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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3808SPBF

Name: IRF3808SPBF
Brand: Infineon Technologies
SKU: IRF3808SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3808SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3808SPBF.pdf

Description:: MOSFET N-CH 75V 106A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3808SPBF from Infineon Technologies is a 75 V, 106 A N-channel D2PAK (TO-263) HEXFET® Power MOSFET with 5.9 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 430 mJ single-pulse avalanche energy - designed for high-current DC-DC converters and industrial motor drive half-bridges.

For engineers reviewing the IRF3808SPBF datasheet, IRF3808SPBF pinout, IRF3808SPBF application, or IRF3808SPBF equivalent, key selection criteria include its 0.75°C/W junction-to-case thermal resistance, 150 nC typical gate charge, fast 140 ns rise time, and validated repetitive avalanche capability up to T_jmax.

Technical Context

This N-channel enhancement-mode MOSFET uses advanced planar stripe processing to achieve ultra-low on-resistance per die area while maintaining robust switching performance. Its dynamic dv/dt rating of 5.5 V/ns and 100 S typical transconductance support stable operation in hard-switched topologies with high di/dt stress.

The integrated body diode exhibits 93 ns typical reverse recovery time and 340 nC reverse recovery charge at I_F = 82 A, enabling efficient freewheeling in synchronous rectification and H-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Withstands 75 V drain-source blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(on)	5.9 mΩ (typ) @ V_GS = 10 V - Delivers ≤0.6 W conduction loss at 106 A continuous, critical for thermal management in high-power stages.
Q_g	150 nC (typ) - Determines gate driver current requirement; enables <1 μs turn-on with 150 mA average drive.
t_r / t_f	140 ns / 120 ns - Supports >200 kHz switching in hard-switched converters without excessive switching loss penalty.
E_AS	430 mJ - Allows unclamped inductive switching events (e.g., motor phase commutation) without failure if T_j ≤ 175°C.
R_θJC	0.75°C/W - Enables direct heatsink mounting with predictable junction temperature rise; simplifies thermal design vs. PCB-only cooling.
I_D @ T_C = 100°C	75 A - Specifies usable current derating under real-world heatsink conditions, not just ambient-limited ratings.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad for low-inductance, high-current PCB mounting and thermal conduction to heatsink or copper plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground or low-side switch node; carries full load current.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET control node; requires 10 V drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Drain terminal (D)	High-side power node; electrically connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.9 mΩ typ at 10 V drive - Reduces conduction losses by >30% vs. legacy 75 V MOSFETs in same package.
Repetitive avalanche rated	Validated up to T_jmax = 175°C - Enables reliable operation in inductive load switching without snubbers.
Fast body diode	93 ns t_rr, 340 nC Q_rr - Minimizes reverse recovery loss in synchronous buck and half-bridge freewheeling.
Lead-free and RoHS compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 - Eliminates pre-bake requirement for surface-mount assembly.

Applications

Industrial Motor Drive

DC-DC Converter Primary Switch

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 20–50 kHz PWM-driven bridge; handles peak currents ≥82 A.

Use Value: 5.9 mΩ R_DS(on) and 0.75°C/W R_θJC enable 98.5% efficiency at 1 kW output with passive heatsinking.

Use Scenario: Primary-side switch in isolated 48 V–12 V telecom DC-DC converter with synchronous rectification.

IC Role / Device Role / Timing Role: Main switching element in forward or active-clamp forward topology operating at 250 kHz.

Use Value: 140 ns rise time and 150 nC Q_g allow clean zero-voltage switching transitions with minimal gate drive loss.

Solar Microinverter DC Link

UPS Inverter Stage

Use Scenario: DC link switching in string-level solar microinverters interfacing 30–60 V PV arrays.

IC Role / Device Role / Timing Role: Unidirectional power switch in interleaved boost stage; subjected to repetitive avalanche during MPPT transients.

Use Value: 430 mJ E_AS and 82 A I_AR ensure survivability during rapid irradiance changes without snubber circuits.

Use Scenario: Output H-bridge in online double-conversion UPS delivering 1 kVA sinusoidal AC.

IC Role / Device Role / Timing Role: Low-loss switching device in 50/60 Hz fundamental-frequency inverter leg with 10 kHz PWM carrier.

Use Value: 175°C T_jmax and 75 A I_D @ 100°C support continuous 100% load operation in enclosed cabinets without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 9.5 mΩ @ 10 V; higher gate charge (180 nC); TO-220 package	Larger footprint and higher thermal resistance (1.5°C/W R_θJC) limit use in space-constrained 1 kW designs	Prefer when cost sensitivity outweighs thermal density requirements and board layout allows TO-220 mounting.
IXFH70N60X3	600 V rating; lower R_DS(on) (11.5 mΩ) but higher Q_g (225 nC); TO-247 package	Designed for high-voltage PFC and offline SMPS, not optimized for 48 V bus conduction loss	Select only if system requires >400 V blocking; otherwise over-spec'd and less efficient at 75 V operation.

Compared with STP75NF75 and IXFH70N60X3, IRF3808SPBF delivers optimal balance of low R_DS(on), manageable Q_g, and D2PAK thermal performance specifically for 48–75 V industrial power stages - avoiding both thermal derating penalties and unnecessary voltage overhead.

Availability

IRF3808SPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for IRF3808SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, renewable energy, and transportation systems - emphasizing low R_DS(on), rugged avalanche behavior, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF3808SPBF supports 75 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects practical thermal limits under heatsink-mounted conditions, not idealized ambient testing.

Does this MOSFET require a gate resistor for safe operation?

Yes - a series gate resistor (typically 2.5–10 Ω) is required to dampen ringing, control dV/dt, and limit peak gate current during switching. The datasheet specifies 2.5 Ω for switching time characterization and recommends values based on driver capability and EMI constraints.

Can IRF3808SPBF replace IRF3808LPBF in the same PCB footprint?

Yes - both share identical D2PAK (TO-263) package dimensions and pinout. The "S" suffix denotes tape-and-reel packaging; electrical and thermal specifications are identical. No layout change is needed for substitution.

Is the body diode suitable for synchronous rectification?

No - while the body diode has fast t_rr (93 ns) and low V_SD (1.3 V), its Q_rr (340 nC) and associated recovery loss make it unsuitable for high-frequency synchronous rectification. External Schottky or MOSFET-based synchronous rectifiers are recommended above 100 kHz.

IRF3808SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 82A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3808SPBF FAQ

1.How can I place an order for IRF3808SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3808SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3808SPBF reliable?

The price and inventory of IRF3808SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3808SPBF is usually 5 days.

3.What payment methods are accepted for IRF3808SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3808SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3808SPBF?

IRF3808SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3808SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3808SPBF?

For technical support, including IRF3808SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3808SPBF requirements.

6.How does Aetrix verify that IRF3808SPBF is sourced from the original manufacturer or authorized distributors?

All IRF3808SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3808SPBF meets industry standards.

7.What is the process for return or replacement of IRF3808SPBF?

All IRF3808SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3808SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3808SPBF part is unused and in its original packaging.

Return procedure for IRF3808SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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