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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLI530N

Name: IRLI530N
Brand: Infineon Technologies
SKU: IRLI530N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLI530N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRLI530N.pdf

Description:: MOSFET N-CH 100V 12A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,593

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Product details

Overview

IRLI530N from Infineon Technologies (formerly International Rectifier) is a 100V, 12A N-channel enhancement-mode power MOSFET in TO-220 Full-Pak package, featuring R_DS(on) = 0.10 Ω @ V_GS = 10V, logic-level gate drive (V_GS(th) = 1.0–2.0 V), and fully avalanche-rated operation. It serves as a high-efficiency, isolated-switching power device in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRLI530N datasheet, IRLI530N pinout, IRLI530N application, or IRLI530N equivalent, key selection criteria include its 2.5 kV_RMS isolation rating, 4.8 mm sink-to-lead creepage distance, 150 mJ single-pulse avalanche energy, and compatibility with standard heatsink mounting via single screw or clip-critical for thermally demanding commercial-industrial designs.

Technical Context

This HEXFET® Power MOSFET employs fifth-generation silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching capability. Its integrated body diode supports synchronous rectification and freewheeling, with t_rr = 140–210 ns and Q_rr = 740–1100 nC at T_J = 25°C.

The TO-220 Full-Pak package provides intrinsic electrical isolation between drain (tab) and leads, eliminating external insulators. Thermal resistance is R_θJC = 3.7 °C/W and R_θJA = 65 °C/W, enabling reliable operation up to T_J = +175°C with proper heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; suitable for 48V bus and 100V DC input systems.
R_DS(on)	0.10 Ω @ V_GS = 10V - Low conduction loss enables <1.2W dissipation at 12A continuous drain current.
I_D (T_C = 25°C)	12 A - Continuous current rating at case temperature 25°C; derates linearly by 0.27 W/°C above 25°C.
E_AS	150 mJ - Single-pulse avalanche energy; ensures robustness against inductive load transients without external snubbers.
V_GS(th)	1.0–2.0 V - Logic-level threshold enables direct drive from 3.3V/5V microcontrollers without gate drivers.
Q_g	34 nC - Total gate charge determines switching loss and driver sizing; compatible with low-power gate drivers.
t_r/t_f	53 ns / 26 ns - Fast switching transitions reduce overlap loss in hard-switched topologies like buck converters.

Pinout & Package

IRLI530N uses the TO-220 Full-Pak package: an electrically isolated variant of TO-220AB where the metal tab is internally connected to the drain and rated for 2.5 kV_RMS isolation. Mounting requires only one screw or clip, with creepage distance of 4.8 mm between tab and leads.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives logic-level voltage (1.0–16 V); low input capacitance (C_iss = 800 pF) minimizes driver burden.
D (Drain)	High-side power terminal	Internally bonded to isolated metal tab; serves as primary heat path and high-voltage node (100 V max).
S (Source)	Reference and return path	Common connection for gate drive reference and load return; internal source inductance L_S = 7.5 nH affects high-di/dt stability.

Key Features

Feature	Design Value
Isolated TO-220 Full-Pak	Eliminates need for mica washers or insulating sleeves-reduces assembly cost and thermal interface resistance.
Fully avalanche rated	Guarantees survivability under unclamped inductive switching (E_AS = 150 mJ), reducing design margin requirements.
Logic-level gate drive	Operates reliably with 3.3V/5V controllers, avoiding level-shifters and simplifying PCB layout.
Low R_DS(on) × Q_g figure-of-merit	0.10 Ω × 34 nC = 3.4 Ω·nC - balances conduction and switching losses for medium-frequency SMPS (≤100 kHz).

Applications

Motor Drive Inverter

DC-DC Buck Converter

Use Scenario: Half-bridge switching in 24–48V BLDC motor controllers for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side N-channel switch with integrated body diode used for freewheeling and PWM-controlled phase current.

