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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6635TR1

Name: IRF6635TR1
Brand: Infineon Technologies
SKU: IRF6635TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6635TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6635TR1.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6635TR1 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET® MX package, optimized for synchronous buck converter high-side and low-side (SyncFET) operation in CPU core DC-DC converters. It delivers 1.3 mΩ R_DS(on) @ 10 V, 47 nC total gate charge, and 30 V V_DS, enabling high-frequency, high-efficiency power delivery to microprocessors.

For engineers reviewing the IRF6635TR1 datasheet, IRF6635TR1 pinout, IRF6635TR1 application, or IRF6635TR1 equivalent, key selection criteria include ultra-low on-resistance at 4.5 V gate drive (1.8 mΩ), dual-sided cooling capability, <0.7 mm profile, and compatibility with existing SO-8 PCB footprints and reflow processes.

Technical Context

This MOSFET employs HEXFET® silicon with trench-gate process and DirectFET® copper-can packaging to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_gs2 = 4.7 nC, Q_gd = 17 nC) supports fast, controlled turn-on/turn-off in hard-switched topologies.

The device features a body diode with 48 nC reverse recovery charge (Q_rr) and 20–30 ns trr at 125 °C, making it suitable for synchronous rectification where diode conduction is minimized but must be robust under transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V input bus applications with margin.
R_DS(on) @ 10 V	1.3 mΩ - Enables ≤1 W conduction loss at 32 A continuous drain current.
R_DS(on) @ 4.5 V	1.8 mΩ - Ensures stable operation with 5 V logic-level gate drivers in compact VRMs.
Q_g total	47 nC - Low gate drive energy reduces driver IC loading and switching loss at >500 kHz.
Q_gd	17 nC - Controls Miller plateau duration to suppress shoot-through risk in synchronous buck stages.
Thermal resistance R_θJC	1.4 °C/W - Enables efficient heat extraction via both top (drain) and bottom (source) copper surfaces.
Package height	0.7 mm - Fits ultra-thin VRM designs and avoids interference with adjacent components or heatsinks.

Pinout & Package

IRF6635TR1 uses the DirectFET® MX outline: a copper-can, double-sided cooling package with exposed drain on top and source terminals on bottom. Dimensions are 6.3 mm × 5.05 mm × 0.7 mm (L × W × H), compatible with SO-8 land patterns.

Pin/Terminal	Circuit Role	Design Meaning
Top metal surface (Drain)	High-current drain connection	Primary thermal path; soldered directly to PCB copper pour or heatsink for dual-sided cooling.
Bottom left pad (Source)	Source terminal / return path	Electrically and thermally connected to PCB ground plane; forms low-inductance return loop.
Bottom right pad (Gate)	Control input	Isolated gate pad; requires short, low-impedance trace to driver to minimize ringing and EMI.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	1.8 mΩ - Supports efficient operation with 5 V gate drive in space-constrained VRMs.
Dual-sided cooling interface	Exposed top drain + bottom source pads - Reduces junction-to-ambient thermal resistance by up to 80% vs. SO-8.
Low package inductance	Minimized loop inductance due to planar copper-can construction - Suppresses voltage spikes during fast dI/dt switching.
High C_dv/dt immunity	Rated for high slew-rate operation - Maintains gate control integrity during aggressive switching in multiphase converters.
RoHS-compliant lead-free	Qualified for 260 °C reflow - Compatible with standard SMT assembly without special process adjustments.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to modern x86 or ARM CPUs under dynamic load transients up to 300 A/µs.

IC Role / Device Role: SyncFET in low-side position, conducting high average current with minimal conduction loss and fast body diode recovery.

Use Value: 1.3 mΩ R_DS(on) limits I²R loss to <1.3 W at 32 A, while 48 nC Q_rr ensures clean commutation during light-load discontinuous conduction mode.

Use Scenario: Compact, high-density VRM on graphics card PCB delivering up to 200 A to GPU cores with strict height constraints (<5 mm).

IC Role / Device Role: High-side FET in interleaved buck stage, leveraging low Q_gd and fast switching to reduce dead-time losses.

