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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP06CN10N G

Name: IPP06CN10N G
Brand: Infineon Technologies
SKU: IPP06CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP06CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP06CN10N G.pdf

Description:: MOSFET N-CH 100V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

IPP06CN10N G from Infineon Technologies

IPP06CN10N G from Infineon Technologies is a 100 V, 60 A, 10 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies. It features low gate charge (Q_g = 58 nC), fast switching (t_on = 19 ns), and robust avalanche capability (E_AS = 470 mJ at T_j = 25 °C).

For engineers reviewing the IPP06CN10N G datasheet, IPP06CN10N G pinout, IPP06CN10N G application, or IPP06CN10N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g/Q_gd ratio for ZVS compatibility, SOA limits under pulse conditions, and thermal resistance (R_thJC = 0.65 K/W) for heatsink-limited designs.

Technical Context

This MOSFET uses Infineon's OptiMOS™ 6 technology with trench-gate superjunction architecture to achieve ultra-low R_DS(on) × Q_g figure-of-merit (600 Ω·nC). Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) ensures stable turn-on with standard 5 V logic drivers while maintaining low leakage (I_DSS ≤ 1 µA at 100 V).

The integrated body diode exhibits low forward voltage (V_SD = 1.3 V at 60 A) and fast reverse recovery (t_rr = 55 ns), enabling efficient hard-switched and resonant topologies. Thermal design is supported by a low junction-to-case resistance (0.65 K/W) and JEDEC-compliant TO-220 footprint.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input bus applications with 2× safety margin
R_DS(on) max @ V_GS = 10 V	10 mΩ - Enables <1.5 W conduction loss at 60 A continuous drain current
I_D continuous	60 A - Rated for PCB-mounted operation with 25 °C case temperature and adequate copper area
Q_g	58 nC - Supports 500 kHz+ switching in LLC resonant converters with moderate gate driver strength
R_thJC	0.65 K/W - Allows 100 W power dissipation with ≤65 K temperature rise from case to junction
E_AS	470 mJ - Withstands single-pulse inductive energy without failure in hard-switched PFC stages
t_r/t_f	12 ns / 15 ns - Minimizes switching transition losses in high-frequency synchronous buck regulators

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC MS-003AC outline. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives voltage-controlled signal; requires 10 V for full enhancement; Miller plateau at ~3.5 V
Pin 2 (Drain)	High-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; critical for low-inductance layout

Key Features

Feature	Design Value
OptiMOS™ 6 trench-gate process	Reduces R_DS(on) × Q_g by 35% vs. prior generation, improving efficiency in 48 V–12 V point-of-load converters
Low Q_gd/Q_g ratio (0.22)	Enables clean voltage-dependent turn-off with minimal Miller-induced shoot-through risk in half-bridge configurations
Qualified per AEC-Q101	Validated for automotive under-hood ambient temperatures up to 175 °C junction, supporting industrial-grade reliability
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), eliminating bake requirements before reflow

Applications

Server VRM

Telecom Rectifier

Use Scenario: 48 V input to 0.8–1.8 V output conversion for CPU/GPU core rails in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switched at 500–800 kHz.

Use Value: 10 mΩ R_DS(on) reduces conduction loss by 22% vs. 12.5 mΩ alternatives, lowering thermal stress on 6-layer PCBs.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom offline PSUs with >96% efficiency target.

IC Role / Device Role / Timing Role: Low-side switch in active clamp forward topology; driven by transformer-coupled gate signal.

Use Value: Fast t_rr (55 ns) and low Q_rr minimize reverse recovery loss, contributing to 0.4% absolute efficiency gain over Si FRDs.

Industrial Motor Drive

EV Onboard Charger

Use Scenario: Half-bridge leg in 24–48 V BLDC inverter for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element; operated with 10–20 kHz PWM and dead-time control.

Use Value: Avalanche rating (470 mJ) tolerates inductive kickback during fault events without external snubbers.

Use Scenario: Primary-side switching in 3.3 kW AC/DC stage of bidirectional OBC using phase-shifted full-bridge.

IC Role / Device Role / Timing Role: High-side switch in zero-voltage switching (ZVS) bridge leg; gated with precise timing control.

Use Value: Low Q_g (58 nC) and flat Miller plateau reduce gate drive power by 30%, easing isolation transformer sizing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 9.5 mΩ @ 10 V, Q_g = 62 nC, R_thJC = 0.75 K/W	Higher thermal resistance limits power density in compact VRMs	Prefer when cost sensitivity outweighs 0.1 K/W thermal advantage
IXFH60N10P	R_DS(on) = 11.5 mΩ @ 10 V, Q_g = 52 nC, TO-247 package	Larger footprint increases layout area and parasitic inductance	Select only if higher peak current (75 A) or enhanced avalanche margin required

Compared with STP110N10F7 and IXFH60N10P, IPP06CN10N G delivers best-in-class R_DS(on) × Q_g tradeoff in TO-220 form factor, enabling higher efficiency at 600 kHz+ while maintaining board-level compatibility with legacy designs.

Availability

IPP06CN10N G is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial motor drives, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPP06CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 6 power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum recommended gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V per datasheet, but Infineon specifies 10 V as the optimal drive voltage for full R_DS(on) reduction without accelerating gate oxide degradation. Operation above 15 V increases long-term threshold voltage shift risk and is not advised for mission-critical designs.

Does IPP06CN10N G require a gate resistor for stability in hard-switched applications?

Yes - a 5–10 Ω non-inductive gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd, especially in half-bridge layouts. Values below 3 Ω increase risk of oscillation; above 22 Ω degrade switching speed and increase losses.

Can this MOSFET replace IPP055N15N in an existing 150 V design?

No - IPP06CN10N G has a 100 V V_DS rating versus 150 V for IPP055N15N. Substituting it into a 150 V bus application risks catastrophic avalanche failure during transients. Voltage derating rules require ≥20% margin, making this substitution unsafe.

Is the drain tab electrically isolated from the package mounting surface?

Yes - the PG-TO220-3 package uses an isolated tab construction where the drain metal is insulated from the outer plastic body. However, the tab itself is electrically connected to the drain pin (Pin 2); thermal interface material must be electrically insulating if mounted to a grounded heatsink.

IPP06CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

IPP06CN10N G FAQ

1.How can I place an order for IPP06CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP06CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP06CN10N G reliable?

The price and inventory of IPP06CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP06CN10N G is usually 5 days.

3.What payment methods are accepted for IPP06CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP06CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP06CN10N G?

IPP06CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP06CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP06CN10N G?

For technical support, including IPP06CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP06CN10N G requirements.

6.How does Aetrix verify that IPP06CN10N G is sourced from the original manufacturer or authorized distributors?

All IPP06CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP06CN10N G meets industry standards.

7.What is the process for return or replacement of IPP06CN10N G?

All IPP06CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPP06CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP06CN10N G part is unused and in its original packaging.

Return procedure for IPP06CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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