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Infineon Technologies IRF630NLPBF
- Part No.:
- IRF630NLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRF630NLPBF.pdf
- Description:
- MOSFET N-CH 200V 9.3A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:7,191
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Product details
Overview
IRF630NLPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 9.3 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.30 Ω RDS(on) at VGS = 10 V and fully avalanche-rated operation. It serves as a main switching device in offline SMPS, motor drive half-bridges, and DC-DC converters requiring robust unclamped inductive switching capability.
For engineers reviewing the IRF630NLPBF datasheet, IRF630NLPBF pinout, IRF630NLPBF application, or IRF630NLPBF equivalent, key selection criteria include its 94 mJ single-pulse avalanche energy rating, 8.1 V/ns di/dt immunity, 35 nC total gate charge, and thermal resistance of 1.83 °C/W junction-to-case - all critical for hard-switched industrial power stages.
Technical Context
This HEXFET® fifth-generation MOSFET uses advanced silicon processing to minimize conduction loss while maintaining fast switching (tr = 14 ns, tf = 15 ns) and high dv/dt ruggedness. Its body diode exhibits 117–176 ns reverse recovery time and 542–813 nC Qrr, enabling moderate-frequency flyback and synchronous rectification use.
The device operates across –55°C to +175°C junction temperature range with gate threshold voltage between 2.0 V and 4.0 V, and is specified for stable performance under pulsed drain current up to 37 A and continuous 6.5 A at TC = 100°C - confirming suitability for thermally constrained enclosures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 200 V - supports 170 VAC mains-derived bus voltages with 15% margin |
| RDS(on) | 0.30 Ω max @ VGS = 10 V - enables ≤4.8 W conduction loss at 4 A RMS |
| ID (TC = 25°C) | 9.3 A continuous - suitable for 75 W–100 W switch-mode power supplies |
| EAS | 94 mJ single-pulse - withstands unclamped inductive turn-off in relay drivers and solenoid controls |
| Qg | 35 nC - requires ≤0.35 µC gate drive per 10 kHz switching cycle at 10 V |
| trr / Qrr | 117–176 ns / 542–813 nC - limits usable frequency to ≤100 kHz in non-synchronous topologies |
| RθJC | 1.83 °C/W - mandates heatsink ≥1.5 K/W for sustained 6.5 A operation at 100°C case |
Pinout & Package
IRF630NLPBF uses the standard TO-220AB through-hole package with isolated tab (drain-connected), rated for 300°C soldering at 1.6 mm from case for 10 seconds and 10 lbf·in mounting torque.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output | Electrically connected to metal tab; must be insulated from heatsink unless referenced to system ground |
| Gate | Control input | High-impedance MOS gate requiring <100 nA leakage handling; sensitive to ESD |
| Source | Reference node for gate drive | Serves as return path for load current and gate driver return; defines local ground reference |
Key Features
| Feature | Design Value |
|---|---|
| Fully avalanche rated | Guarantees reliable operation under unclamped inductive switching without external snubbers |
| Low RDS(on) × Qg figure-of-merit | 10.5 Ω·nC - balances conduction efficiency and gate drive power in 50–100 kHz converters |
| Fast body diode recovery | 117 ns typical trr enables use in quasi-resonant and freewheeling paths without excessive ringing |
| Lead-free (PbF) construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
| High dv/dt immunity | 8.1 V/ns rated - suppresses false turn-on in high-side configurations with fast-rising VDS |
Applications
| Offline AC-DC Adapters | Industrial Motor Drives |
|---|---|
Use Scenario: 65 W universal-input flyback converter powering IoT gateways and PLC I/O modules. IC Role / Device Role / Timing Role: Primary-side switching transistor operating at 65 kHz with DCM control. Use Value: 0.30 Ω RDS(on) reduces conduction loss by 35% vs. legacy 0.47 Ω alternatives, improving full-load efficiency to >85%. | Use Scenario: Half-bridge inverter stage driving 1/4 HP brushless DC fan motors in HVAC control panels. IC Role / Device Role / Timing Role: Low-side switch in 20 kHz PWM-controlled H-bridge with bootstrap gate drive. Use Value: 94 mJ EAS rating prevents failure during stall-induced inductive kickback events. |
| DC-DC Buck Converters | Lighting Ballasts |
