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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3709ZLPBF

Name: IRF3709ZLPBF
Brand: Infineon Technologies
SKU: IRF3709ZLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3709ZLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3709ZLPBF.pdf

Description:: MOSFET N-CH 30V 87A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3709ZLPBF from Infineon Technologies is a 30V, 87A N-channel HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 5.0 mΩ R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and fully characterized avalanche capability (E_AS = 250 mJ), enabling efficient low-voltage, high-current switching in server VRMs and notebook DC/DC stages.

For engineers reviewing the IRF3709ZLPBF datasheet, IRF3709ZLPBF pinout, IRF3709ZLPBF application, or IRF3709ZLPBF equivalent, key selection criteria include its 4.5V-rated R_DS(on) performance, low Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode t_rr = 16–24 ns, and thermal resistance R_θJC = 1.89 °C/W - all critical for synchronous FET operation in sub-1V, multi-phase processor supplies.

Technical Context

This MOSFET employs trench-gate HEXFET technology with optimized cell pitch and epitaxial layer design to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate charge profile (Q_gs1 = 4.4 nC, Q_gd = 6.0 nC) supports fast, controlled turn-on and reduced Miller-induced shoot-through risk in high-dV/dt node environments.

The device features a fully rated body diode with V_SD ≤ 1.0 V at I_S = 17 A and Q_rr = 6.2–9.3 nC, enabling reliable reverse recovery in synchronous rectification. Junction temperature range spans −55°C to +175°C, with linear derating from 79 W at T_C = 25°C to 350 W peak pulsed current handling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 5V and 3.3V input rails and 1.8V/1.2V/1.0V CPU core supplies.
R_DS(on) max @ V_GS = 10 V	6.3 mΩ - Enables <1.5 W conduction loss at 87 A DC, critical for thermally constrained VRM phases.
Q_g total	17 nC - Low gate drive energy reduces controller loading and enables >1 MHz switching in compact designs.
Q_gd	6.0 nC - Low Miller charge minimizes C_dv/dt turn-on susceptibility at high-frequency switching nodes.
E_AS	250 mJ - Fully characterized single-pulse avalanche rating ensures reliability during transient overloads and startup.
t_rr	16–24 ns - Fast body diode recovery limits cross-conduction losses and EMI in synchronous buck topologies.
R_θJC	1.89 °C/W - Enables direct heatsink mounting for high-power density layouts without thermal interface compromise.

Pinout & Package

IRF3709ZLPBF uses the surface-mount D2Pak (TO-263) package with exposed drain pad for optimal thermal and electrical performance. The three-terminal configuration supports high-current PCB routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to large copper tab; must be soldered to PCB thermal pad for R_θJC = 1.89 °C/W performance.
Source	Reference node for gate control and current return	Low-inductance connection essential for stable gate drive and accurate current sensing in synchronous FET position.
Gate	Control terminal for channel modulation	High-impedance input requiring <17 nC charge; layout must minimize trace inductance to suppress ringing and overshoot.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V V_GS	Enables full enhancement in 5V gate-drive systems and supports logic-level control in space-constrained VRMs.
Fully characterized avalanche voltage/current	Guarantees survivability under unclamped inductive switching events without derating or external snubbers.
Optimized Q_gd/Q_gs1 ratio	Reduces risk of spurious turn-on during high dV/dt transitions at the synchronous node, improving system robustness.
Lead-free and RoHS-compliant construction	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and reflow profile compatibility up to 260°C.

Applications

Server Voltage Regulator Modules (VRMs)

Notebook CPU Core Power Stages

Use Scenario: Multi-phase buck converter delivering 0.8–1.3 V at up to 200 A to dual-socket Xeon processors.

IC Role / Device Role / Timing Role: Synchronous FET operating at 300–600 kHz with 100 ns dead-time control; handles high-side or low-side switching depending on topology.

Use Value: 5.0 mΩ R_DS(on) and 17 nC Q_g reduce conduction and switching losses by >12% vs. legacy 8 mΩ parts, directly lowering VRM temperature rise.

Use Scenario: Compact 2–4 phase buck regulator powering Intel Core i7/i9 CPUs in ultrabooks with strict height and thermal constraints.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during high-side off-time; requires fast t_rr and low Q_rr.

