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Infineon Technologies IRLIB9343PBF
- Part No.:
- IRLIB9343PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IRLIB9343PBF.pdf
- Description:
- MOSFET P-CH 55V 14A TO220AB FP
- Quantity:
- Payment:
- Shipping:
Inventory:6,925
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Product details
Overview
IRLIB9343PBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-220 Full-Pak package, rated for -55 V VDS, 93 mΩ RDS(on) @ VGS = -10 V, 31 nC Qg, and 175 °C TJmax. It serves as a high-efficiency synchronous rectifier or output switch in Class-D audio amplifier half-bridge stages.
For engineers reviewing the IRLIB9343PBF datasheet, IRLIB9343PBF pinout, IRLIB9343PBF application, or IRLIB9343PBF equivalent, key selection criteria include low gate charge for THD reduction, optimized body diode recovery (Qrr = 120–180 nC) to suppress EMI, rugged 175 °C junction operation, and repetitive avalanche rating (EAR up to 190 mJ).
Technical Context
This MOSFET employs Infineon's advanced P-channel process with tailored gate oxide and epitaxial structure to minimize RDS(on) while controlling Qg (31 nC typ.) and Qgd (8.5 nC typ.). Its low Coss (160 pF typ.) and Crss (72 pF typ.) at VDS = -50 V support fast, low-loss switching in high-frequency Class-D topologies.
The device integrates a robust body diode with trr = 57–86 ns and Qrr = 120–180 nC, enabling clean reverse recovery in bridge-leg commutation. Repetitive avalanche capability (IAR = -10 A, EAR = 190 mJ) and 3.84 °C/W RθJC ensure thermal resilience under transient overloads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -55 V - Withstands full rail-to-rail voltage swing in ±28 V Class-D amplifier supplies without breakdown. |
| RDS(on) @ VGS = -10 V | 93 mΩ typ. - Enables ≤1.5 W conduction loss at -14 A DC current, critical for thermal management in compact audio modules. |
| Qg | 31 nC typ. - Reduces gate drive power and switching transition time, directly lowering THD in audio band (<20 kHz). |
| Qrr | 120–180 nC - Minimizes diode-induced voltage spikes and EMI during dead-time commutation in half-bridge configurations. |
| TJmax | 175 °C - Supports sustained operation in sealed enclosures or high-ambient environments (e.g., automotive infotainment amplifiers). |
| RθJC | 3.84 °C/W - Allows direct heatsink mounting with predictable junction temperature rise under 33 W continuous dissipation. |
| trr | 57–86 ns - Ensures rapid body-diode turn-off, preventing shoot-through and cross-conduction in synchronous Class-D output stages. |
Pinout & Package
IRLIB9343PBF uses the TO-220 Full-Pak package: insulated backside, through-hole mounting, metal tab electrically connected to the Drain terminal. The package provides low thermal resistance (RθJC = 3.84 °C/W) and mechanical robustness for industrial audio power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives negative gate drive (VGS ≤ -4.5 V) to fully enhance channel; low Qg enables fast edge rates with minimal driver stress. |
| D (Drain) | High-side power node | Connected to positive rail in high-side switch configuration; metal tab is Drain-must be isolated from heatsink unless referenced to rail. |
| S (Source) | Power return / reference | Common node for load current return and gate drive reference; ties to half-bridge midpoint in Class-D output stage. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for Class-D audio | Qg, Qrr, and Coss tuned to reduce THD and EMI in 200–500 kHz PWM switching, not generic power switching. |
| Low RDS(on) per silicon area | 93 mΩ @ -10 V enables <1.5 W conduction loss at full rated current, reducing heatsink size by ≥30% vs. legacy P-ch MOSFETs. |
| Repetitive avalanche rated | 190 mJ single-pulse EAS and validated repetitive avalanche operation allow safe handling of inductive kickback without external snubbers. |
| 175 °C junction rating | Extends usable lifetime in thermally constrained enclosures (e.g., active speaker cabinets) where ambient exceeds 85 °C. |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020D for moisture sensitivity (N/A for TO-220), eliminating post-reflow baking requirements in manufacturing. |
Applications
| Class-D Audio Amplifier Output Stage | Active Speaker Power Module |
|---|---|
|
Use Scenario: Half-bridge output stage in 50–200 W stereo amplifier driving 4–8 Ω speakers. IC Role / Device Role / Timing Role: High-side P-channel switch in complementary pair; handles rail voltage switching with precise dead-time control. Use Value: Low Qrr (120–180 nC) prevents voltage overshoot during body-diode commutation, reducing audible distortion and EMI filter cost. |
Use Scenario: Integrated power stage in compact powered studio monitors with sealed aluminum enclosures. IC Role / Device Role / Timing Role: Synchronous rectifier in DC-DC converter feeding Class-D modulator ICs; operates continuously at elevated ambient. Use Value: 175 °C TJmax and 3.84 °C/W RθJC enable stable 100% duty-cycle operation without thermal derating in 70 °C ambient. |
| Automotive Infotainment Amplifier | Professional Audio Rack Amplifier |
|
