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Infineon Technologies IRF640NL

Part No.:
IRF640NL
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRF640NL.pdf
Description:
MOSFET N-CH 200V 18A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,544

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Product details

Overview

IRF640NL from Infineon Technologies (formerly International Rectifier) is a 200V, 18A N-channel enhancement-mode power MOSFET in TO-220AB package with 0.15Ω RDS(on) at VGS = 10V, fully avalanche-rated, and optimized for hard-switched DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRF640NL datasheet, IRF640NL pinout, IRF640NL application, or IRF640NL equivalent, key selection criteria include its 247mJ single-pulse avalanche energy, 8.1V/ns di/dt-rated body diode recovery, 175°C maximum junction temperature, and through-hole low-profile mounting capability.

Technical Context

This fifth-generation HEXFET® device uses advanced silicon processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its gate threshold voltage (2.0–4.0V) and 67nC total gate charge support standard logic-level drive with moderate speed control.

The integrated body diode exhibits 167–251ns reverse recovery time and 929–1394nC Qrr under 100A/µs di/dt, enabling reliable operation in freewheeling and synchronous rectification roles where fast, predictable diode turn-off is required.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200V - supports 150V bus designs with 33% safety margin against transients
RDS(on)0.15Ω max @ VGS=10V - delivers ≤3.0W conduction loss at 11A continuous drain current
ID @ TC=25°C18A - enables high-current switching in compact heatsinked layouts
EAS247mJ - withstands single-event inductive energy spikes without failure
dv/dt Rating8.1V/ns - ensures robustness against rapid voltage transients during commutation
TJ Range−55°C to +175°C - certified for industrial and automotive under-hood environments
Qg67nC - determines gate driver power requirement and switching transition time

Pinout & Package

IRF640NL uses the industry-standard TO-220AB through-hole package with isolated tab (drain-connected), rated for 150W dissipation at 25°C case temperature and 1.0°C/W junction-to-case thermal resistance.

Pin/TerminalCircuit RoleDesign Meaning
1 - GateControl electrodeReceives 10V logic-level drive; 67nC total charge requires ≥1A peak gate driver for <100ns switching
2 - DrainMain current outputConnected to heatsink via isolated tab; handles full load current and avalanche energy return path
3 - SourceReference nodeServes as power ground reference; internal source inductance (7.5nH) affects high-di/dt ringing
4 - Drain (Tab)Thermal & electrical connectionElectrically tied to pin 2; provides primary heat transfer path to external heatsink

Key Features

FeatureDesign Value
Fully avalanche-rated247mJ single-pulse energy rating eliminates need for external snubbers in inductive loads
Dynamic dv/dt tolerance8.1V/ns rating prevents false turn-on during high-speed voltage transitions
175°C operating junctionEnables derated operation in sealed enclosures or high-ambient industrial settings
Low RDS(on) × Qg figure-of-merit10.05Ω·nC - balances conduction efficiency and switching loss in 20–100kHz applications
Simple drive requirementsThreshold voltage range (2.0–4.0V) allows compatibility with 3.3V/5V/12V controllers without level-shifting

Applications

Switch-Mode Power Supply (SMPS)DC Motor Drive

Use Scenario: Primary-side switch in 200W offline flyback or forward converter with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into transformer primary winding.

Use Value: 200V VDSS accommodates reflected output voltage plus leakage spike; 0.15Ω RDS(on) limits conduction loss to <3W at full load.

Use Scenario: H-bridge upper/lower quadrant switch for 24–48V brushed DC motor control in industrial actuators.

IC Role / Device Role / Timing Role: Bidirectional current-handling power switch enabling direction reversal and regenerative braking.

Use Value: 18A continuous rating supports 15A motor stall current; 247mJ EAS absorbs inductive kickback during PWM dead-time transitions.

Uninterruptible Power Supply (UPS)AC Solid-State Relay Replacement

Use Scenario: Inverter stage switch in line-interactive UPS converting 360V DC bus to 230V AC output.

