.pdf
- Description:
- MOSFET N-CH 55V 29A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:5,433
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Product details
Overview
IRFZ34NLPBF from Infineon Technologies is a 55 V, 28 A, N-channel enhancement-mode MOSFET in TO-262 (D-Pak) package with 0.04 Ω RDS(on) at VGS = 10 V, designed for high-efficiency DC-DC converters and motor drive half-bridge switches where low conduction loss and fast switching are critical.
For engineers reviewing the IRFZ34NLPBF datasheet, IRFZ34NLPBF pinout, IRFZ34NLPBF application, or IRFZ34NLPBF equivalent, this device supports 16 A continuous drain current at TC = 100 °C, features 100% avalanche-rated ruggedness (EAS = 120 mJ), and delivers gate charge QG = 35 nC - key parameters for PWM-controlled power stages in industrial motor controllers and SMPS designs.
Technical Context
This MOSFET employs planar stripe silicon technology optimized for low RDS(on) and controlled body diode reverse recovery (trr = 120 ns, Qrr = 45 nC at IF = 26 A). Its gate threshold voltage VGS(th) is specified between 2.0 V and 4.0 V, enabling direct drive from 3.3 V or 5 V logic with adequate margin.
The device operates with maximum junction temperature of 175 °C and exhibits normalized RDS(on) drift ≤ 2.0× from 25 °C to 175 °C. Thermal resistance RthJC is 1.0 °C/W, supporting high-power density layouts when mounted on copper-clad PCBs with thermal vias.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - Maximum blocking voltage for 24 V/48 V bus applications without derating |
| RDS(on) @ VGS=10 V | 0.04 Ω - Enables ≤1.2 W conduction loss at 17.3 A RMS in 50% duty-cycle switch |
| ID (continuous) | 28 A @ TC = 25 °C - Supports high-current output stages without parallel devices |
| QG | 35 nC - Determines gate driver current requirement (~3.5 mA avg for 100 kHz, 10 V swing) |
| EAS | 120 mJ - Withstands single-pulse inductive energy in relay/motor snubberless designs |
| tr/tf | 35 ns / 50 ns - Limits switching transition time to reduce overlap loss in synchronous rectifiers |
| Body diode VSD | 1.3 V @ IS = 26 A - Low forward drop reduces freewheeling loss in H-bridge motor control |
Pinout & Package
IRFZ34NLPBF uses a 3-pin TO-262 (D-Pak) surface-mount package with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Receives 10 V gate drive to fully enhance channel; requires <100 Ω series resistance to damp ringing |
| Drain (D) | High-side current sink | Connected to PCB copper pour for heat dissipation; electrically tied to metal tab |
| Source (S) | Reference node for gate drive | Serves as return path for load current and gate drive loop; must minimize inductance |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees robustness against inductive kickback without external clamping in motor drives |
| Low gate charge (QG = 35 nC) | Reduces driver power consumption and enables use of low-cost SOT-23 gate drivers |
| Fast body diode (trr = 120 ns) | Minimizes cross-conduction risk and EMI during hard-commutation in half-bridge topologies |
| Rugged SOA (Safe Operating Area) | Supports 10 ms pulse width at 28 A and 44 V without second breakdown - ideal for surge-limited loads |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard reflow assembly |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 48 V input to 12 V/20 A output step-down converter in telecom power shelf. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz PWM frequency. Use Value: 0.04 Ω RDS(on) limits conduction loss to 1.6 W at full load, enabling >95% efficiency without heatsink. | Use Scenario: H-bridge driver for 24 V, 15 A brushed motor in automated gate actuator. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and braking via PWM duty cycle. Use Value: 120 mJ avalanche rating absorbs back-EMF during dynamic braking without snubber network. |
| AC Induction Motor Inverter | Industrial Power Supply |
Use Scenario: 3-phase inverter stage driving 0.75 kW fan motor in HVAC system. IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack configuration with 10 kHz carrier frequency. Use Value: Fast tr/tf (35/50 ns) reduces switching loss to <0.8 W per transition, lowering thermal stress. | Use Scenario: Primary-side switch in 300 W offline flyback power supply for factory automation controller. IC Role / Device Role / Timing Role: Self-oscillating quasi-resonant switch with 65 kHz fundamental frequency. Use Value: Body diode VSD = 1.3 V minimizes conduction loss during valley-switching dead time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF20 | RDS(on) = 0.036 Ω @ 10 V, but higher QG = 45 nC and lower VDSS = 200 V | Better for 100–200 V systems; less suitable for 55 V optimized designs due to over-spec'd voltage rating | Prefer when higher voltage margin is required and gate drive capability allows extra 10 nC charge |
| IRFZ44NLPBF | RDS(on) = 0.028 Ω @ 10 V, same package, but higher Ciss = 1400 pF vs. 1100 pF | Delivers lower conduction loss but increases gate drive power and EMI risk above 150 kHz | Choose only if RDS(on) reduction justifies added gate drive burden and layout complexity |
Compared with STP30NF20 and IRFZ44NLPBF, IRFZ34NLPBF offers optimal balance of low RDS(on), moderate QG, and tight VDSS rating for 48 V industrial power stages - minimizing both conduction loss and gate drive overhead without over-engineering voltage headroom.
Availability
IRFZ34NLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRFZ34NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The StrongIRFET™ product line - to which IRFZ34NLPBF belongs - targets cost-sensitive, high-reliability power switching applications in industrial motor control, UPS, and renewable energy inverters using optimized planar MOSFET architecture.
FAQ
What is the maximum safe operating junction temperature for IRFZ34NLPBF?
The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD22-A104. Operation up to this limit is permitted under pulsed conditions with appropriate thermal design; continuous operation should maintain TJ ≤ 150 °C to ensure long-term reliability and avoid parametric shift in RDS(on).
Can IRFZ34NLPBF be driven directly from a 3.3 V microcontroller GPIO?
No - its VGS(th) min is 2.0 V, but full enhancement requires ≥10 V for RDS(on) specification. At 3.3 V, RDS(on) exceeds 0.25 Ω, causing excessive conduction loss. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is mandatory for reliable switching.
Does IRFZ34NLPBF include integrated gate protection?
No - it lacks built-in gate Zener or series resistance. External gate protection (e.g., 12 V Zener clamp between G and S, 10–22 Ω series resistor) is required to prevent ESD damage and overvoltage during hot-plug or layout-induced transients, especially in high-noise industrial environments.
How does the body diode performance compare to discrete Schottky alternatives?
The intrinsic body diode has VSD = 1.3 V and trr = 120 ns - higher forward drop and slower recovery than 45 V Schottky diodes (e.g., SS34: 0.5 V, no recovery). For high-frequency freewheeling, a parallel Schottky is recommended; however, the body diode suffices for <50 kHz motor commutation where reverse recovery energy is manageable.
IRFZ34NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFZ34NLPBF FAQ
1.How can I place an order for IRFZ34NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ34NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ34NLPBF reliable?
The price and inventory of IRFZ34NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34NLPBF is usually 5 days.
3.What payment methods are accepted for IRFZ34NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ34NLPBF?
IRFZ34NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ34NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ34NLPBF?
For technical support, including IRFZ34NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34NLPBF requirements.
6.How does Aetrix verify that IRFZ34NLPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ34NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34NLPBF meets industry standards.
7.What is the process for return or replacement of IRFZ34NLPBF?
All IRFZ34NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ34NLPBF part is unused and in its original packaging.
Return procedure for IRFZ34NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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