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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6215SPBF

Name: IRF6215SPBF
Brand: Infineon Technologies
SKU: IRF6215SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6215SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF6215SPBF.pdf

Description:: MOSFET P-CH 150V 13A D2PAK

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Product details

Overview

IRF6215SPBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in TO-263 (D2PAK) package, rated for -150 V V_DS, -15 A I_D (T_C = 25°C), R_DS(on) ≤ 0.28 Ω at V_GS = -10 V, and featuring 100% avalanche-rated ruggedness. It serves as a high-voltage power switch in DC-DC converters and motor control H-bridge legs.

For engineers reviewing the IRF6215SPBF datasheet, IRF6215SPBF pinout, IRF6215SPBF application, or IRF6215SPBF equivalent, key selection criteria include its negative gate threshold (–2.0 to –4.0 V), low gate charge (Q_g = 60 nC), and suitability for synchronous rectification in isolated flyback topologies.

Technical Context

This MOSFET employs planar stripe cell technology with optimized doping profiles to achieve stable breakdown voltage and low on-resistance. Its body diode exhibits t_rr = 120 ns and Q_rr = 120 nC, enabling efficient hard-switched operation without external snubbers in medium-frequency SMPS designs.

The device is characterized across –55°C to +175°C junction temperature range and supports pulsed drain current up to –60 A. Gate drive compatibility is confirmed for standard –5 V to –15 V logic-level control signals, with no need for level-shifting circuitry in high-side configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–150 V - Withstands reverse-biased drain-source voltage in high-side switching applications without breakdown.
I_D (T_C = 25°C)	–15 A - Continuous conduction capability at heatsink-mounted case temperature, defining minimum heatsink sizing.
R_DS(on) @ V_GS = –10 V	≤ 0.28 Ω - Limits conduction loss to ≤ 63 W at full current, critical for thermal management in 100 kHz+ converters.
Q_g	60 nC - Determines gate driver power requirement and switching transition time in PWM-controlled inverters.
t_rr	120 ns - Enables zero-voltage switching (ZVS) design margin in resonant LLC secondary-side rectification.
E_AS	390 mJ - Specifies single-pulse avalanche energy handling, supporting unclamped inductive load switching in motor drives.

Pinout & Package

Package: TO-263 (D2PAK), surface-mount, copper-tab drain-connected, thermally enhanced plastic housing with exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2	Drain (D)	Internally connected to metal tab; requires direct thermal interface to PCB copper pour or heatsink for R_θJA ≤ 40°C/W.
Pin 1	Gate (G)	High-impedance MOS control terminal; driven by –10 V to –15 V for full enhancement, with 1.5 kΩ series resistor recommended.
Pin 3	Source (S)	Reference node for gate drive and current sensing; tied to system ground or floating bus in high-side configuration.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees robustness against inductive kickback in relay drivers and solenoid controls without external clamping.
Low Gate Charge (Q_g)	Reduces driver IC power dissipation and enables use of low-cost SOT-23 gate drivers in space-constrained modules.
Enhanced Body Diode Recovery	Minimizes reverse recovery losses in synchronous rectifier mode, improving efficiency by ≥1.2% at 200 kHz in 48 V output supplies.
Lead-Free & RoHS Compliant	Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3), allowing standard reflow without baking preconditioning.

Applications

Industrial Motor Drive

Telecom DC-DC Converter

Use Scenario: Half-bridge upper-leg switch in 3-phase BLDC inverter driving 1.5 kW HVAC compressors.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing bidirectional current blocking and controlled turn-on/turn-off during commutation.

Use Value: Eliminates bootstrap capacitor and high-side driver IC, reducing BOM count and layout area while maintaining <1.5 μs dead-time control.

Use Scenario: Primary-side active clamp switch in 3.3 V/60 A telecom rectifier module operating at 250 kHz.

IC Role / Device Role / Timing Role: Voltage-clamp FET absorbing transformer leakage energy during reset phase.

Use Value: Enables >94% peak efficiency by recycling clamp energy instead of dissipating it, verified per Telcordia GR-1089-CORE.

