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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3709ZSPBF

Name: IRF3709ZSPBF
Brand: Infineon Technologies
SKU: IRF3709ZSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3709ZSPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3709ZSPBF.pdf

Description:: MOSFET N-CH 30V 87A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3709ZSPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, designed as a low-side synchronous rectifier switch in high-frequency DC/DC converters. It delivers 6.3 mΩ R_DS(on) at V_GS = 4.5 V, 17 nC total gate charge, and 30 V V_DS, enabling efficient operation in CPU core voltage regulation stages.

For engineers reviewing the IRF3709ZSPBF datasheet, IRF3709ZSPBF pinout, IRF3709ZSPBF application, or IRF3709ZSPBF equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, avalanche-rated ruggedness (60 mJ E_AS), body diode reverse recovery performance (Q_rr = 6.2–9.3 nC), and thermal resistance (R_θJC = 1.89 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology optimized for low R_DS(on) and controlled Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on in synchronous buck topologies. Its gate threshold voltage (1.35–2.25 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −5.5 mV/°C) support stable parallel operation under thermal stress.

The device features fully characterized unclamped inductive switching (UIS) capability up to 60 mJ at T_J = 25°C and exhibits linear SOA behavior up to 100 µs pulse width. Its output capacitance (C_oss = 450 pF) and reverse transfer capacitance (C_rss = 220 pF) are specified at V_DS = 15 V, supporting accurate loss modeling in 300 kHz–1 MHz converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overshoot margins in point-of-load regulators.
R_DS(on) max @ 4.5 V	6.3 mΩ - Enables ≤1.1 W conduction loss at 17 A DC current, critical for >90% efficiency in 12 V → 1.2 V conversion.
Q_g	17 nC - Low gate charge reduces driver power demand and enables fast switching (t_r = 41 ns, t_f = 4.7 ns) without excessive gate drive strength.
I_D @ T_C = 25°C	87 A - Continuous drain rating supports high-current phases in multi-phase VRMs with adequate heatsinking.
R_θJC	1.89 °C/W - Junction-to-case thermal resistance allows direct mounting to copper planes or heatsinks for thermal management in compact PCB layouts.
Q_rr	6.2–9.3 nC - Body diode reverse recovery charge determines shoot-through risk and loss contribution in synchronous FET position during dead-time transitions.
E_AS	60 mJ - Single-pulse avalanche energy rating ensures robustness against inductive switching transients in non-isolated DC/DC converters.

Pinout & Package

IRF3709ZSPBF uses the surface-mount D2Pak (TO-263) package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard G-D-S order (left-to-right when viewing from top with marking side up and tab facing away).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives logic-level gate drive (4.5–10 V); low input capacitance (C_iss = 2130 pF) minimizes driver loading.
Drain (D)	High-current output node	Connected to PCB copper pour via exposed pad; carries full load current and must be routed with minimal inductance.
Source (S)	Reference and return path	Serves as local ground reference for gate drive; requires low-inductance connection to power ground plane.

Key Features

Feature	Design Value
Logic-level gate drive	Specified R_DS(on) ≤ 6.3 mΩ at V_GS = 4.5 V enables direct interface with PWM controllers without level-shifting circuitry.
Low Q_gd/Q_gs1 ratio	Q_gd = 6.0 nC, Q_gs1 = 4.4 nC - Ratio of 1.36 suppresses parasitic C_dv/dt turn-on during high dV/dt node transitions.
Enhanced body diode	Q_rr = 6.2–9.3 nC and t_rr = 16–24 ns - Optimized for synchronous rectification with reduced reverse recovery loss and EMI.
Avalanche-rated	60 mJ single-pulse E_AS at T_J = 25°C - Guarantees safe operation under unclamped inductive switching conditions common in VRM fault events.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile - Supports lead-free assembly processes without derating or reliability compromise.

Applications

Server CPU Voltage Regulator

GPU Core Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to modern x86 server CPUs with dynamic load steps up to 300 A/µs.

IC Role / Device Role / Timing Role: Synchronous FET operating in low-side position with 300–600 kHz switching frequency and <100 ns dead time.

Use Value: 6.3 mΩ R_DS(on) at 4.5 V gate drive minimizes conduction loss during high-duty-cycle operation, while low Q_rr prevents shoot-through during rapid load transients.

Use Scenario: Compact, high-density VRM on graphics card PCB delivering up to 400 A to GPU die with strict thermal envelope constraints.