Use Value: 16 ns t_rr and 6.2 nC Q_rr cut reverse recovery losses by ~30% compared to standard 30V MOSFETs, extending battery runtime.

Graphics Card GPU Power Delivery

Industrial FPGA/ASIC Core Supplies

Use Scenario: High-current, high-transient response power stage supplying 0.9–1.2 V to NVIDIA/AMD GPUs under dynamic 300 A load steps.

IC Role / Device Role / Timing Role: Low-side switch in interleaved multiphase topology; subjected to rapid dI/dt (>500 A/µs) and high junction temperature cycling.

Use Value: 175°C max T_J, 250 mJ E_AS, and 350 A pulsed current rating ensure sustained reliability during GPU boost clock transients.

Use Scenario: Programmable logic core supply in industrial PLCs and edge AI accelerators requiring long-term stability across −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Primary power switch in fixed-frequency 500 kHz buck converter with integrated PMIC feedback loop.

Use Value: Stable R_DS(on) temperature coefficient (0.021 mV/°C) and −5.5 mV/°C V_GS(th) drift enable predictable regulation margin over full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3710ZLPBF	Higher R_DS(on) (7.5 mΩ @ 10 V), same 30 V V_DS, higher Q_g (24 nC)	Lower efficiency in high-current, high-frequency VRMs; better suited for lower-switching-frequency industrial SMPS	Select when thermal margin exists but cost sensitivity outweighs efficiency gains.
STL325N3LLH6	30 V V_DS, 3.2 mΩ R_DS(on) @ 10 V, 27 nC Q_g, DFN5x6 package	Superior R_DS(on) but higher gate charge and no exposed drain pad; limited to lower-power density layouts	Prefer for space-constrained consumer designs where PCB area is more critical than thermal performance.

Compared with IRF3709ZLPBF, IRF3710ZLPBF trades efficiency for cost and ruggedness, while STL325N3LLH6 improves conduction loss at the expense of gate drive complexity and thermal management flexibility - making IRF3709ZLPBF the balanced choice for high-reliability, high-efficiency server and notebook VRMs.

Availability

IRF3709ZLPBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, GPU power delivery, and industrial FPGA core supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRF3709ZLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRF3709ZLPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for IRF3709ZLPBF at 100°C case temperature?

The maximum continuous drain current is 62 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating and assumes proper PCB copper area and heatsinking per the D2Pak footprint guidelines in the datasheet.

Does IRF3709ZLPBF support 4.5 V gate drive in production systems?

Yes - the device is fully characterized down to 4.5 V V_GS, with R_DS(on) guaranteed ≤ 7.8 mΩ at that voltage. It is widely deployed in 5 V gate-drive VRMs where logic-level compatibility and reduced driver complexity are required.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD ≤ 1.0 V at 17 A and t_rr = 16–24 ns, offering lower forward drop than most 30 V Schottkys at high current but slower recovery. It eliminates external component count and layout complexity, though discrete Schottkys may be preferred for ultra-low-noise or >1 MHz applications.

Is IRF3709ZLPBF suitable for paralleling multiple devices in a single phase?

Yes - its positive R_DS(on) temperature coefficient (0.021 mV/°C) ensures inherent current sharing stability. Successful parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared source Kelvin sensing to avoid imbalance under high dI/dt conditions.

IRF3709ZLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3709ZLPBF FAQ

1.How can I place an order for IRF3709ZLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3709ZLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3709ZLPBF reliable?

The price and inventory of IRF3709ZLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3709ZLPBF is usually 5 days.

3.What payment methods are accepted for IRF3709ZLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3709ZLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3709ZLPBF?

IRF3709ZLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3709ZLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3709ZLPBF?

For technical support, including IRF3709ZLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3709ZLPBF requirements.

6.How does Aetrix verify that IRF3709ZLPBF is sourced from the original manufacturer or authorized distributors?

All IRF3709ZLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3709ZLPBF meets industry standards.

7.What is the process for return or replacement of IRF3709ZLPBF?

All IRF3709ZLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3709ZLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3709ZLPBF part is unused and in its original packaging.

Return procedure for IRF3709ZLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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