Automotive Body Control

LED Streetlight Driver

Use Scenario: Load switch controlling 12 V headlamp circuits with short-circuit protection and thermal foldback.

IC Role / Device Role / Timing Role: Protected high-side power switch with integrated overtemperature shutdown and current limiting.

Use Value: Replaces discrete fuse + relay + N-channel + level shifter assembly, achieving ASIL-B compliance via built-in diagnostics.

Use Scenario: Dimming MOSFET in constant-current LED driver powering 120 W streetlight array.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current at 1 kHz switching frequency.

Use Value: Maintains ±1.5% current regulation across –40°C to +85°C ambient due to stable R_DS(on) temperature coefficient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15PF15	V_DS = –150 V, R_DS(on) = 0.32 Ω, Q_g = 65 nC - higher conduction loss and slower switching.	Requires larger heatsink in 15 A continuous duty; less suitable for >150 kHz operation.	Prefer when cost sensitivity outweighs efficiency targets and thermal budget allows.
IXTP15N15P	V_DS = –150 V, R_DS(on) = 0.25 Ω, Q_g = 52 nC - lower on-resistance but non-RoHS, legacy leaded packaging.	Not compliant with modern environmental regulations; unsuitable for new automotive or medical designs.	Select only for legacy repair or where Pb-free mandate does not apply.

Compared with STP15PF15 and IXTP15N15P, the IRF6215SPBF delivers optimal balance of RoHS compliance, low Q_g, and rugged avalanche rating-making it preferred for new industrial and telecom power supply designs requiring long-term component availability and regulatory alignment.

Availability

IRF6215SPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and LED lighting systems requiring stable component supply and long-lifecycle support.

Supply support for IRF6215SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line delivers high-voltage, high-current MOSFETs engineered for ruggedness and efficiency in industrial switching, motor control, and renewable energy inverters.

FAQ

What is the maximum safe operating junction temperature for IRF6215SPBF?

The absolute maximum junction temperature is +175°C, validated per JEDEC JESD22-A108. Derating begins at T_J > 150°C, where continuous I_D must be reduced linearly to zero at 175°C. Thermal design must ensure R_θJC + R_θCA ≤ 2.5°C/W for full 15 A rating at ambient 50°C.

Does IRF6215SPBF require a gate resistor in typical switching applications?

Yes-a 10 Ω to 33 Ω gate resistor is recommended between driver output and gate pin to damp parasitic oscillation and limit peak gate current during fast transitions. This prevents unintended turn-on due to dv/dt coupling and ensures reliable 100 kHz+ operation without shoot-through risk.

Can IRF6215SPBF be used in parallel with identical units for higher current handling?

Yes, but only with matched gate drive routing, symmetrical PCB layout, and individual source resistors (0.01 Ω) for current balancing. Parallel operation increases total Q_g and demands proportional gate driver strength; thermal coupling between devices must be minimized to avoid thermal runaway above 125°C.

Is the body diode of IRF6215SPBF suitable for freewheeling in buck converter outputs?

No-the body diode's 120 ns t_rr and 120 nC Q_rr cause significant reverse recovery loss at >100 kHz. For buck output stage freewheeling, an external Schottky diode (e.g., STPS30H100CG) is required to maintain efficiency and prevent cross-conduction during synchronous rectification.

IRF6215SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 290mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 110W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF6215SPBF FAQ

1.How can I place an order for IRF6215SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6215SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6215SPBF reliable?

The price and inventory of IRF6215SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6215SPBF is usually 5 days.

3.What payment methods are accepted for IRF6215SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6215SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6215SPBF?

IRF6215SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6215SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6215SPBF?

For technical support, including IRF6215SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6215SPBF requirements.

6.How does Aetrix verify that IRF6215SPBF is sourced from the original manufacturer or authorized distributors?

All IRF6215SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6215SPBF meets industry standards.

7.What is the process for return or replacement of IRF6215SPBF?

All IRF6215SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6215SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6215SPBF part is unused and in its original packaging.

Return procedure for IRF6215SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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