Use Scenario: 4-channel amplifier module in vehicle head unit with wide input voltage range (9–16 V) and load dump immunity. IC Role / Device Role / Timing Role: Output switch subjected to unclamped inductive transients during battery disconnect events. Use Value: Repetitive avalanche rating (EAR = 190 mJ) absorbs energy from load dump surges without failure, eliminating need for TVS clamping on each channel. |
Use Scenario: High-reliability 1 kW multi-channel amplifier for live sound reinforcement with forced-air cooling. IC Role / Device Role / Timing Role: Primary output device in paralleled configuration for current sharing and redundancy. Use Value: Tight RDS(on) distribution (93–105 mΩ) and matched gate charge ensure balanced current division across parallel devices, minimizing thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel Class-D audio amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPbF | RDS(on) = 200 mΩ @ -10 V; Qg = 54 nC; no specified Qrr or avalanche rating. | Lacks Class-D-optimized body diode; higher conduction and switching losses increase THD and heatsink demand. | Use only in non-critical, low-frequency (<100 kHz) linear or quasi-resonant designs where EMI and THD are secondary. |
| IPB180P04P4L-02 | RDS(on) = 1.8 mΩ @ -4.5 V; SO-8 package; max VDS = -40 V; not rated for repetitive avalanche. | Lower voltage rating limits use to ≤±20 V rails; surface-mount package unsuitable for >50 W discrete heatsinking. | Select only for space-constrained, low-voltage (<36 V) portable audio systems where peak power ≤25 W and avalanche stress is absent. |
Compared with IRF9540NPbF and IPB180P04P4L-02, IRLIB9343PBF uniquely balances -55 V rating, 93 mΩ RDS(on), low Qrr, and validated repetitive avalanche-making it the only drop-in solution for industrial and automotive Class-D amplifiers requiring simultaneous efficiency, ruggedness, and EMI compliance.
Availability
IRLIB9343PBF is available at Aetrix Electronics and suitable for Class-D audio amplifier output stages, active speaker power modules, automotive infotainment systems, and professional audio rack amplifiers requiring stable component supply across multi-year production cycles.
Supply support for IRLIB9343PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in audio, motor control, and industrial power conversion-emphasizing low-loss operation and rugged transient handling.
FAQ
Is IRLIB9343PBF suitable for synchronous rectification in DC-DC converters?
Yes-its 93 mΩ RDS(on) @ -10 V, low Qg (31 nC), and 175 °C TJmax make it effective in high-side synchronous rectification for buck-derived converters operating up to 500 kHz. However, its P-channel topology requires negative gate drive, so gate driver selection must accommodate that polarity and timing.
What is the maximum continuous drain current at 100°C case temperature?
The datasheet specifies ID @ TC = 100°C as -10 A at VGS = -10 V. This value accounts for thermal derating from the 25°C rating (-14 A) using the linear derating factor of 0.26 W/°C and RθJC = 3.84 °C/W, ensuring safe operation within the SOA limit at elevated temperatures.
Does IRLIB9343PBF require a gate resistor for Class-D switching?
Yes-a series gate resistor (typically 2.5–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 72 pF) and PCB inductance. The datasheet's switching time test circuit (Fig. 18a) uses RG = 2.5 Ω, yielding td(off) = 21 ns and tf = 9.5 ns-values validated for stable Class-D operation.
Can IRLIB9343PBF replace N-channel MOSFETs in half-bridge configurations?
No-it is a P-channel device intended for high-side switching where gate drive simplicity matters. Replacing an N-channel high-side switch would require level-shifting circuitry, defeating the purpose. It is designed to complement N-channel low-side switches (e.g., IRF3205) in asymmetric half-bridges, not substitute them.
IRLIB9343PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 660 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 33W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB Full-Pak
IRLIB9343PBF FAQ
1.How can I place an order for IRLIB9343PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLIB9343PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLIB9343PBF reliable?
The price and inventory of IRLIB9343PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLIB9343PBF is usually 5 days.
3.What payment methods are accepted for IRLIB9343PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLIB9343PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLIB9343PBF?
IRLIB9343PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLIB9343PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLIB9343PBF?
For technical support, including IRLIB9343PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLIB9343PBF requirements.
6.How does Aetrix verify that IRLIB9343PBF is sourced from the original manufacturer or authorized distributors?
All IRLIB9343PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLIB9343PBF meets industry standards.
7.What is the process for return or replacement of IRLIB9343PBF?
All IRLIB9343PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLIB9343PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLIB9343PBF part is unused and in its original packaging.
Return procedure for IRLIB9343PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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