Infineon Technologies IRL8113S

Overview

IRL8113S from Infineon Technologies is a 30V, 74A N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency synchronous buck converters in CPU core power supplies. It delivers 4.8 mΩ R_DS(on) at V_GS = 4.5V, 23 nC total gate charge, and fully characterized avalanche capability up to 1000 mJ.

For engineers reviewing the IRL8113S datasheet, IRL8113S pinout, IRL8113S application, or IRL8113S equivalent, key selection criteria include low 4.5V drive compatibility, tight R_DS(on) temperature stability, body diode reverse recovery charge (Q_rr = 7.2–11 nC), and junction-to-case thermal resistance of 1.32°C/W - all critical for high-efficiency, high-density VRM designs.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) enables direct logic-level drive from PWM controllers such as Intel VR12/VR13 compliant ICs.

The device integrates a co-packaged, low-Q_rr body diode (t_rr = 18–27 ns, Q_rr = 7.2–11 nC) with soft recovery characteristics, minimizing shoot-through risk in synchronous rectification. Thermal design is supported by validated transient impedance data (Z_thJC) and linear derating factor of 0.76 W/°C above 100°C case temperature.

Key Specifications

Pinout & Package

IRL8113S uses the surface-mount D2Pak (TO-263) package with exposed drain pad for thermal and electrical connection. The package features 3 leads: Gate (G), Drain (D), Source (S), with Drain electrically and thermally connected to the large copper tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL8113PbF and IRL8113LPbF, the IRL8113S offers superior thermal performance in surface-mount high-density designs due to its D2Pak's direct-drain thermal pad, enabling 25% higher current handling at equal case temperature - a decisive advantage in space-constrained VRMs.

Availability

IRL8113S is available at Aetrix Electronics and suitable for server VRM core power stages, laptop CPU voltage regulators, and GPU power delivery modules requiring stable component supply and long-term industrial availability.

Supply support for IRL8113S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRL8113S belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low gate drive voltage and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for IRL8113S at 100°C case temperature?

The IRL8113S supports 74 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB copper area (≥10 cm² 2 oz Cu) and thermal interface to heatsink. Derating begins linearly at 0.76 W/°C above 100°C case temperature.

Does IRL8113S require a gate resistor for safe operation in 500 kHz synchronous buck converters?

Yes - a 2.2–4.7 Ω gate resistor is recommended to damp ringing and limit peak gate current during 500 kHz switching. The device's Q_g = 23 nC and C_iss = 2840 pF interact with driver output impedance; omitting the resistor risks overshoot (>20 V), increased EMI, and accelerated gate oxide wear under repeated fast transitions.

Can IRL8113S be used as a high-side switch in a floating-gate configuration?

No - the IRL8113S is a standard-level N-channel MOSFET without integrated bootstrap diode or level-shifting circuitry. For high-side operation, it requires an external gate driver with floating supply (e.g., IR2110) and bootstrap capacitor. Its V_GS rating of ±20 V limits gate drive headroom in high-V_IN applications.

How does the body diode's reverse recovery charge affect synchronous buck efficiency?

The IRL8113S body diode exhibits Q_rr = 7.2–11 nC, which directly contributes to switching losses during dead-time conduction. In a 40A, 300 kHz buck converter, this adds ~0.35 W of recoverable loss per phase - mitigated by selecting complementary high-side FETs with matched Q_rr and optimizing dead-time to 50–75 ns based on measured t_rr.