IC Role / Device Role / Timing Role: Hard-switched bridge leg element operating at 16–20kHz with sinusoidal PWM modulation.

Use Value: 175°C TJ rating sustains reliability under sustained overload; 8.1V/ns dv/dt immunity prevents spurious turn-on during zero-crossing transitions.

Use Scenario: Low-profile, through-hole replacement for electromechanical relays in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Isolated load switch providing zero-voltage turn-on and controlled turn-off via gate timing.

Use Value: TO-220AB form factor fits legacy relay footprints; body diode enables bidirectional AC load handling when paired with antiparallel device.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP20NM60FD600V VDSS, 0.30Ω RDS(on), 20A ID, DPAK packageHigher voltage rating but higher on-resistance and surface-mount onlySelect when 600V isolation is required and PCB space permits SMT layout
IXTH16N20L200V VDSS, 0.18Ω RDS(on), 16A ID, TO-247 packageLower current rating but superior thermal performance (0.4°C/W RθJC)Select when higher power density and forced-air cooling are available

Compared with STP20NM60FD and IXTH16N20L, IRF640NL offers the optimal balance of 200V rating, 18A current capacity, through-hole mountability, and proven avalanche ruggedness for cost-sensitive industrial power stages.

Availability

IRF640NL is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, uninterruptible power supplies, and solid-state relay replacements requiring stable component supply across multi-year production cycles.

Supply support for IRF640NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level energy efficiency.

The HEXFET® Power MOSFET product line was engineered for high-reliability industrial switching applications demanding rugged avalanche performance, predictable thermal behavior, and ease of paralleling in high-current topologies.

FAQ

What is the maximum continuous drain current for IRF640NL at 100°C case temperature?

The maximum continuous drain current is 13A at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25°C. Designers should verify junction temperature using RθJC = 1.0°C/W and ambient conditions to ensure safe operation below 175°C.

Does IRF640NL have a built-in body diode, and what are its key recovery characteristics?

Yes, IRF640NL integrates a monolithic p-n junction body diode with typical reverse recovery time of 167ns and maximum of 251ns at TJ = 25°C, IF = 11A, and di/dt = 100A/µs. Its Qrr ranges from 929nC to 1394nC, and it supports peak diode recovery dv/dt up to 8.1V/ns - critical for minimizing switching losses in freewheeling paths.

Can IRF640NL be used in parallel configurations, and what design considerations apply?

Yes, IRF640NL is explicitly designed for easy paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Key considerations include matched gate drive impedance (<2.5Ω), symmetrical PCB layout to minimize loop inductance, and individual gate resistors to damp oscillation. Thermal coupling between devices must also be managed to avoid localized hot spots.

What is the gate threshold voltage range, and how does it affect drive circuit design?

The gate threshold voltage (VGS(th)) is specified from 2.0V to 4.0V at ID = 250µA. This wide range means full enhancement requires ≥10V VGS to guarantee 0.15Ω RDS(on). Drive circuits must deliver sufficient voltage and peak current (≥1A) to charge 67nC gate capacitance quickly, especially given the device's 33nC Miller charge that dominates turn-off delay.

IRF640NL Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1160 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRF640NL FAQ

1.How can I place an order for IRF640NL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF640NL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF640NL reliable?

The price and inventory of IRF640NL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF640NL is usually 5 days.

3.What payment methods are accepted for IRF640NL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF640NL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF640NL?

IRF640NL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF640NL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF640NL?

For technical support, including IRF640NL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF640NL requirements.

6.How does Aetrix verify that IRF640NL is sourced from the original manufacturer or authorized distributors?

All IRF640NL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF640NL meets industry standards.

7.What is the process for return or replacement of IRF640NL?

All IRF640NL units undergo pre-shipment inspection (PSI). If there is an issue with IRF640NL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF640NL part is unused and in its original packaging.

Return procedure for IRF640NL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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