Use Scenario: 12 V input, 5 V/8 A step-down regulator for embedded computing power rails. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in high-current buck stage with external Schottky catch diode. Use Value: 37 A pulsed drain current supports 2× peak load surges without derating, simplifying thermal design. | Use Scenario: Resonant half-bridge driver for 220 V HID lamp ballasts in streetlighting systems. IC Role / Device Role / Timing Role: Main switching element in phase-shifted LLC topology operating at 250 kHz fundamental frequency. Use Value: 8.1 V/ns dv/dt rating ensures immunity to parasitic turn-on during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | RDS(on) = 0.20 Ω (lower), VDSS = 200 V, Qg = 32 nC, TO-220 | Better conduction efficiency but lower EAS (45 mJ) limits inductive switching robustness | Prefer when thermal headroom exists and avalanche stress is minimal |
| IXTP12N20P | RDS(on) = 0.28 Ω, VDSS = 200 V, Qg = 24 nC, TO-220 | Lower gate charge improves switching efficiency but lacks full avalanche rating | Select where gate drive power is constrained and snubber circuits are acceptable |
Compared with STP20NM20 and IXTP12N20P, IRF630NLPBF trades slightly higher RDS(on) for guaranteed avalanche ruggedness and proven field reliability in unclamped inductive loads - making it preferred for cost-sensitive industrial motor and relay drivers where failure modes must be eliminated.
Availability
IRF630NLPBF is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, DC-DC buck converters, and lighting ballasts requiring stable component supply and long-term manufacturing continuity.
Supply support for IRF630NLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-reliability switching in industrial power conversion, motor control, and lighting applications where ruggedness and thermal stability are critical.
FAQ
Is IRF630NLPBF pin-compatible with IRF630NPbF?
Yes - both share identical TO-220AB mechanical footprint and terminal assignment (Drain=Tab, Gate=lead1, Source=lead2). The "L" suffix denotes lead-free compliance and does not alter pinout, electrical specs, or thermal characteristics. No PCB redesign is required for substitution.
What is the maximum safe operating temperature for continuous operation?
The absolute maximum junction temperature is +175°C, but continuous operation should be limited to ≤150°C junction to ensure 10-year reliability. At TC = 100°C, the device delivers 6.5 A continuous drain current - this defines the practical thermal ceiling for sustained use with standard heatsinking.
Can IRF630NLPBF be used in synchronous rectification?
No - its body diode recovery time (117–176 ns) and Qrr (542–813 nC) are too high for efficient synchronous rectification above 50 kHz. It is intended for hard-switched primary-side or low-frequency freewheeling roles, not high-frequency secondary-side rectification.
Does IRF630NLPBF require a gate resistor for stability?
Yes - a 10–22 Ω series gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 25 pF) and PCB inductance. Without it, overshoot exceeding ±20 V gate rating may occur during fast switching, risking gate oxide damage or spurious turn-on.
IRF630NLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 575 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 82W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRF630NLPBF FAQ
1.How can I place an order for IRF630NLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF630NLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF630NLPBF reliable?
The price and inventory of IRF630NLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF630NLPBF is usually 5 days.
3.What payment methods are accepted for IRF630NLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF630NLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF630NLPBF?
IRF630NLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF630NLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF630NLPBF?
For technical support, including IRF630NLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF630NLPBF requirements.
6.How does Aetrix verify that IRF630NLPBF is sourced from the original manufacturer or authorized distributors?
All IRF630NLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF630NLPBF meets industry standards.
7.What is the process for return or replacement of IRF630NLPBF?
All IRF630NLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF630NLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF630NLPBF part is unused and in its original packaging.
Return procedure for IRF630NLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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