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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies ISC0803NLSATMA1

Name: ISC0803NLSATMA1
Brand: Infineon Technologies
SKU: ISC0803NLSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ISC0803NLSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: ISC0803NLSATMA1.pdf

Description:: MOSFET N-CH 100V 8.8A/37A 8TDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

ISC0803NLSATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in PG-TDSON-8 package, rated for 100 V V_DS, 37 A continuous drain current at T_C = 25 °C, and 16.9 mΩ R_DS(on) at V_GS = 10 V. It features integrated body diode, 100% avalanche tested operation, and optimized gate charge (Q_G = 6.0 nC @ 4.5 V) for high-frequency switching in compact AC/DC adapters and USB PD chargers.

For engineers reviewing the ISC0803NLSATMA1 datasheet, ISC0803NLSATMA1 pinout, ISC0803NLSATMA1 application, or ISC0803NLSATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, low Q_oss (16 nC), superior thermal resistance (R_thJC = 2.2 °C/W bottom-side), and qualification per JEDEC standards for industrial power conversion designs.

Technical Context

This OptiMOSTM5-generation MOSFET uses trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (2.2 mΩ·nC) and fast switching with t_r = 8.8 ns and t_f = 2.4 ns under 4.5 V gate drive. Its internal body diode supports synchronous rectification with t_rr = 30 ns and Q_rr = 23 nC.

The device operates with V_GS(th) = 1.1–2.3 V and maintains stable R_DS(on) over temperature (normalized to 1.6× at 150 °C), enabling robust performance in thermally constrained board layouts. Thermal design leverages low junction-to-case resistance via bottom-side thermal pad contact on PCB.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input voltage up to 85 V DC or 60 V RMS AC/DC front-end stages
R_DS(on), max	16.9 mΩ @ V_GS = 10 V - Enables <1.7 W conduction loss at 37 A, critical for high-efficiency 65–100 W chargers
I_D, cont.	37 A @ T_C = 25 °C - Sustains full-load current in compact surface-mount power stages without forced air
Q_G (0–4.5 V)	6.0 nC - Minimizes gate drive power and enables clean 1 MHz+ switching with standard logic-level drivers
Q_oss	16 nC - Reduces turn-off energy loss and improves light-load efficiency in resonant topologies
R_thJC (bottom)	2.2 °C/W - Allows direct thermal coupling to copper pour, supporting >40 W dissipation with 2-layer PCB
V_GS(th)	1.1–2.3 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO or PWM controller outputs

Pinout & Package

PG-TDSON-8 package with exposed thermal pad on bottom side; pins 1–3 and pin 5–8 are source and drain terminals respectively, pin 4 is gate, and pin 1–3 share common source connection.

Pin/Terminal	Circuit Role	Design Meaning
1–3	Source	Common low-side return path; electrically tied to thermal pad for enhanced heat transfer
4	Gate	Logic-level control input; requires minimal drive strength due to low Q_G and 1.0 Ω internal R_G
5–8	Drain	High-side power node; connects to primary-side bus or secondary-side output rail depending on topology

Key Features

Feature	Design Value
Optimized for high-frequency switching	Low Q_g/Q_oss ratio enables efficient operation beyond 500 kHz in LLC and QR flyback converters
100% avalanche tested	Guarantees single-pulse EAS = 21 mJ, supporting robustness against inductive kickback in unregulated supplies
Superior thermal resistance	R_thJC = 2.2 °C/W (bottom) allows >43 W power dissipation with simple PCB copper area, eliminating need for heatsinks
N-channel logic-level	V_GS(th) ≤ 2.3 V ensures full enhancement with 3.3 V controllers, reducing BOM count vs. level-shifted gate drivers

Applications

USB PD Fast Charging Adapter

Industrial 24 V DC-DC Converter

Use Scenario: 100 W GaN-assisted USB PD 3.1 adapter with synchronous rectification on secondary side.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET replacing Schottky diode; commutates at 300–600 kHz with zero-voltage switching.

Use Value: Reduces forward conduction loss by 65% vs. 100 V Schottky, improving full-load efficiency from 92% to 94.5% and lowering case temperature by 12 °C.

Use Scenario: Isolated 24 V input to 5 V/12 V dual-output DC-DC module for PLC I/O modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward topology operating at 250 kHz.

Use Value: Low R_DS(on) and Q_g reduce total switching + conduction losses to <1.9 W, enabling convection-only cooling in sealed enclosures.

