Infineon Technologies SPP80N04S2-04

Overview

SPP80N04S2-04 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3-1 package, rated for 40 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 3.4 mΩ maximum R_DS(on) at V_GS = 10 V. It features 175 °C operating temperature, avalanche rating (E_AS = 810 mJ), and dv/dt ruggedness (6 kV/µs), enabling use in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP80N04S2-04 datasheet, SPP80N04S2-04 pinout, SPP80N04S2-04 application, or SPP80N04S2-04 equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, robust unclamped inductive switching capability, thermal resistance (R_thJC = 0.5 K/W), and TO-220 mechanical compatibility with standard heatsink mounting.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve high current density and low conduction loss while maintaining fast switching performance. Its gate charge profile (Q_g = 170 nC max, Q_gd = 75 nC max) supports efficient hard-switching operation up to ~100 kHz in synchronous rectification and PWM motor control topologies.

The integrated body diode exhibits low forward voltage (V_SD = 1.3 V max at I_F = 80 A) and controlled reverse recovery (Q_rr = 125 nC max, t_rr = 75 ns), reducing commutation losses and EMI in bidirectional power stages such as H-bridge inverters and regenerative braking circuits.

Key Specifications

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, standard heatsink-mountable outline with drain-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1404PBF and STP80NF55-08, SPP80N04S2-04 delivers superior conduction efficiency (−15% R_DS(on)) and guaranteed avalanche ruggedness-critical for motor and converter reliability-while maintaining identical TO-220 mechanical fit and thermal interface.

Availability

SPP80N04S2-04 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server OR-ing applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for SPP80N04S2-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPP80N04S2-04 belongs to the OptiMOS™ power transistor product line, engineered for high-current, high-efficiency switching in automotive, industrial, and computing power systems where thermal robustness and avalanche safety are mandatory.

FAQ

Is SPP80N04S2-04 suitable for synchronous rectification in 48 V telecom PSUs?

Yes. With R_DS(on) = 3.4 mΩ at 10 V gate drive and low Q_rr (125 nC), it reduces conduction and switching losses in secondary-side synchronous rectifiers. Its 40 V rating provides sufficient margin over 48 V nominal bus with transient spikes, and TO-220 package enables effective heatsinking in high-power density modules.

What is the recommended gate resistor value for hard-switching at 50 kHz?

A 2.2 Ω gate resistor is validated per datasheet (td(on)/td(off) measured with RG = 2.2 Ω). For 50 kHz operation, this value balances switching speed (tr/tf ≈ 45–68 ns) and gate drive stability. Lower values increase dV/dt stress; higher values raise switching losses-adjust based on observed ringing and thermal rise in final layout.

Does SPP80N04S2-04 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +10 V gate drive and has no requirement for negative turn-off bias. Its V_GS(th) range (2.1–4.0 V) and ±20 V V_GS rating allow standard CMOS/TTL-compatible drivers. Negative bias may improve noise immunity but is unnecessary for functional operation.

Can the drain tab be directly mounted to a common heatsink without isolation?

No. The drain is internally connected to the metal tab. Mounting to a conductive heatsink without electrical isolation creates a short to the drain node. Use insulating thermal pads or mica washers with appropriate dielectric strength (>500 V) and thermal conductivity (>1 W/m·K) to maintain safety and performance.