Use Value: 0.10 Ω R_DS(on) limits conduction loss to ≤1.4W at 12A, while 150 mJ E_AS withstands motor back-EMF spikes during commutation.

Use Scenario: Primary switch in 12V-to-5V/3.3V non-isolated buck regulators for embedded control modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for Schottky diodes, driven by complementary PWM signals.

Use Value: Logic-level V_GS(th) allows direct gate control from MCU GPIO; fast t_r/t_f reduces switching loss at 50–100 kHz.

Industrial AC-DC Front-End

LED Driver Power Switch

Use Scenario: PFC boost switch in universal-input (90–264 VAC) offline power supplies for factory automation equipment.

IC Role / Device Role / Timing Role: Main switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 100V V_DSS accommodates reflected line transients; 65 °C/W R_θJA enables natural-convection cooling in enclosed enclosures.

Use Scenario: Constant-current switch in high-brightness LED string drivers for street lighting and signage.

IC Role / Device Role / Timing Role: PWM-controlled current regulator placed in series with LED load and sense resistor.

Use Value: 12A I_D rating supports >100W LED arrays; low R_DS(on) maintains >96% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF530N	R_DS(on) = 0.16 Ω @ 10V; V_GS(th) = 2.0–4.0 V; no isolation rating	Requires gate driver for 3.3V logic; needs external insulator for heatsink mounting	Lower cost but higher conduction loss and reduced thermal/mechanical integration
STP12NK100Z	1000V rating; R_DS(on) = 0.95 Ω @ 10V; Zener-protected gate; slower switching	Designed for high-voltage flyback and resonant converters, not low-V_DS high-current apps	Not interchangeable-over-specified voltage, under-specified current and speed for IRLI530N use cases

Compared with IRF530N and STP12NK100Z, the IRLI530N uniquely combines logic-level drive, isolated packaging, and optimized R_DS(on)/Q_g for compact, thermally efficient 100V switching in space-constrained industrial power stages.

Availability

IRLI530N is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial AC-DC front-ends requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IRLI530N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's power MOSFET legacy.

The IRLI530N belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion where thermal performance, ruggedness, and simplified mechanical integration are critical.

FAQ

Is the IRLI530N RoHS-compliant and lead-free?

Yes, the IRLI530N is lead-free and RoHS-compliant, indicated by the "PbF" suffix in its orderable part number (IRLI530NPbF). It meets EU Directive 2011/65/EU and has been verified per JEDEC J-STD-609A Class 1 marking standards.

Can the IRLI530N be used in surface-mount designs?

No-the TO-220 Full-Pak package is explicitly not recommended for surface-mount applications. Its mechanical structure, tab geometry, and thermal path are designed for through-hole mounting and heatsink attachment using screws or clips.

What is the maximum safe operating frequency for the IRLI530N?

The IRLI530N is optimized for hard-switched operation up to 100 kHz. At higher frequencies, switching losses dominate due to Q_g = 34 nC and C_oss = 160 pF; operation beyond 150 kHz requires careful gate drive optimization and thermal derating.

Does the IRLI530N require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 5V logic drive, R_G = 6.0 Ω is used in characterization (per Fig. 10 and datasheet switching specs); values between 4.7 Ω and 10 Ω balance speed and ringing suppression in most 48V applications.

IRLI530N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 41W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IRLI530N FAQ

1.How can I place an order for IRLI530N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLI530N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLI530N reliable?

The price and inventory of IRLI530N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLI530N is usually 5 days.

3.What payment methods are accepted for IRLI530N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLI530N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLI530N?

IRLI530N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLI530N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLI530N?

For technical support, including IRLI530N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLI530N requirements.

6.How does Aetrix verify that IRLI530N is sourced from the original manufacturer or authorized distributors?

All IRLI530N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLI530N meets industry standards.

7.What is the process for return or replacement of IRLI530N?

All IRLI530N units undergo pre-shipment inspection (PSI). If there is an issue with IRLI530N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLI530N part is unused and in its original packaging.

Return procedure for IRLI530N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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