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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRL8113S MOSFET N-CH 30V 105A D2PAK Infineon Technologies	4,099	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	105A (Tc)	4.5V, 10V	6mOhm @ 21A, 10V	2.25V @ 250µA	35 nC @ 4.5 V	±20V	2840 pF @ 15 V	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
ISC0803NLSATMA1 MOSFET N-CH 100V 8.8A/37A 8TDSON Infineon Technologies	3,381	RFQ	Datasheet	OptiMOS™ 5	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	8.8A (Ta), 37A (Tc)	4.5V, 10V	16.9mOhm @ 20A, 10V	2.3V @ 18µA	15 nC @ 10 V	±20V	1000 pF @ 50 V	-	2.5W (Ta), 43W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8
IRLI530N MOSFET N-CH 100V 12A TO220AB FP Infineon Technologies	4,593	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	4V, 10V	100mOhm @ 9A, 10V	2V @ 250µA	34 nC @ 5 V	±16V	800 pF @ 25 V	-	41W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP
IRLIB4343 MOSFET N-CH 55V 19A TO220AB FP Infineon Technologies	8,790	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	4.5V, 10V	50mOhm @ 4.7A, 10V	1V @ 250µA	42 nC @ 10 V	±20V	740 pF @ 50 V	-	39W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB Full-Pak
IRF6635TR1 MOSFET N-CH 30V 32A DIRECTFET Infineon Technologies	8,747	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Ta), 180A (Tc)	4.5V, 10V	1.8mOhm @ 32A, 10V	2.35V @ 250µA	71 nC @ 4.5 V	±20V	5970 pF @ 15 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
IPP120N10S405AKSA1 MOSFET N-CH 100V 120A TO220-3 Infineon Technologies	7,006	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	5.3mOhm @ 100A, 10V	3.5V @ 120µA	91 nC @ 10 V	±20V	6540 pF @ 25 V	-	190W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO220-3-1
IPP06CN10N G MOSFET N-CH 100V 100A TO220-3 Infineon Technologies	8,802	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	6.5mOhm @ 100A, 10V	4V @ 180µA	139 nC @ 10 V	±20V	9200 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
SPP80N04S2-04 MOSFET N-CH 40V 80A TO220-3 Infineon Technologies	4,562	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	80A (Tc)	10V	3.7mOhm @ 80A, 10V	4V @ 250µA	170 nC @ 10 V	±20V	6980 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1
IRFP4229PBFXKMA1 TRENCH >=100V Infineon Technologies	4,582	RFQ	-	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	44A (Tc)	10V	46mOhm @ 26A, 10V	5V @ 250µA	110 nC @ 10 V	±30V	4560 pF @ 25 V	-	310W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247AC
IRF640NL MOSFET N-CH 200V 18A TO262 Infineon Technologies	5,544	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262

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