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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPU135N03L G MOSFET N-CH 30V 30A TO251-3 Infineon Technologies	3,045	RFQ	Datasheet	OptiMOS™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	13.5mOhm @ 30A, 10V	2.2V @ 250µA	10 nC @ 10 V	±20V	1000 pF @ 15 V	-	31W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO251-3
IRF6218STRLPBF MOSFET P-CH 150V 27A D2PAK Infineon Technologies	6,009	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	150 V	27A (Tc)	10V	150mOhm @ 16A, 10V	5V @ 250µA	110 nC @ 10 V	±20V	2210 pF @ 25 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFSL4620PBF MOSFET N-CH 200V 24A TO262 Infineon Technologies	3,751	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	77.5mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFU4620PBF MOSFET N-CH 200V 24A IPAK Infineon Technologies	6,725	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	78mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRLSL3036PBF MOSFET N-CH 60V 195A TO262 Infineon Technologies	4,376	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	4.5V, 10V	2.4mOhm @ 165A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	11210 pF @ 50 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRLS3036-7PPBF MOSFET N-CH 60V 240A D2PAK Infineon Technologies	9,504	RFQ	Datasheet	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	60 V	240A (Tc)	4.5V, 10V	1.9mOhm @ 180A, 10V	2.5V @ 250µA	160 nC @ 4.5 V	±16V	11270 pF @ 50 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK (7-Lead)
IRFS4620PBF MOSFET N-CH 200V 24A D2PAK Infineon Technologies	4,520	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	77.5mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFS5620PBF MOSFET N-CH 200V 24A D2PAK Infineon Technologies	8,090	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	77.5mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRFR4615PBF MOSFET N-CH 150V 33A DPAK Infineon Technologies	8,887	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	150 V	33A (Tc)	10V	42mOhm @ 21A, 10V	5V @ 100µA	26 nC @ 10 V	±20V	1750 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFR4620PBF MOSFET N-CH 200V 24A D-PAK Infineon Technologies	2,169	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	78mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)

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