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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF3808SPBF MOSFET N-CH 75V 106A D2PAK Infineon Technologies	3,254	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	75 V	106A (Tc)	10V	7mOhm @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	5310 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF520NSPBF MOSFET N-CH 100V 9.7A D2PAK Infineon Technologies	2,794	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100 V	9.7A (Tc)	10V	200mOhm @ 5.7A, 10V	4V @ 250µA	25 nC @ 10 V	±20V	330 pF @ 25 V	-	3.8W (Ta), 48W (Tc)	-	-	-	Surface Mount	D2PAK
IRLZ44ZLPBF MOSFET N-CH 55V 51A TO262 Infineon Technologies	4,617	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	51A (Tc)	4.5V, 10V	13.5mOhm @ 31A, 10V	3V @ 250µA	36 nC @ 5 V	±16V	1620 pF @ 25 V	-	80W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF3709ZLPBF MOSFET N-CH 30V 87A TO262 Infineon Technologies	4,704	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	87A (Tc)	4.5V, 10V	6.3mOhm @ 21A, 10V	2.25V @ 250µA	26 nC @ 4.5 V	±20V	2130 pF @ 15 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF3709ZSPBF MOSFET N-CH 30V 87A D2PAK Infineon Technologies	7,670	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	87A (Tc)	4.5V, 10V	6.3mOhm @ 21A, 10V	2.25V @ 250µA	26 nC @ 4.5 V	±20V	2130 pF @ 15 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL5602SPBF MOSFET P-CH 20V 24A D2PAK Infineon Technologies	6,177	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	24A (Tc)	2.5V, 4.5V	42mOhm @ 12A, 4.5V	1V @ 250µA	44 nC @ 4.5 V	±8V	1460 pF @ 15 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF6215SPBF MOSFET P-CH 150V 13A D2PAK Infineon Technologies	2,175	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	P-Channel	MOSFET (Metal Oxide)	150 V	13A (Tc)	10V	290mOhm @ 6.6A, 10V	4V @ 250µA	66 nC @ 10 V	±20V	860 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF630NLPBF MOSFET N-CH 200V 9.3A TO262 Infineon Technologies	7,191	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	9.3A (Tc)	10V	300mOhm @ 5.4A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	575 pF @ 25 V	-	82W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRLIB9343PBF MOSFET P-CH 55V 14A TO220AB FP Infineon Technologies	6,925	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	55 V	14A (Tc)	4.5V, 10V	105mOhm @ 3.4A, 10V	1V @ 250µA	47 nC @ 10 V	±20V	660 pF @ 50 V	-	33W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB Full-Pak
IRL3705ZLPBF MOSFET N-CH 55V 75A TO262 Infineon Technologies	3,052	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	3V @ 250µA	60 nC @ 5 V	±16V	2880 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262

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