IC Role / Device Role / Timing Role: Low-side switch in interleaved 6+2 phase topology, thermally coupled to copper-backed heatsink via D2Pak drain pad.

Use Value: 1.89 °C/W R_θJC enables direct thermal path to heatsink, maintaining T_J < 125°C at 87 A continuous current without forced airflow.

Industrial PLC I/O Power Supply

Telecom Baseband Power Module

Use Scenario: 24 V input to 3.3/5 V isolated or non-isolated supply powering programmable logic controller digital I/O banks.

IC Role / Device Role / Timing Role: Primary switching FET in active-clamp forward or synchronous buck stage handling 5–15 A continuous loads.

Use Value: 30 V V_DS rating accommodates 24 V rail + 20% transient margin; avalanche rating ensures survival during short-circuit or overload faults.

Use Scenario: Point-of-load regulator in 48 V telecom system powering FPGA, ADC/DAC, and RF front-end ICs with tight ripple and noise requirements.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in 48 V → 12 V intermediate bus converter operating at 350 kHz.

Use Value: Low C_rss (220 pF) and controlled Q_gd reduce EMI generation during high dV/dt transitions, easing compliance with EN 55022 Class B limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3709ZPBF	R_DS(on) = 5.0 mΩ @ 4.5 V (typ), Q_g = 17 nC, same D2Pak package	Lower R_DS(on) improves conduction loss but identical gate drive and thermal specs	Select when maximum efficiency at light-to-moderate load is prioritized over cost.
STL325N3LLH6	R_DS(on) = 4.5 mΩ @ 4.5 V, Q_g = 21 nC, 30 V, PowerFLAT 5x6 package	Lower R_DS(on) but higher gate charge and different thermal interface (no exposed drain pad)	Prefer for space-constrained designs where board area is more critical than thermal performance.

Compared with IRL3709ZPBF and STL325N3LLH6, IRF3709ZSPBF offers balanced trade-offs: lower gate charge than the ST part for faster switching, and higher ruggedness (60 mJ E_AS) versus the IRL variant's 45 mJ rating-making it preferred for industrial environments with frequent transients.

Availability

IRF3709ZSPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, GPU core power delivery systems, and industrial PLC I/O power supplies requiring stable component supply across extended production lifecycles.

Supply support for IRF3709ZSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRF3709ZSPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and avalanche robustness are essential.

FAQ

Is IRF3709ZSPBF suitable for 48 V input synchronous buck converters?

No. With a 30 V V_DS rating, IRF3709ZSPBF is rated only for ≤24 V nominal input applications. Using it in a 48 V system risks catastrophic avalanche failure during transients. For 48 V inputs, select 60 V or 80 V rated MOSFETs such as IPB034N06N or SI7850DP.

What is the maximum continuous drain current at 100°C case temperature?

Per the Absolute Maximum Ratings table, IRF3709ZSPBF supports 62 A continuous drain current at T_C = 100°C with V_GS = 10 V. This value assumes proper PCB copper area for thermal dissipation and accounts for R_DS(on) increase with junction temperature.

Does IRF3709ZSPBF have integrated ESD protection on the gate?

No. The device does not include on-chip gate ESD protection diodes. External gate resistors (10–100 Ω) and TVS clamps are recommended in production designs to prevent damage from human-body-model (HBM) or charged-device-model (CDM) ESD events during handling or operation.

Can IRF3709ZSPBF be paralleled with other units for higher current capacity?

Yes-its negative V_GS(th) temperature coefficient (−5.5 mV/°C) promotes natural current sharing. However, layout symmetry (matched gate and source inductance), Kelvin-source connections, and individual gate resistors are mandatory to avoid oscillation or thermal runaway in parallel configurations.

IRF3709ZSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3709ZSPBF FAQ

1.How can I place an order for IRF3709ZSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3709ZSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3709ZSPBF reliable?

The price and inventory of IRF3709ZSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3709ZSPBF is usually 5 days.

3.What payment methods are accepted for IRF3709ZSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3709ZSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3709ZSPBF?

IRF3709ZSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3709ZSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3709ZSPBF?

For technical support, including IRF3709ZSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3709ZSPBF requirements.

6.How does Aetrix verify that IRF3709ZSPBF is sourced from the original manufacturer or authorized distributors?

All IRF3709ZSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3709ZSPBF meets industry standards.

7.What is the process for return or replacement of IRF3709ZSPBF?

All IRF3709ZSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3709ZSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3709ZSPBF part is unused and in its original packaging.

Return procedure for IRF3709ZSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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