Use Value: 0.7 mm profile enables stacking with inductors and capacitors; 17 nC Q_gd allows precise timing control at 1 MHz+ switching frequencies.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory modules requiring tight voltage regulation (±15 mV) and rapid transient response.

IC Role / Device Role: Low-side SyncFET operating in continuous conduction mode with 4.5 V gate drive from integrated controller.

Use Value: 1.8 mΩ R_DS(on) @ 4.5 V ensures stable efficiency across full load range; 1.4 °C/W R_θJC sustains 125 °C max junction temperature under sustained 25 A loads.

Use Scenario: High-power density power stage for FPGA or ASIC-based AI accelerators with burst-mode workloads and thermal cycling demands.

IC Role / Device Role: Primary switching element in 48 V–12 V intermediate bus converter, handling peak currents >150 A per phase.

Use Value: Dual-sided cooling maintains junction temperature <110 °C during 100 ms bursts; low Q_g/Q_gd ratio minimizes driver power and gate drive loop EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6622TRPbF	Higher R_DS(on) (2.0 mΩ @ 10 V), same package and gate charge profile	Suitable for lower-current VRMs where thermal margin is less constrained	Select when cost sensitivity outweighs marginal efficiency gain of IRF6635TR1
SiR626DP-T1-GE3	Lower Q_g (39 nC), slightly higher R_DS(on) (1.5 mΩ @ 10 V), TrenchFET® Gen IV	Better suited for very high-frequency (>1.2 MHz) designs where gate drive loss dominates	Prefer when optimizing for driver IC power consumption over conduction loss

Compared with IRF6622TRPbF and SiR626DP-T1-GE3, the IRF6635TR1 offers the lowest R_DS(on) in its class-critical for minimizing I²R loss in high-current CPU/GPU VRMs-while maintaining balanced Q_g/Q_gd for robust hard-switching performance and thermal management via dual-sided cooling.

Availability

IRF6635TR1 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator power stages requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for IRF6635TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and packaging innovation for high-efficiency power conversion.

The DirectFET® product line was developed to overcome thermal and inductance limitations of traditional leaded packages, targeting high-frequency, high-current DC-DC converters in computing and data center infrastructure.

FAQ

What is the maximum continuous drain current for IRF6635TR1 at 70°C ambient?

The IRF6635TR1 supports 180 A continuous drain current at case temperature (T_C) = 25°C, derating linearly to 25 A at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes dual-sided cooling and adequate thermal interface to heatsink or PCB plane.

Does IRF6635TR1 require a negative gate voltage for reliable turn-off?

No. The IRF6635TR1 has a gate threshold voltage (V_GS(th)) of 1.35–2.35 V and is fully enhanced at 4.5 V. A gate drive swing of 0 V to 10 V is sufficient; applying negative voltage is unnecessary and not recommended per datasheet absolute maximum ratings (V_GS = ±20 V).

Can IRF6635TR1 be used in avalanche-rated circuits?

Yes. The device is rated for 900 mJ single-pulse avalanche energy (E_AS) at I_AS = 25 A and starting T_J = 25°C. It is designed for unclamped inductive switching in synchronous buck topologies where body diode conduction may occur during dead time.

How does the DirectFET® MX package improve thermal performance versus SO-8?

The DirectFET® MX package reduces R_θJA by up to 80% versus SO-8 through dual-sided cooling: the top-exposed drain serves as primary thermal path to heatsink or thermal pad, while bottom source pads conduct heat into PCB copper. Measured R_θJC is 1.4 °C/W, compared to ~3.5 °C/W for typical SO-8 MOSFETs.

IRF6635TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 71 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5970 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6635TR1 FAQ

1.How can I place an order for IRF6635TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6635TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6635TR1 reliable?

The price and inventory of IRF6635TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6635TR1 is usually 5 days.

3.What payment methods are accepted for IRF6635TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6635TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6635TR1?

IRF6635TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6635TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6635TR1?

For technical support, including IRF6635TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6635TR1 requirements.

6.How does Aetrix verify that IRF6635TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6635TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6635TR1 meets industry standards.

7.What is the process for return or replacement of IRF6635TR1?

All IRF6635TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6635TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6635TR1 part is unused and in its original packaging.

Return procedure for IRF6635TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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