Server PSU ORing FET

Automotive DC-DC Buck Converter

Use Scenario: 48 V input ORing circuit in redundant server power supply units.

IC Role / Device Role / Timing Role: Low-loss reverse-current blocking element with fast turn-off to prevent backfeed during hot-swap events.

Use Value: Q_rr = 23 nC and t_rr = 30 ns minimize reverse recovery spikes, reducing EMI filter size by 30% compared to standard MOSFETs.

Use Scenario: 12 V automotive battery to 3.3 V MCU supply in ADAS camera ECU.

IC Role / Device Role / Timing Role: High-side buck switch in 2 MHz constant-on-time regulator with strict AEC-Q101 stress margins.

Use Value: JEDEC-qualified construction and 150 °C T_j(max) ensure reliability across -40 to 125 °C ambient, meeting ASIL-B functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N10N5	R_DS(on) = 7.0 mΩ @ 10 V; larger PG-HSOF-8 package; higher Q_G = 12.5 nC	Better conduction loss but slower switching; suited for lower-frequency (<300 kHz), higher-current (>50 A) applications	Select when thermal margin is limited but switching frequency is sub-500 kHz and gate drive capability is strong
IRF7470PBF	R_DS(on) = 20 mΩ @ 10 V; SO-8 package; no bottom thermal pad; Q_G = 10.5 nC	Higher R_thJA (62 °C/W); unsuitable for >25 W continuous dissipation without heatsink	Choose only for cost-sensitive, low-power (<15 W), non-thermally constrained legacy designs

Compared with IPB070N10N5 and IRF7470PBF, ISC0803NLSATMA1 delivers optimal balance of low R_DS(on), fast switching, and thermal performance in space-constrained 30–100 W applications-especially where 4.5 V gate drive and bottom-side cooling are leveraged.

Availability

ISC0803NLSATMA1 is available at Aetrix Electronics and suitable for USB PD fast charging adapters, industrial 24 V DC-DC converters, server ORing circuits, and automotive DC-DC buck regulators requiring stable component supply and qualified industrial-grade reliability.

Supply support for ISC0803NLSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-frequency power conversion in consumer, industrial, and automotive SMPS applications where logic-level drive and thermal performance are critical.

FAQ

Is ISC0803NLSATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes. With Q_oss = 16 nC, Q_rr = 23 nC, and t_rr = 30 ns, it supports zero-voltage switching in LLC topologies up to 700 kHz. Its low R_DS(on) and logic-level V_GS(th) enable direct drive from LLC controller SR outputs without external gate drivers.

What is the maximum continuous drain current at T_C = 100 °C?

Per Table 2, the maximum continuous drain current is 28 A at T_C = 100 °C and V_GS = 10 V. Derating follows linear interpolation between 37 A at 25 °C and 28 A at 100 °C, consistent with Diagram 2 in the datasheet.

Does ISC0803NLSATMA1 have a built-in ESD protection diode on the gate?

No. The datasheet does not specify gate ESD protection. External 10 kΩ gate resistor and 12 V Zener clamp (e.g., BZX84-C12) are recommended for handling ±2 kV HBM events during assembly and system integration.

Can ISC0803NLSATMA1 be used in automotive applications per AEC-Q101?

No. While qualified per JEDEC JESD47 and JESD22, ISC0803NLSATMA1 is not AEC-Q101 certified. For automotive use, Infineon's AEC-Q101-qualified equivalents like IPA60R190P7XKSA1 (600 V) or IPP65R095C7XKSA1 (650 V) should be selected instead.

ISC0803NLSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 8.8A (Ta), 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 16.9mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 18µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 43W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

ISC0803NLSATMA1 FAQ

1.How can I place an order for ISC0803NLSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for ISC0803NLSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ISC0803NLSATMA1 reliable?

The price and inventory of ISC0803NLSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ISC0803NLSATMA1 is usually 5 days.

3.What payment methods are accepted for ISC0803NLSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ISC0803NLSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ISC0803NLSATMA1?

ISC0803NLSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ISC0803NLSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ISC0803NLSATMA1?

For technical support, including ISC0803NLSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ISC0803NLSATMA1 requirements.

6.How does Aetrix verify that ISC0803NLSATMA1 is sourced from the original manufacturer or authorized distributors?

All ISC0803NLSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ISC0803NLSATMA1 meets industry standards.

7.What is the process for return or replacement of ISC0803NLSATMA1?

All ISC0803NLSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with ISC0803NLSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ISC0803NLSATMA1 part is unused and in its original packaging.

Return procedure for ISC0803NLSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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