Infineon Technologies IRL5602SPBF

Overview

IRL5602SPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, rated for -20 V V(BR)DSS, 0.042 Ω RDS(on) at VGS = -4.5 V and ID = -12 A, and -24 A continuous drain current at TC = 25°C. It features fully avalanche-rated operation, fast switching (tr = 73 ns, tf = 84 ns), and integrated body diode with trr = 58–88 ns - used in high-efficiency DC-DC load switches and reverse polarity protection circuits.

For engineers reviewing the IRL5602SPBF datasheet, IRL5602SPBF pinout, IRL5602SPBF application, or IRL5602SPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = -0.7 to -1.0 V), low RDS(on) at -4.5 V, D2Pak thermal performance (RθJC = 2.0 °C/W), and repetitive avalanche energy rating of 7.5 mJ - critical for automotive power management and industrial hot-swap designs.

Technical Context

This P-channel MOSFET operates as a high-side load switch with gate threshold enabling direct microcontroller-level control without level-shifting. Its ruggedized die construction supports single-pulse avalanche energy up to 290 mJ and repetitive avalanche stress up to 7.5 mJ under defined conditions (IAS = -14 A, L = 3.0 mH).

The device uses fifth-generation HEXFET process technology to minimize on-resistance per unit area while maintaining fast dv/dt immunity (rated -0.81 V/ns) and low gate charge (Qg = 44 nC, Qgd = 19 nC). Thermal design leverages the D2Pak's low RθJC (2.0 °C/W) and 75 W PD rating at TC = 25°C.

Key Specifications

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current, low-inductance PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel logic-level power MOSFET applications.

Compared with IRF7416PbF and SI2305DS-T1-E3, the IRL5602SPBF uniquely combines D2Pak power handling (75 W), logic-level drive, and certified avalanche capability - making it the only option among the three qualified for automotive-grade hot-swap and reverse-protection designs requiring >10 A continuous current.

Availability

IRL5602SPBF is available at Aetrix Electronics and suitable for reverse polarity protection, hot-swap controller circuits, and DC-DC load switching requiring stable component supply across automotive, industrial, and medical electronics programs.

Supply support for IRL5602SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRL5602SPBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered specifically for high-reliability, high-current switching in automotive body electronics and industrial power distribution where avalanche robustness and low-voltage gate drive are mandatory.

FAQ

Is the IRL5602SPBF RoHS-compliant and lead-free?

Yes, the "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609 standard for lead-free terminations. The device uses matte tin plating over copper leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) requirements for surface-mount assembly.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At TC = 100°C, the continuous drain current is derated to -17 A (per datasheet Fig. 9), and the SOA is limited by RDS(on) at pulse widths >10 ms. For 100 µs pulses, the device supports up to -96 A IDM, provided VDS remains ≤ -10 V and peak junction temperature stays below 175°C.

Can the IRL5602SPBF be used in parallel with identical units?

Yes - its positive RDS(on) temperature coefficient (dRDS(on)/dTJ > 0) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal plane to maintain ΔTJ < 5°C between units for stable load division.

Does the body diode support synchronous rectification in buck converters?

No - while the body diode has fast recovery (trr = 58–88 ns), it lacks the low forward voltage (VSD = -1.4 V at -12 A) and controlled Qrr needed for high-efficiency synchronous rectification. It is intended for freewheeling or protection, not active rectification duty.